臺灣博碩士論文加值系統

本論文製作方式簡單、低成本且可大面積生產的連續性離子層吸附與反應法製備氧化鋅薄膜作為CIGS太陽能電池元件的緩衝層。
首先以連續性離子層吸附與反應法製備氧化鋅薄膜沉積於玻璃基板上，探討不同的沉積溫度對氧化鋅薄膜的影響。透過SEM、AFM、XRD、XPS、PL及分光光譜儀的量測，發現溫度的增加明顯改善薄膜表面的粗糙度，而穿透率能達到95%以上、晶粒尺寸變大，Zn(OH)2所造成的氧缺陷明顯的減少，隨著溫度提升到180oC時能獲得較佳的薄膜品質。
以ZnO薄膜作為CIGS太陽能電池的緩衝層，探討不同溫度製備的ZnO薄膜對CIGS元件特性的影響，發現在180oC所製備出來的ZnO薄膜能獲得較佳CIGS元件特性參數。再進一步的探討ZnO薄膜的厚度對CIGS元件特性的影響，發現在ZnO薄膜200 nm時能得到最佳的開路電壓(VOC)為0.42 V、短路電流密度(JSC)為22.68 mA/cm2、填充因子(FF)為43.37%及轉換效率為4.13%。

In the study, zinc oxide was grown by Successive Ionic Layer Adsorption And Reaction (SILAR) method and it was applied to a buffer layer for Cu(InGa)Se2 solar cell. This way was a very simple wet process and low cost and considered to be suitable for large area processing.
First, the ZnO film were deposited on glass substrates by Successive Ionic Layer Adsorption And Reaction. The ZnO film was be investigated by the various of the temperature. For this purpose scanning electron microscopy, SEM, as well as various operating modes of atomic force microscopy, AFM, were utilized. In addition, the crystallinity and the composition of the films were studied by X-ray diffraction and X-ray photoelectron spectroscopy (XPS).Optical properties of ZnO thin films were characterized by ultraviolet-visible-near infrared (UV-VIS-IR) spectrophotometer and photoluminescence (PL). It found that the surface roughness of ZnO film was be improved and a transmittance of above 95% in the visible range were obtained by the increase of temperature. The best ZnO film was be obtained as the temperature was 180oC.
CIGS solar cell have been fabricated using ZnO buffer layer. The best efficiency was obtained as the ZnO film was grown at 180oC. Further, the ZnO buffer layer thickness was investigated. The best CIGS efficiency was obtained as the thickness of the ZnO buffer layer was 200 nm. An active area efficiency of 4.13% with VOC = 0.42 V, JSC = 22.68 mA/cm2, FF = 43.37%.

摘要 i
Abstract ii
致謝 iii
目錄 iv
表目錄 vii
圖目錄 viii
第一章 緒論 1
1. 前言 1
2. 研究動機 2
2.1 CIGS薄膜太陽能電池 2
2.2 緩衝層 3
3. 緩衝層介紹 4
第二章 基本原理 7
1. 太陽能電池基本原理 7
2. 太陽光譜 9
3. 太陽能電池等效電路 11
4. 太陽能電池轉換效率 14
5. CIGS太陽能電池元件結構 16
第三章 實驗流程與量測儀器 19
3.1 SILAR法製備ZnO薄膜製作流程 19
3.2 元件製作流程 21
3.2.1 鈉玻璃基板 23
3.2.2 濺鍍Mo背電極 23
3.2.3 濺鍍CIGS吸收層 23
3.2.4 SILAR製備ZnO緩衝層 24
3.2.5濺鍍AZO透明導電層 25
3.2.6 Wet etching 26
3.2.7 濺鍍Ti/Al電極 27
3.2.8 Lift-off 27
3.2.9 效率量測 28
3.3 量測儀器 29
3.3.1 霍爾效應量測 29
3.3.2 四點探針 31
3.3.3 光激光量測系統(Photoluminescence;PL) 32
3.3.4 X光繞射分析儀(X-ray Diffractometer, XRD) 33
3.3.5 X光光電子能譜儀(XPS) 35
3.3.6 紫外光/可見光/近紅外光分光光譜儀(UV/VIS/NIR) 36
3.3.7 α-step表面輪廓儀 37
3.3.8 原子力顯微鏡(AFM) 38
3.3.9 場發射掃描式電子顯微鏡(FE-SEM) 39
3.3.10 太陽光模擬器與IV量測系統 40
第四章 ZnO緩衝層薄膜特性分析 41
4.1 SEM量測分析 41
4.2 AFM量測分析 43
4.3 XRD量測分析 46
4.4 XPS量測分析 47
4.5 PL量測分析 49
4.6 光學特性分析 51
4.7 結論 52
第五章 CIGS元件特性 53
5.1 不同溫度對CIGS元件特性的影響 54
5.2 緩衝層厚度對CIGS元件特性的影響 58
5.3 結論 64
第六章 結論與未來工作 65
參考文獻 67

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