跳到主要內容

臺灣博碩士論文加值系統

(216.73.216.181) 您好!臺灣時間:2025/12/14 21:06
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:蔡啟文
研究生(外文):Chi-Wen Tsai
論文名稱:抑制失真之主動可調式AB類功率放大器設計
論文名稱(外文):Design of a Low Distortion Class-AB Power Amplifier with Active Tuning
指導教授:翁若敏
指導教授(外文):Ro-Min Weng
學位類別:碩士
校院名稱:國立東華大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:72
中文關鍵詞:失真交互調變無線通訊主動電感AB類功率放大器
外文關鍵詞:Distortionpower amplifierClass ABActive inductorWireless LANIntermodulation
相關次數:
  • 被引用被引用:0
  • 點閱點閱:595
  • 評分評分:
  • 下載下載:148
  • 收藏至我的研究室書目清單書目收藏:0
本篇論文主要設計一個輸出端主動調整匹配之AB類可調式功率放大器,使用主動電感的迴路架構,在輸出端對匹配電路做修正動作,可以應用在2.4GHz ISM Band之頻段。以整體之工作效率以及非線性效應為衡量標準,並藉由功率控制方式以及主動電感調變方式,達到高效率操作以及低交互調變失真之目標。電路模擬設計上使用WIN 2um HBT的製程參數,操作在3.3V的直流電壓。在電路模擬中,先對於在WS9901功率放大器以及主動電感所量測到之數據,做一等效模組,由功率控制方式將功率級操作在AB類,並模擬在輸入端給予兩訊號功率分別為-5dBm時,於輸出端之三次交互調變功率為將由-28dBc降為-34dBc;而系統所能容忍最大三次交互調變訊號設定在0dBm以下時,輸入功率範圍將可增加8dBm的可使用範圍;三次交互調變抑制度上,在輸出功率為10dBm時,達到最大值33dBc。在量測上,調變之後的最大PAE,位於輸入功率3dBm處,可以達到52.6%;最大功率增益為24.38dB。
In this thesis, an active tuning power amplifier with the output active inductor matching is presented. The proposed active tuning class-AB power amplifier is based on an output match network with gyrator topology and used for 2.4GHz ISM Band applications. An active inductor is added to adjust the output matching in order to reach the purposes of integrity of the signal, to alleviate the distortion, and to improve the efficiency. The proposed power amplifier is simulated using Agilent ADS software under 2um HBT model process parameter. The circuit can be operated at supply voltage of 3.3V. The simulation model is based on the measured WS9901 data and the measured active inductor data. The simulative intermodulation power will be decreased from -14dBm to -22dBm when the input power of two-tone test is -5dBm. For the fixed IM3 power, the proposed amplifier can deliver larger input power than class-AB amplifier and increase the range of the input power by 8dBm and a maximum IM3 suppression is 33dBc in the output power of 10dBm. The amplifier can also achieve a measured maximum PAE of 52.6% when the input power of 3dBm and a measured maximum power gain of 24.38dB.
中文摘要 I
ABSTRACT III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章 緒論 1
1.1 前言 1
1.2 相關研究發展現況及研究動機 1
1.3 論文各章節提要 2
第二章 非線性效應 3
2.1 功率放大器電路架構 3
2.2 功率放大器之種類 4
2.2.1 A類放大器 5
2.2.2 B類放大器 6
2.2.3 C類放大器 8
2.2.4 D類放大器 9
2.3 非線性效應 9
2.3.1 諧波效應 9
2.3.2 增益壓縮點 10
2.3.3 交互調變效應 11
2.3.4 相鄰通道功率 14
2.3.5 線性度 15
第三章 類比調變方式以及多重存取 19
3.1 類比調變原理 19
3.1.1 振幅調變 20
3.1.2 相位以及頻率調變 20
3.2 效率改良之功率放大器 23
3.3 多重存取方式 26
第四章 電路設計與實現 30
4.1 元件模組 30
4.2 負載線效應 32
4.2.1 偏壓點 32
4.2.2 效率以及輸出功率等高線特性 34
4.3 二級功率放大器之模擬 38
4.3.1 S參數以及穩定度 39
4.3.2 非線性效應之模擬 41
4.4 主動電感 44
4.4.1 主動電感架構 44
4.4.2 主動電感之量測 47
4.5 主動可調式功率放大器 51
4.5.1 WS9901功率放大器之量測 52
4.5.2 WS9901功率放大器之直流偏壓問題 57
4.5.3 主動可調式功率放大器之模擬 60
4.5.4 主動可調式功率放大器之量測 65
第五章 結論及未來方向 69
5.1 結論 69
5.2 未來方向 69
參考文獻 71
[1]I. Hakala, D. K. Choi, L. Gharavi, N. Kajakine, J. Koskela, and R. Kaunisto, “A 2.14-GHz Chireix outphasing transmitter,” IEEE Transactions on Microwave Theory and Techniques, Vol. 53, pp. 2129-2138, June 2005.
[2]A. Davis, “Predistortion of active networks,” IEEE Transactions on Circuits and Systems, Vol. 28, pp. 1014-1018, Oct. 1981.
[3]J. Y. Li, “The Design of RF Power Amplifier Power Control for Wireless Communications,” CCL technical journal, pp. 65-69, Dec. 2003.
[4]T. C. Lin, “An Introduction to The Techniques of RF Power Amplifier Linearization,” CCL technical journal, pp. 69-73, Dec. 2001.
[5]T. H. Lee, “The Design of CMOS Radio-Frequency Integrated Circuits,” Camberidge University Press, 1998.
[6]B. Razavi, “RF Microelectronics,” Prentice Hall, 1997.
[7]S. C. Cripps, “RF Power Amplifiers for Wireless Communications,” Artech House, 1999.
[8]S. C. Cripps, “Advanced Techniques in RF Power Amplifiers Design,” Artech House, 2002.
[9]J. C. Pedro and N. B. Carvalho, “Intermodulation Distortion in Microwave and Wireless Circuits,” Artech House, 2003.
[10]I. Hakalal, L. Gharav and R. Kaunisto, “Chireix power combining with saturated class-B power amplifiers,” 2004. 34th European Microwave Conference, Vol. 1, pp. 1-4, Oct. 2004.
[11]Win 2um HBT model handbook.
[12]S. C. Cripps, ” A Theory for the Prediction of GaAs FET Load-Pull Power Contours,” IEEE MTT-S International Microwave Symposium Digest, Vol. 83, pp. 221-223, May 1983.
[13]G. Gonzales, “Microwave Transistor Amplifiers: Analysis and Design,” second edition, Prentice Hall, 1997.
[14]A. Pascht, J. Fischer and M. Berroth, “A CMOS low noise amplifier at 2.4 GHz with active inductor load,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 1-5, Sept. 2001.
[15]A. Thanachayanont and A. Payne, “VHF CMOS integrated active inductor,” IEEE Electronics Letters, Vol. 32, pp. 999-1000, May 1996.
[16]A. Thanachayanont, “CMOS transistor-only active inductor for IF/RF applications,” IEEE International Conference on ICIT, Vol. 2, pp.1209-1212, Dec. 2002.
[17]2SC1623 NPN Silicon transistor data sheet, NEC Electronics Corporation.
[18]2SA812 PNP Silicon transistor data sheet, NEC Electronics Corporation.
[19]2SC5231 NPN VHF to UHF Wide-Band Low Noise Amplifier data sheet, SANYO Electric Corporation.
[20]D. M. Pozar, “Microwave Engineering,” third edition, Wiley Interscience, 2005.
[21]WS9901 Linear Power Amplifier data sheet, Winspring Wireless Technologies.
[22]S. Xie, V. Paidi, R. Coffie, S. Keller, S. Heikman, B. Moran, A. Chini, S. P. DenBaars, U. Mishra, S. Long, and M. J. W. Rodwell, “High-linearity class B power amplifiers in GaN HEMT technology,” IEEE Microwave and Wireless Components Letters, Vol. 13, pp. 284-286, July 2003.
[23]T. Iwai, K. Kebayashi, Y. Nakasha, T. Miyashita, S. Ohara and K. Joshin, “42% high-efficiency two-stage HBT power-amplifier MMIC for W-CDMA cellular phone systems,” IEEE Transactions on Microwave Theory and Techniques, Vol. 48, pp. 2567-2572, Dec. 2000.
[24]J. G. McRory, and R. H. Johnston, “Self-bias for Class B bipolar transistors,” IEEE Electrical and Computer Engineering, Vol. 2, pp. 855-858, May 1996.
[25]C. C. Lin, “WLAN Dual Band InGaP/GaAs HBT Power Amplifier MMIC Design,” CCL technical journal, pp. 53-60, Dec. 2004.
[26]T. Zhang, W. R. Eisenstadt, and R. M. Fox, “A novel 5GHz RF power detector,” Proceedings of the 2004 International Symposium on Circuits and Systems, Vol. 1, pp. 897-900, May 2004.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
無相關期刊