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This paper presents a numerical model for deep submicron MOS devices using balance equations. For a deep submicron device, the electron temperature may be much higher than lattice temperature. We need to modify the conventional mobility model incorporating the electron temperature effects and surface scattering effects. Our model also include the DIBL (Drain Induced Barrier Lowering) effect which the threshold voltage shift is strongly effected in the short channel. Finally, comparing the balance equation model with the drift-diffusion model and experimental value, our models are helpful for the device simulation.
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