臺灣博碩士論文加值系統

隨著尺寸的微縮，當傳統的二氧化矽厚度縮到 1 到1.5 奈米， 大量的漏電流將會從介電層直接穿隧過去，因此利用高介電常數介電質來取代傳統的二氧化矽是必要的。由於高介電常數的介電質在相同等效厚度下，有較厚的物理厚度，可用來抵擋大量的漏直接穿隧電流。然而，在高介電常數中所產生的遷移率衰減與臨界電壓漂移都是主要存在的問題。在本研究當中，我們透過與使用氧化鋯作為閘極絕緣層的極N型金氧半場效電晶體之比較，探討了嵌入氧化鋯之氧化鉿高介電層金屬閘極N型金氧半場效電晶體的相關電特性。

As the conventional SiO2-based gate insulator scales down to 1.0 nm - 1.5 nm, a large direct tunneling gate leakage current impacts on device performance. Utilizing high-k dielectric materials to replace SiO2-based gate as an insulator to eliminate high leakage current is necessary due to its larger physical thickness under the same electrical thickness. However, the degradation in carrier mobility and threshold voltage instability are the important issues in using high dielectric materials. In this study, as compared with pure ZrO2 nMOSFETs, the effect of adding ZrO2 to different positions in a HfO2-based high-k gate stack nMOSFETs was investigated.

第一章 緒論
第二章 高介電常數材料及其沉積技術介紹
第三章 元件結構與量測
第四章 元件特性分析
第五章 結果與討論
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