臺灣博碩士論文加值系統

本研究首先以模擬的方式，探討漸變的折射率對抗反射層的影響，再以射頻磁控濺鍍系統製作氧化銦錫薄膜，並探討功率、厚度、事後退火與氫電漿之製程條件與參數對氧化銦錫的影響，之後再利用SiO2與銀電極完成雙層抗反射模。
模擬方面，在SiO2與Si3N4之間插入一層折射率為漸變的(SiO2)x(Si3N4)y，其結構為SiO2 / (SiO2)x(Si3N4)y / Si3N4，可減少入射光的反射，平均反射率為7.84%；另一方面再研究濺鍍功率對氧化銦錫的影響，經由霍爾量測與光譜儀量測，可得到在濺鍍功率為100瓦時有最佳之電阻率6.26*10-4Ω-cm，平均穿透率87.22%；在沉積不同厚度方面，較薄的氧化銦錫，其電阻率有稍微上升的趨勢，但平均穿透率隨著厚度上升而降低；在氧化銦錫退火方面，我們可得到在PDA350度10分鐘退火可得到最低電阻率，厚度280nm在玻璃上為3.44*10-4Ω-cm，平均穿透率為86.4%，厚度70nm在多晶矽上為3.21*10-4Ω-cm，平均反射率14.89%，接著探討氫電漿參數對氧化銦錫薄膜的影響，其中以氫電漿處理60秒，可得到最低電阻率2.82*10-4Ω-cm，證實適度的氫電漿處理，的確有改善氧化銦錫之效果。
結合SiO2完成雙層ITO /SiO2抗反射層，在650度時可得到最低反射率11.86%，相較於單層ITO在經過PDA350度處理後的14.89%，則是改善約22.43%，並與我們自行模擬的趨勢吻合，之後與Ag電極的接觸處理，經由I-V測量可得到，單層ITO最佳接觸溫度為350度5分鐘，雙層ITO /SiO2最佳接觸溫度為650度5分鐘。

In this study we use simulation to find the effect of the gradient layer, and then we focus on the fabrication of ITO which investigates the effect of parameter for ITO by Radio Frequency Magnetron Sputtering. Finally we combine with SiO2 and Ag contact to complete the double anti-reflection layer.
In the simulation we find that it can reduce the reflection of light by insert the gradient layer of (SiO2)x(Si3N4)y between SiO2 and Si3N4 and we can get 7.84% average reflectance. The other way we investigate the effect of parameter for ITO. We find the best resistivity at RF power of 100w, and the resistivity about 6.26*10-4Ω-cm. We also find the resistivity don’t change with the thickness but the average reflectance deteriorate when increase of the thickness. The post annealing was done in air and in vacuum, respectively. The effects of annealing on the structure, surface morphology, optical and electrical properties of the ITO films were studied. The results show that the increase of the annealing temperature improves the optical and electrical properties. The average reflectance and average transmittance in glass and poly-silicon substrates are 86.4% and 14.89% respectively. The resistivity of the films deposited in glass and poly-silicon is about 3.21*10-4Ω-cm . We also use hydrogen plasma to treatment our ITO films. The resistivity of the films deposited is about 3.21*10-4Ω-cm and falls down to 2.82*10-4Ω-cm as the treatment time is increased to 60s.
The average transmittance of the ITO /SiO2 deposited is about 11.86% as the annealing temperature is increased to 650oC. The temperatures of Ag contact in ITO and ITO /SiO2 are 350oC and 650oC respectively.

中文摘要 i
英文摘要 ii
誌 謝 iii
目 錄 iv
表 目 錄 viii
圖 目 錄 ix
一、 緒論 1
1.1 太陽能電池簡介 1
1.1.1 太陽光譜 1
1.1.2 太陽能電池之材料 2
1.1.3 太陽能電池之種類 3
1.2 太陽電池之發展現況與市場分析 5
1.3 透明導電膜簡介 7
1.4 研究動機 7
二、 基礎理論與文獻回顧 13
2.1 薄膜成長理論 13
2.1.1 薄膜的成長步驟 13
2.1.1 薄膜的微觀結構 14
2.2 透明導電氧化物膜之性質 15
2.2.1 透明導電氧化物膜之材料與種類 15
2.3 氧化銦錫薄膜結構與基本特性 16
2.3.1 氧化銦錫晶體結構 16
2.3.2 氧化銦錫薄膜的導電機制 17
2.3.3 氧化銦錫薄膜的光學特性 18
2.4 太陽能電池之發電原理 19
2.4.1 太陽能電池之電路模型 20
2.5 薄膜之穿透與反射理論基礎 21
2.5.1 單層薄膜之穿透與反射理論基礎 21
2.5.1 雙層薄膜之穿透與反射理論基礎 23
2.6 文獻探討 24
三、 實驗方法與步驟 33
3.1 模擬 33
3.1.1 參數 33
3.1.2 單層結構 33
3.1.3 雙層結構 33
3.1.4 三層結構 34
3.2 基板之化學清洗 34
3.2.1 玻璃基板 34
3.2.2 多晶矽晶片 34
3.3 濺鍍設備 34
3.4 透明導電薄膜兼抗反射層之沉積 35
3.4.1 沉積功率 35
3.4.2 沉積厚度 35
3.4.3 沉積後退火 35
3.4.4 事後氫電漿處理 36
3.5 雙層抗反射之研究 36
3.6 元件製作 37
3.6.1 電極之製作 37
3.7 電性量測 38
3.7.1 I-V 量測 ( Current-Voltage Measure ) 38
3.7.2 四點探針 ( Four Point Probe ) 38
3.7.3 霍爾量測 ( Hall Measurement ) 38
3.8 物性量測 40
3.8.1 紫外光-可見光光譜儀 40
3.8.2 F-E SEM (Field-Emission Scanning Electron Microscope) 40
3.8.3 GIXRD (Grazing Incident X-ray Diffraction ) 41
四、 結果與討論 48
4.1 模擬折射率為漸變的ARC探討 48
4.2 氧化銦錫之製程參數之研究 49
4.2.1 濺鍍功率對薄膜特性影響 49
4.2.2 薄膜厚度對薄膜特性影響 50
4.2.3 退火對薄膜特性影響 51
4.2.4 氫電漿對薄膜特性影響 52
4.3 雙層抗反射 53
4.4 元件製作 54
4.4.1 蝕刻時間的影響 54
4.4.2 效率量測 54
五、 結論與未來研究方向 82
5.1 結論 82
5.2 未來研究方向 84
參考文獻 85
附錄一 90

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