臺灣博碩士論文加值系統

　　離子佈植方法是物理的技術能夠在金屬表面產生一擴散漸進層，其不同於鍍層技術經常會改變原基材的尺寸或大小。其中，電漿離子佈植技術利用低溫氣體電漿做為離子源。基材經施加一固定的脈衝負偏壓，之後，電漿中的離子對目標基材轟擊，在表面可能形成數百奈米的擴散深度的處理層。其中，電漿離子佈植方法可以將氮、碳、氧等間隙元素植入金屬基材中。然而，此方法之電漿離子的種類及所植入離子的深度均受到限制。本研究中以三種碳合金鋼，即304不鏽鋼、M2高速鋼、420J2麻田散鋼、以及Ti-6Al-4V為基材。利用表面分析儀器，如：X光光電子能譜儀、歐傑電子能譜儀、及低掠角X光繞射儀，來探討離子佈植表面結構的變化。對碳合金鋼，使用50% C2H2 and 50% N2而言，由於離子的動能與大小的差異，僅有氮元素可進入基材內，而碳衍生物質則是在表面產生堆疊。舉例而言，在高的偏壓下，如：20 KV時，同時造成表面粗糙度大幅上升，但離子佈植表面的奈米硬度呈下降趨勢。氮元素能進入基材表面形成微裂縫與疊差，可能對原本緻密的結構造成破壞。對Ti-6Al-4V，使用100% N2而言，處理後的試片表面會有TiN鍵結能的發現，但由於在低掠角X光繞射分析結果並未有結晶相之TiN產生，因此推測其形成之TiN為非晶型。其效應使得處理後試片表面變平整，奈米硬度上升，但在耐磨損磨之耗微振磨耗測試方面，因處理試片深度為極表面，故觀測不出顯著之變化。

　　Ion implantation methods are physical techniques capable to create a diffused layer into a metal surface and are dissimilar to coating techniques, which usually alter the size or the dimension of the substrate. Among them, plasma ion implantation technique utilizes low-pressure gaseous plasma as the source of ionized elements. The substrate is exerted a constant and negative impulse bias; plasma ions thereafter bombard into the target substrate, which may result in a layer of several hundreds nm depth. Plasma ion implantation method is competent to insert interstitial elements such as nitrogen, carbon or oxygen, into a metal. Nevertheless, both the type of plasma ions and the ion-implanted depth are limited by applying this method. In this work, three kinds of carbon alloy, i.e. 304 stainless steel, M2 high speed steel and 420J2 martensite steel, and Ti-6Al-4V were employed. Surface analyses using X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Glancing Incidence X-ray Diffraction were utilized to explore the modified structures of the ion-implanted surface. In the case of carbon alloys using 50% C2H2 and 50% N2, only nitrogen elements could enter the substrate, detected by AES, whereas carbon-derivative species were accumulated on the surface, owing to the difference of the kinetic energy and the dimension of the ionized mass. For example, at high bias voltage such as 20 KV, surface roughness significantly increased, simultaneously nanohardness of the ion-implanted surface obviously decreased. The nitrogen elements were capable of entering the substrate surface and forming creaks and stacking faults on it, which might damage the densely packed structure. In the case of Ti-6Al-4V using 100% N2, TiN binding energy, detected by XPS, was found on the ion-implanted surface, whereas no TiN crystalline structure was sought using GIXRD. It is therefore presumable that the formation of TiN was non-crystalline. In addition, this effect was superficial that made the ion-implanted surface smooth and increased its nanohardness, whereas the abrasion resistance of the treated surface to micromotion test was unobvious.

第一章 序論
1-1 前言∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙1
1-2 電漿離子佈植∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙3
1-3 電漿離子佈植對金屬表面改質機制∙∙∙∙∙∙4

第二章 文獻回顧與研究目的
2-1 文獻回顧∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙7
2-2 文獻回顧整理∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙12
2-3 研究動機與目的∙∙∙∙∙∙∙∙∙∙∙∙∙∙13

第三章 材料與實驗方法
3-1 實驗材料∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙14
3-1-1 碳合金鋼∙∙∙∙∙∙∙∙∙∙∙∙∙∙14
3-1-2 鈦合金∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙15
3-2 實驗設備∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙16
3-3 分析儀器∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙18
3-3-1 X光光電子能譜儀∙∙∙∙∙∙∙∙∙∙18
3-3-2 歐傑電子能譜儀∙∙∙∙∙∙∙∙∙∙∙19
3-3-3 低掠角X光繞射儀∙∙∙∙∙∙∙∙∙∙19
3-3-4 奈米硬度測試機∙∙∙∙∙∙∙∙∙∙∙20
3-3-5 原子力顯微鏡∙∙∙∙∙∙∙∙∙∙∙∙21
3-3-6 微震磨耗測試機∙∙∙∙∙∙∙∙∙∙∙21
3-4 實驗流程∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙22

第四章 碳合金鋼之碳、氮電漿離子佈植
I. 304不鏽鋼
4-1 X光光電子能譜儀分析-304不鏽鋼∙∙∙∙∙∙25
4-2 歐傑電子能譜儀分析-304不鏽鋼∙∙∙∙∙∙∙27
4-3 低掠角X光繞射儀分析-304不鏽鋼∙∙∙∙∙∙30
4-4 奈米硬度測試-304不鏽鋼∙∙∙∙∙∙∙∙∙∙31
4-5 原子力顯微鏡分析-304不鏽鋼∙∙∙∙∙∙∙∙32
4-6 微振磨耗測試-304不鏽鋼∙∙∙∙∙∙∙∙∙∙33
II. M2 高速鋼
4-7 X光光電子能譜儀分析- M2 高速鋼∙∙∙∙∙∙35
4-8 歐傑電子能譜儀分析-M2 高速鋼∙∙∙∙∙∙∙37
4-9 低掠角X光繞射儀分析- M2 高速鋼∙∙∙∙∙∙39
4-10 奈米硬度測試- M2 高速鋼∙∙∙∙∙∙∙∙∙40
4-11 原子力顯微鏡分析- M2 高速鋼∙∙∙∙∙∙∙41
4-12 微振磨耗測試- M2 高速鋼∙∙∙∙∙∙∙∙∙42
III. 420J2 麻田散鋼
4-13 X光光電子能譜儀分析-420J2 麻田散鋼∙∙∙44
4-14 歐傑電子能譜儀分析-420J2 麻田散鋼∙∙∙∙46
4-15 低掠角X光繞射儀分析-420J2 麻田散鋼∙∙∙48
4-16 奈米硬度測試-420J2 麻田散鋼∙∙∙∙∙∙∙49
4-17 原子力顯微鏡分析-420J2 麻田散鋼∙∙∙∙∙51
4-18 微振磨耗測試-420J2 麻田散鋼∙∙∙∙∙∙∙52

第五章 鈦合金之氮電漿離子佈植
5-1 X光光電子能譜儀分析∙∙∙∙∙∙∙∙∙∙∙55
5-2 低掠角X光繞射儀分析∙∙∙∙∙∙∙∙∙∙∙58
5-3 奈米硬度測試∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙59
5-4 原子力顯微鏡分析∙∙∙∙∙∙∙∙∙∙∙∙∙60
5-5 微振磨耗測試∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙61

第六章 結論∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙63
附錄∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙65
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