臺灣博碩士論文加值系統

在還原氣氛下燒結，會使得陶瓷體產生半導化及絕緣電阻下降，所以都會添加Ca或Mn來抑制抵抗此情形產生，但此種添加劑在還原氣氛下燒結時會生成氧空缺(vacancy)，而使得元件之電性劣化，可靠度降低，所以通常都會藉由摻雜物來改善其上述的問題。
本文是在探討添加不同量SiO2於BCTZ粉體陶瓷在還原氣份下燒結之相結構、介電性質及顯微結構。本研究使用X-ray繞射儀分析第二相的存在和以SEM和TEM來觀察微結構的變化情形與相的成分分析。當微量0.3 mol% SiO2添加至BCTZ陶瓷粉中，試片的密度在液相燒結達到緻密的效果，提升介電性質。而SiO2添加3 mol% 以上時，在燒結後會有明顯BaTiSiO5第二相從晶粒析出被觀察到。另外，SEM-EDS 成分分析也證實析出的第二相是為Si-rich 的組成。
在以合成BaTiSiO5單一相的方式來證實，BaTiSiO5會使得絕緣電阻下降，產生半導化的情形，從燒結後的陶瓷體來分析其物理性質與介電性質，在從SEM顯微結構上去分析其結構對物理性質及介電性質的影響。

Sintering behavior in reducing the atmospheres, it will produce semiconductor and drop in the insulating resistance with ceramics. Add Calcium or Manganese, inhibit and resist this situation to produce semiconductor. The additive will produce oxygen vacancy while sintering under reducing the atmosphere. Enable the electricity degradation of the component, and the reliability is reduced. Therefore, we usually improve the question by adding some dopant.
In the article, we try to understand in reducing atmospheres the effect of SiO2 on the sintering behavior and dielectric properties of BCTZ. For example, phase structure, dielectric properties, macrostructure etc. In addition, we use which X-ray powder diffraction, SEM and TEM analyze second phase, phase compositions and macrostructure. 0.3 mol% SiO2, add it in BCTZ ceramics powder, the density of trying one frits to reach the dense result in the liquid phase, improving dielectric properties. We observed obvious second phase from grain size above 3 mol% SiO2 after Sintering behavior in reducing the atmospheres. In addition, we prove that second phase had existence Si-rich by SEM-EDS.
By creating synthetic phase, BaTiSiO5, we can get some results. BaTiSiO5 will make the insulating resistance drop, produced the semiconductor. Making use of analyzing physical and dielectric properties after sintering behavior, Effect of analyze structure in the physical and dielectric properties form SEM macrostructure.

目錄
中文摘要……………………………………………………………………I
英文摘要……………………………………………………………………II
謝誌…………………………………………………………………………IV
目錄…………………………………………………………………………V
表目錄………………………………………………………………………IX
圖目錄………………………………………………………………………X
第1章 緒論…………………………………………………………………1
1.1 前言…………………………………………………………………1
1.2 研究目的……………………………………………………………1
第2章 鈦酸鋇的相關文獻與整理…………………………………………3
2.1 電容器的功用………………………………………………………3
2.2 極化的機制…………………………………………………………3
2.3 晶粒成長………………………………………………………4
2.3.1 正常晶粒成長………………………………………4
2.3.2 異常晶粒成長………………………………………4
2.3.3 孔隙對晶粒成長之影響……………………………5
2.4 液相燒結.……………………………………………………5
2.5 鈦酸鋇的結構與基本性質………………………………………5
2.5.1 鈦酸鋇的結構………………………………………5
2.5.2 鈦酸鋇的介電性質…………………………………6
2.5.3 多晶(twins)與晶域(domain) ………………………………7
2.6 組成對鈦酸鋇微結構和介電性質的影響……………………8
2.6.1 富鈦之鈦酸鋇組成…………………………………8
2.6.2 富鋇之鈦酸鋇組成………………………………………………9
2.7 摻雜物對鈦酸鋇介電性質的影響……………………………9
2.7.1 添加鋯對介電性質的影響……………………………9
2.7.2 添加鈣對介電性質的影響……………………………10
2.8 孔隙對介電常數的影響…………………………………………10
2.9 晶粒大小對鈦酸鋇介電性質之影響……………………………10
2.10 鈦酸鋇的半導化現象及半導化機構……………………………11
第三章 實驗方法及步驟………………………………………………………25
3.1 實驗藥品與粉末的製備…………………………………………25
3.2 SiO2添加於BCTZ實驗步驟……………………………………25
3.3 單一組成相………………………………………………………26
3.3.1 BaTiO3的合成……………………………………………26
3.3.2 合成BaTiSiO5實驗步驟…………………………………26
3.4 結晶相分析………………………………………………………26
3.5 燒結密度分析……………………………………………………27
3.6 介電性質分析……………………………………………………27
3.7 SEM顯微結構分析………………………………………………28
3.7.1 能量散射光譜儀…………………………………………28
3.8 電容溫度係數……………………………………………………29
3.9 TEM顯微結構分析………………………………………………29
3.9.1 TEM試片製作……………………………………………29
3.9.2 離子減薄機減薄步驟……………………………………30
第4章 結果與討論………………………………………………………………37
4.1 BCTZ ceramic添加SiO2…………………………………………37
4.1.1 BCTZ ceramic相結構分析………………………………37
4.1.2 添加SiO2對BCTZ ceramic密度之影響…………………37
4.1.3 添加SiO2對BCTZ ceramic 微結構之響………………38
4.1.4 添加SiO2對BCTZ介電性質之影響………………………40
4.1.5 TEM顯微結構與繞射分析…………………………………42
4.1.6 電容溫度係數………………………………………………43
4.2 BaTiO3-SiO2相合成………………………………………………66
4.2.1 BaTiSiO5相結構分析……………………………………66
4.2.2 BaTiSiO5密度與顯微結構分析…………………………66
4.2.3 BaTiSiO5介電性質分析…………………………………67
第5章 結論………………………………………………………………………75
參考文獻…………………………………………………………………………77
作者簡介…………………………………………………………………………83

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