臺灣博碩士論文加值系統

這幾年隨著無線通訊的成長，為了有更高的傳輸速率，更遠的傳輸距離，或者更可靠的傳輸方式，需要一個可以整合的解決方法。而功率放大器便是其中一個重要的瓶頸。傳統上，3-5族高電子移動率電晶體，例如砷化鎵，擁有高輸出功率以及高功率附加效率。使用互補式金氧半電晶體製作功率放大器，有其一定的限制跟困難，但為了系統整合以及小尺寸，製作於互補式金氧半導體製程上的功率放大器日漸重要，也引起了越多人的研究。
在本論文中，我們設計了兩顆操作於Class E mode 的功率放大器使用的是TSMC 180nm CMOS process. 第一顆功率放大器有8-dB的增益, 40%的功率附加效益還有15dBm的飽和輸出功率在5.8GHz。 第二顆功率放大器有超過20dB的增益，50%功率附加效益還有20dBm的飽和輸出功率在2.4GHz。 第三顆電路為自我調整偏壓是功率放大器，使用的是TSMC 180nm CMOS process。 第四顆電路為使用變壓器結合的功率放大器，使用的也是TSMC 180nm CMOS process。

The growth in wireless communication has strong demands in integrated solution to have faster transmission speed, more distance, and more reliable transmission. Power amplifier is one of the bottlenecks. Traditionally, Ⅲ-Ⅴ high electron mobility transistor, ex. GaAs has the high output power and high power added efficiency. It has certain restrictions and difficulties about using complementary metal-oxide semiconductor to design the power amplifiers. For the reason of system integration and small area to cost down, the fabrication of power amplifiers using complementary metal-oxide semiconductor arises attention gradually and more and more researchers study relevant topics.
In this thesis, we design two circuits in Class E Power Amplifier operation using 180nm CMOS processes. The first power amplifier achieves 8-dB small signal gain, 40% PAE, and 15 dBm output saturation power at 5.8GHz. The second power amplifier achieves 20-dB small signal gain, 50% PAE, and 20 dBm output saturation power at 2.4GHz. The third circuit is Adaptive Bias Power Amplifier using 180nm CMOS processes. The fourth circuit is Transformer Combine Power Amplifier using 180nm CMOS processes.

口試委員會審定書 #
誌謝 i
中文摘要 ii
ABSTRACT iii
CONTENTS iv
LIST OF FIGURES vii
LIST OF TABLES xiii
Chapter 1 Introduction 1
1.1 Motivation 1
1.2 Contributions 2
1.3 Thesis Organization 2
Chapter 2 Introduction to Power Amplifiers 4
2.1 Introduction 4
2.2 Performance metrics of power amplifiers [1][2] 4
2.2.1 Linearity of Power Amplifiers 4
2.2.2 Inter-Modulation ratio (IMR) & Intercept Point 6
2.2.3 Power Amplifier Efficiency 10
2.3 Classifications of the Power Amplifiers [1] 10
2.3.1 Class-A Power Amplifier 11
2.3.2 Class-B Amplifiers 13
2.3.3 Class-AB Amplifier 15
2.3.4 Class-C Amplifier 15
2.3.5 Class-E Amplifier 16
2.3.6 Class-F Amplifier 16
Chapter 3 5.8GHz & 2GHz CMOS Class E Power Amplifier 18
3.1 Introduction 18
3.2 Class E Operation 20
3.3 Process Basis 27
3.4 Design of 5.8 GHz Class E Amplifier 28
3.5 Simulation Results & Layout 33
3.6 Measurement Results 37
3.7 Design of a 2 GHz Class E Amplifier 43
3.8 Simulation Results 49
3.9 Measurement Results 51
3.10 Summary 53
Chapter 4 A 24GHz CMOS Adaptive-Bias Power Amplifier 56
4.1 Introduction 56
4.2 Process Basics 57
4.3 Previous Work 58
4.4 Design of a 24GHz power amplifier 60
4.5 Simulation Results 86
4.6 Measurement Results 89
4.7 Summary 92
Chapter 5 A 5.8GHz Transformer Combined Power Amplifier 94
5.1 Introduction 94
5.2 Previous Work 95
5.3 Design of a 5.8GHz power amplifier 96
5.4 Simulation Results 112
5.5 Measurement Results 117
5.6 Summary 119
Chapter 6 Conclusions 122
REFERENCE 124

[1]S. C. Cripps, RF Power Amplifiers for Wireless Communications. Boston, MA: Artech House, 1999
[2]B. Razavi, RF and Microelectronics. Upper Saddle River, NJ: Prentice Hall, 1998.
[3]Guillermo Gonzalez, “Microwave Transistor Amplifier 2nd Edition”, Prentice Hall , 1996
[4]S.J. Mahon, A.C. Young, A.P. Fattorini, J.T. Harvey,”6.5 Watt, 35 GHz Balanced Power Amplifier MMIC using 6-Inch GaAs pHEMT Commercial Technology” Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC ''08. IEEE ,pp1-4,2008
[5]Weizhong Li, Longxin Peng,” A design of Ka-band GaAs PHEMT power amplifier MMIC “Antennas, Propagation and EM Theory, 2008. ISAPE 2008. 8th International Symposium on ,pp1079-1082,2008
[6]Chien-Chih Ho, Chin-Wei Kuo, Chao-Chih Hsiao, and Yi-Jen Chan, "A fully integrated 2.4 GHz class-E amplifier with a 63% PAE by 0.18 μm CMOS technologies," Solid-State Electronics., Vol. 48, Issue 1, pp. 99-102, 2003.
[7]J. Carls, F. Ellinger, U. Joerges, and M. Krcmar, Highly-efficient CMOS C-band class-F power amplifier for low supply voltages, Electron Lett (2009), 1240–1241.
[8]R. Negra and W. Bachtold "Lumped-element load-network design for class-E power amplifiers", IEEE Trans. Microw. Theory Tech., vol. 54, pp.2684 2006.
[9]A. Pham and C. G. Sodini "A 5.8 GHz, 47% efficiency, linear outphase power amplifier with fully integrated power combiner", Proc. IEEE RFIC Symp., pp.160 2006
[10]G.C. Lin and Z. M. Lin, "A 5.8GHz fully-integrated power amplifier for 802.11a WLAN system," IEEE EDSSC., pp. 1013-1016, December, 2007
[11]J. T. Sun; K. Horie, N. Itoh, T. Yoshimasu, "Fully-Integrated Novel High Efficiency Linear CMOS Power Amplifier for 5.8 GHz ETC Applications, " in Asia Pacific Microwave Conference Technical Digest., 2009, pp. 365-368.
[12]Saari, V.; Juurakko, P.; Ryynanen, J.; Halonen, K, "Integrated 2.4 GHz class-E CMOS power amplifier", IEEE Radio Frequency integrated Circuits (RFIC) Symposium, Digest of Papers., 12-14 June 2005, pp.:645-648.
[13]S.H.-L. Tu, S.S.-H. Chen, "5.25GHz CMOS cascode power amplifier for 802.11a wireless local area network," Journal of IET Microwaves, Antennas & Propagation,vol.2, Issue 6, pp. 627-634, September. 2008.
[14]T. Masuda, K. Ohhata, N. Shiramizu, S. Hanazawa, M. Kudoh, Y. Tanba, Y. Takeuchi, H. Shimamoto, T. Nagashima, and K. Washio, "Single-chip 5.8 GHz ETC transceiver IC with PLL and demodulation circuits using SiGe HBT/CMOS", IEEE ISSCC Dig. Tech. Papers, pp.96 -97 2002.
[15]Thian, M. ; Fusco, V. ; Gardner, P. ;”Power-Combining Class-E Amplifier With Finite Choke”, Circuits and Systems I: Regular Papers, IEEE Transactions on., March 2011;pp.451-457.
[16]S. A. Z. Murad, R. K. Pokharel, H. Kanaya and K. Yoshida, "A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors," Silicon Monolithic Integrated Circuits in RF Systems (SiRF)., pp. 25-28, 2010.
[17]S. Datta, "A 950-MHz fully differential class-E power amplifier in 0.18μm CMOS for wireless communications," Emerging Trends in Electronic and Photonic Devices & Systems(ELECTRO), pp.88-91, 2009
[18]D. Sira, P. Thomsen, and T. Larsen, "Output power control in class-E power amplifiers," IEEE Microwave and Wireless Components Letters., vol. 20, no. 4, pp. 232-234, Apr 2010.
[19]M. Apostolidou , M. P. van der Heijden , D. M. W. Leenaerts , J. Sonsky , A. Heringa and I. Volokhine "A 65 nm CMOS 30 dBm class-E RF power amplifier with 60% PAE and 40% PAE at 16 dB back-off", IEEE J. Solid-State Circuits, vol. 44, no. 5, pp.1372 -1379 2009.
[20]C. C. Hung, J. L. Kuo, K. Y. Lin, and H. Wang, "A 22.5-dB gain, 20.1-dBm output power K-band power amplifier in 0.18-μm CMOS," in IEEE RFIC Symp., pp. 557-560, May 2010.
[21]Y. N. Jen, J. H. Tsai, C. T. Peng, and T. W. Huang, "A 20 to 24 GHz +16.8 dBm fully integrated power amplifier using 0.18-μm CMOS process," IEEE Microwave and Wireless Component Letter, vol. 19, no. 1, pp. 42-44, Jan. 2009.
[22]J. L. Kuo, Z. M. Tsai, and H. Wang, "A 19.1-dBm fully-integrated 24-GHz power amplifier using 0.18-μm CMOS technology," in Proceeding of the European Microwave Conference, pp. 558-561. Oct. 2008.
[23]J. W. Lee and S. M. Heo, "A 27 GHz, 14 dBm CMOS power amplifier using 0.18 μm common-source MOSFETs," IEEE Microw. and Wireless Compon. Lett., vol. 18, pp. 755-757, Nov. 2008.
[24]N. C. Kuo, J. C. Kao, C. C. Kuo, and H. Wang, “K-band CMOS power amplifier with adaptive bias for enhancement in back-off efficiency,” IEEE MTT-S International Microwave Symposium Digest, Baltimore, MD, USA, Jun. 2011
[25]P. C. Huang, J. L. Kuo, Z. M. Tsai, K. Y. Lin, and H. Wang, "A 22-dBm 24-GHz power amplifier using 0.18-μm CMOS technology," in IEEE MTT-S Int. Microwave Symp. Dig., pp. 248-251, May 2010.
[26]H. Portela, V. Subramanian, and G. Boeck, “Fully integrated high efficiency K-band PA in 0.18-μm CMOS technology,” in Proc. Microwave and Optical Conference, Nov. 2009, pp. 393-396.
[27]J. O. McSpadden, I. Fan, and K. Chang, "A high conversion efficiency 5.8-GHz rectenna", IEEE Trans. Microwave Theory Tech., vol. 46, pp.2053 -2060 1998
[28]Ren, Y. J., and Chang, K. (2006). “5.8 GHz circularly polarized dual-diode rectenna and rectenna array for microwave power transmission.” IEEE Trans. Microwave Theory Tech., 54, 1495–1502.
[29]A. Komijani and A. Hajimiri, "A 24 GHz, +14.5 dBm fully-integrated power amplifier in 0.18-μm CMOS," in Proc. IEEE Custom Integr. Circuits Conf., Oct. 2004, pp. 561-564.
[30]K. Joshin, Y. Kawano, M. Fujita, T. Suzuki, M, Sato, T. Hirose, "A 24 GHz 90-nm CMOS-based power amplifier module with output power of 20 dBm," in IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, Dec. 2009.
[31]Y.-S. Jiang, J.-H. Tsai and H. Wang "A W-band medium power amplifier in 90 nm CMOS", IEEE Microw. Wireless Compon. Lett., vol. 18, pp.818 2008
[32]I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Fully-Integrated CMOS power amplifier design using distributed active transformer architecture", IEEE J. Solid-State Circuits, vol. 37, pp.371 -383 2001
[33]P. Haldi , D. Chowdhury , P. Reynaert , G. Liu and A. M. Niknejad, "A 5.8 GHz 1 V linear power amplifier using a novel on-chip transformer power combiner in standard 90 nm CMOS", IEEE J. Solid-State Circuits, vol. 43, pp.1054, 2008
[34]Chengzhou Wang, “CMOS Power Amplifiers for Wireless Communications,” PhD dissertation, University of California, San Diego, 2003
[35]Long, J.R.;” Monolithic transformers for silicon RF IC design” Solid-State Circuits, IEEE Journal of,vol.9 ,on pp.1368-1382；2002
[36]Solar, H.; Berenguer, R.; Adin, I.; Alvarado, U.; Cendoya, I.; A Fully Integrated 26.5 dBm CMOS Power Amplifier for IEEE 802.11a WLAN Standard with on-chip "power inductors,”Microwave Symposium Digest, 2006. IEEE MTT-S International,；June 2006
[37]P. Haldi, et al., “A 5.8 GHz 1V linear power amplifier using a novel on-chip transformer power combiner in 90 nm CMOS,” IEEE Journal of Solid-State Circuits, vol. 43, no. 5, pp. 1054 – 1063, May2008.
[38]J. H. Kim, Y. S. Noh, and C. S. Park, "A low quiescent current 3.3V operation linear MMIC power amplifier for 5 GHz WLAN applications," IEEE MTT-S International on Microwave Symposium Digest, pp.867 -870,June2003.
[39]To-Po Wang; Ji-Hong Ke; Cheng-Yu Chiang; “A high-Psat high-PAE fully-integrated 5.8-GHz power amplifier in 0.18-μm CMOS,” Electron Devices and Solid-State Circuits (EDSSC), pp. 1-2, Nov. 2011.
[40]C. Lu, A.-V. Pham, M. Shaw, and C. Saint, "Linearization of CMOS Broadband Power Amplifiers Through Combined Multigated Transistors and Capacitance Compensation," IEEE Trans. Microwave Theory Tech., vol. 55, no. 11, pp. 2320-2328, Nov. 2007.
[41]Lin, G.C.; Lin, Z.M.; “A 5.8 GHz Fully-Integrated Power Amplifier for 802.11a WLAN System,” in IEEE MTT-S Int. Dig., June 2010, pp. 248-251.
[42]H. Portela, V. Subramanian, and G. Boeck, “Fully integrated high efficiency K-band PA in 0.18-μm CMOS technology,” Electron Devices and Solid-State Circuits, 2007. EDSSC, 2007, pp. 1013-1016.
[43]Hwann-Kaeo Chiou and Tsung-Yu Yang;”Low-Loss and Broadband Asymmetric Broadside-Coupled Balun for Mixer Design in 0.18- um CMOS Technology,” IEEE Trans. Microwave Theory & Tech.,vol.4 on pp.835-848；2008
[44]Y. Eo and K. Lee, "A fully integrated 24-dBm CMOS power amplifier for 802.11a WLAN applications," IEEE Microwave Wireless Compon. Lett., vol. 14, no. 11, pp. 504-506, November 2004.
[45]K. Fujii and H. Morkner, "Ka-band 2W and 4W MMIC power amplifiers in 7x7mm low-cost SMT package," IEEE IMS Digest, pp. 829-832, June 2007.