[1]M. R. Krames, G. Christenson, D. Coffins, L. W. Cook, M. G. Craford, A. Edwards, R. M. Fletcher, N. Gardner, W. Goetz, W. Imler, E. Johnson, R. S. Kern, R. Khare, F. A. Kish, C. Lowery, M. J. Ludowise, R. Mann, M. Maranowski, S. Maranowski, P. S. Martin, J. O''Shea, S. Rudaz, D. Steigerwald, J. Thompson, J. J. Wierer and J. Yu, “High-Brightness AlGaInN Light-Emitting Diodes,” SPIE, vol. 2, p. 3938, 2000.
[2]J. Petroski, “Cooling High Brightness LEDs: Developments Issues, and Challenges,” Nest Generation Thermal Management Materials and Systems Conference, June 15-17, 2005.
[3]S. Paolini, “Future trends in solid state lighting,” IMAPS Advanced Technology Workshop on power LED Packaging and Assembly, Oct. 26-28, 2005, Palo, CA, USA.
[4]R. Steen, “Solid state lighting for general illumination,” IMAPS Advanced Technology Workshop on Power LED Packaging and Assembly, Oct. 26-28, 2005, Palo, CA, USA.
[5]F. Wall, “Bringing it all togetherxthe basics of building an LED module/assembly,” IMAPS Advance Technology Workshop on Power LED Packaging and Assembly, Oct. 26-28, 2005, Palo, CA, USA.
[6]F. Wall, P. Martin and G. Harbers, “High Power LED Package Requirement,” SPIE, vol. 85, p. 5187, 2004.
[7]H. Sugawara, M. Ishikawa and G. Hatakoshi, “High Efficiency InGaAlP/GaAs Visible Light Emitting Diodes,” App. Phys. Lett., vol. 58, p. 1010, 1991.
[8]H. Sugawara, M. Ishikawa and G. Hatakoshi, “High Brightness InGaAlP Green Light Emitting Diodes,” App. Phys. Lett., vol. 61, p. 1752, 1992.
[9]D. A. Vanderwater, I. H. Tan, G. E. Hofler, D. C. DeFevere and F. A. Kish, “High Brightness AlGaInP Light Emitting Diodes,” IEEE J. Sel. Top Quantum Electron., vol. 85, p. 1752, 1997.
[10]S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Mukai, “Superbright Green InGaN Single Quantum Well Structure Light Emitting Diodes,” Jpn. J. Appl. Phys., vol. 34, p. 1332, 1995.
[11]F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald and M. G. Craford, “Very High Efficiency Semiconductor Wafer Bonded Transparent Substrate (AlxGa1–x)0.5In0.5P/GaP Light Emitting Diodes,” Appl. Phys. Lett., vol. 64, p. 2839, 1994.
[12]F. A. Kish, D. A. Vanderwater, D. C. DeFevere, D. A. Steigerwald, G. E. Hofler, K. G. Park and F. M. Steranka, “High Reliable and Efficient Semiconductor Wafer Bonded AlGaInP/GaP Light Emitting Diodes,” Electron. Lett., vol. 32, p. 132, 1996.
[13]S. Yoshida, S. Misawa and S. Gonda, “Epitaxial Growth of GaN/AlN Heterostructures,” J. Vac. Sci. Technol. B., vol. 1, p. 250, 1982.
[14]A. Zukauskas, M. S. Shur and R. Gaska, “Introduction to Solid-State Lighting,” New York: Wiley and Sons Press, p. 12, 2002.
[15]M. Hao, T. Sugahara, H. Sato, Y. Morishima, Y. Naoi, L. T. Romano and S. Sakai, “Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition,” Jpn. J. Appl. Phys., vol. 37, p. 291, 1998.
[16]E. Kuokstis, C. Q. Chen, J. W. Yang, M. Shatalov, M. E. Gaevski, V. Adivarahan and M. A. Khan, “Room Temperature Optically Pumped Laser Emission from a-plane GaN with High Optical Gain Characteristics,” Appl. Phys. Lett., vol. 84, p. 2998, 2004.
[17]A. Zukauskas, M. S. Shur and R. Gaska, “Introduction to Solid-State Lighting,” Wiley and Sons Press, p. 12 , 2002.
[18]S. Nakamura and G. Fasol, “The Blue Laser Diode: GaN Based Light Emitters and Lasers,” Springer Press, p. 10, 2000.
[19]S. Nakamura and S. F. Chichibu, “Introduction to Nitride Semiconductor Blue Laser Diode and Light Emitter Diodes,” Taylor and Francis Press, p. 45, 2000.
[20]N. Narendran and Y. Gu, “Life of LED-Based White Light Sources,” IEEE/OSA J. Disp. Technol, vol. 1, p. 1, 2005.
[21]R. H. Horng, C. C. Chiang, H. Y. Hsiao, X. Zheng, D. S. Wuu and H. I. Lin, “Improved Thermal Management of GaN/Sapphire Light-Emitting Diodes Embedded in Reflective Heat Spreaders,” Appl. Phys. Let., vol. 93, p. 111907, 2008.
[22]R. H. Horng, H. Y. Hsiao, C. C. Chiang, D. S. Wuu, Y. L. Tsai and H. I. Lin, “Novel Device Design for High-PowerInGaN/Sapphire LEDs Using Copper Heat Spreader With Reflector,” IEEE J. Sel. Top Quantum Electron., vol. 15, p. 4, 2009.
[23]史光國, “半導體LED及固態照明,” 全華科技, p. 21, 2005.
[24]E. Hecht, “Optics 4th,” Wesley press, p. 117, 2002.
[25]黃調元, “半導體元件物理與製作技術,” 國立交通大學出版社, p. 41, 2003.
[26]Y. Xi and E. F. Schubert, “Junction Temperature Measurement in GaN Ultraviolet Light Emitting Diodes Using Diode forward Voltage Method,” Appl. Phys. Lett., vol. 85, p. 2163, 2004.
[27]Y. Xi, J. Q. Xi, T. Gessmann, J. M. Shah, J. K. Kim, E. F. Schubert, A. J. Fischer, M. H. Crawford, K. H. A. Bogart and A. A. Allerman, “Junction and Carrier Temperature Measurements in Deep Ultraviolet Light Emitting Diodes Using Three Different Methods,” Appl. Phys. Lett., vol. 86, p. 1907, 2005.
[28]P. Incropera and P. DeWitt, “Introduction To Heat Transfer 4th,” Wiley and Sons Press, p. 13, 2001.
[29]J. Moran and N. Shapiro, “Fundamentals of Engineering Thermodynamics 6th,” John Wiley and Sons Press, p. 110, 2004.
[30]P. Incropera, P. DeWitt, L. Bergman and S. Lavine, “Fundamentals of Heat and Mass Transfer 4th,” John Wiley and Sons Press, p. 69, 1997.
[31]Frank Kreith and M. S. Bohn, “Principles of Heat Transfer 6th,” Brooks and Cole, p. 6, 2001.
[32]Allen C. Hamilton Jr., “Acid Sulfate and Pyrophosphate Copper Plating,” Plating and Surface Finishing, p. 24, 1998.
[33]T. Thomas and R. Thomas, “Electroplating bath control for copper interconnects,” Solid State Technology, p. 47, 1998.
[34]W. C. Gau, T. C. Chang and J. C. Hu, “Copper electroplating for future ultralarge scale integration interconnection,” J. Vac. Sci. Technol. B., vol. 18, 2000.
[35]游振菖, “探討半導體金屬化製程之金屬鉭薄膜的沉積與化學添加劑對銅沉積之影響,” 私立中原大學化學工程系研究所碩士論文, 2002.[36]江鎰禎, “高功率發光二極體之散熱光杯取光設計與陣列模組構裝技術製作,” 國立中興大學材料工程學系碩士論文, 2010.[37]Y. Zhu , C. Xu, X. Da, T. Liang, J. Zhang and G. Shen, “Enhanced Output of Flip-Chip Light-Emitting Diodes with a Sidewall Reflector,” Solid-State Electronics, vol. 51, p. 674, 2007.
[38]S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin and H. Liu, “Thermally Stable Mirror Structures for Vertical-Conducting GaN/Mirror/Si Light-Emitting Diodes,” IEEE Photonics Technology Lett., vol. 19, p. 23, 2007.
[39]蕭翔允, “高散熱發光二極極體構裝設計與實做研究,” 國立中興大學材料工程學系碩士論文, 2008.[40]G. Iyer, E. Ouyang, W. Kittidacha, S. Tantideeravit and Suresh LK Spansion Inc. “Pb-free Solder: SAC105 vs SAC305 Drop-Test Reliability Data Comparison,” IEEE/CPMT International Electronics Manufacturing Technology (IEMT), vol. 32, p. 251, 2007.
[41]洪志欣, “高功率LED之前瞻性熱管理設計與構裝技術製作,” 國立中興大學材料工程學系碩士論文, 2010.
[42]G. Farkas, Q. V. V. Vader, A. Poppe and G. Bognar, “Thermal Investigation of High Power Optical Devices by Transient Testing,” IEEE Transactions on components and packaging technologies, vol. 28, p. 1, 2005.
[43]C. P. Wang and S. B. Huang, “Technology of Interface Thermal Resistance Measurement for LED Package,” Industrial Materials Magazine, p. 266, 2009.
[44]陳隆建, “發光二極體之原理與製程,” 全華科技出版社, 2006.
[45]Y. S Chen, K. H Chien, Y. M. Ferng, C. C. Wang, T. C. Hung and B. S. Pei, “Numerical simulation of a heat sink embedded with a vapor chamber and calculation of effective thermal conductivity of a vapor chamber,” Applied Thermal Engineering vol. 29, p. 2655, 2009.