臺灣博碩士論文加值系統

摘 要
近年大部分的液晶顯示器市場被主動式液晶顯示器所佔據，每一個畫素是由非晶矽薄膜電晶體作為光的開關。非晶矽薄膜電晶體的電子遷移率約為0.5~1.0 cm2/Vs，而此值已足夠驅動每個畫素。然而多晶矽薄膜電晶體的電子遷移率更可高達30~500 cm2/Vs，如此高的驅動能力能整合多種積體電路而有許多的應用。
目前，有許多研究直接在塑膠基板上製作低溫複晶矽薄膜電晶體，塑膠基板具有成本低、重量輕、可彎曲不破碎等優點。雖然在塑膠基板上製作薄膜電晶體具有許多優點，但是塑膠基板本身熔點較低所能承受的製程溫度較低，及薄膜與塑膠基板附著力不佳的問題仍有待解決，目前塑膠基板的最高承受溫度約為250℃，而限制了最高製程溫度。因此我們必須使用較低的製程溫度和較佳附著力的材料，以使用塑膠基板製作低溫複晶矽薄膜電晶體。
本研究使用了XeCl 準分子雷射在玻璃、矽晶片及塑膠上製作低溫複晶矽薄膜，以不同的參數來比較結晶速率和結晶品質，經儀器檢測分析，得到不同製程條件對其結晶程度、晶粒大小的影響。
摘 要
III族氮化物半導體，尤其是氮化鎵(GaN)已經成功實現藍綠光發光二極體、藍光雷射二極體及紫外光光源。
在本論文中，我們利用有機金屬氣相磊晶法(MOCVD)成長及研究氮化物半導體材料特性，包含未摻雜、n-型及p-型氮化鎵(GaN)與氮化鋁鎵(AlGaN)及氮化鎵/氮化銦鎵(GaN/ InGaN)多層量子井(MQW)結構。另外也成功利用有機金屬氣相磊晶法(MOVPE)來成長氮化鎵/氮化銦鎵(GaN/InGaN)多層量子井(MQW)結構藍色與綠光發光二極體(LED)。
利用波長325nm電射光所激發出的光譜(PL)、X光散射測量(XRD)、霍爾量測與光學顯微鏡(OM)的結果來瞭解氮化鎵的基本特性。
此外，在藍色發光二極體方面，在20mA的驅動電流下其發光波長及功率分別為445~480 nm及3.5mW。

Abstract
Most of the liquid crystal display market is covered by AM-LCD using amorphous silicon TFT (a-Si TFT) as a switch device for each pixel in recent years. The mobility of a-Si TFT, which is 0.5 ~ 1.0 cm2/Vs, drives each pixel sufficiently. The poly-Si TFT with its mobility as high as 30 ~ 500 cm2/Vs and high driving ability enable to integrate various circuit for many applications.
Recently, poly silicon TFTs directly fabricated on plastic substrates has been investigated. Plastic substrates have the advantages of low cost, light- weighted, thin-shaped, and rugged characteristics. Although plastic substrates have several advantages, but the use of plastic substrates involves a lot of technological challenges. Examples include low working temperature and weakly bonded films. The highest working temperature for plastic substrates are around 250℃, which limits the maximum processing temperature. Therefore, we must employ a low temperature process and strong bonded films to fabricate poly-silicon thin films on plastic substrates
Low temperature polycrystalline silicon has been prepared by XeCl excimer laser annealing (ELA) of amorphous silicon film on silicon, glass and plastic substrate. It analyze the size of polysilicon varied with laser energy density, number of laser shots, and moving velocity.
Abstract
The groups III-nitride semiconductors, especially Gallium nitride (GaN), have been successfully employed to realize blue-green light-emitting diodes, blue laser diodes and UV light source.
The growth and characteristics of the III-V nitrides semiconductor that consist of undoped GaN, n-type GaN, p-type GaN, AlGaN and InGaN/GaN MQW had been systematically studied. Using MOCVD techniques, the InGaN/GaN MQW green and blue LEDs were successfully fabricated.
From the results of the photoluminescence (PL) measured at 325nm He-Cd laser, the X-Ray diffraction (XRD) measurement, hall measurement and optics microscope (OM) views to realize the characteristic.
On the other hand, the InGaN/GaN MQW blue LED were also discussed in this chapter. The output power were 8mW. The peak wavelength range were 445~480nm.

目 錄
第一章 緒論……………………………………………………………1
1.1前言……………………...…………………………………………1
1.2簡介……………………………………………………………...…2
第二章 文獻回顧………………………………………………………...4
2.1 TFT LCD 的結構……………………...……………………….…4
2.2低溫多晶薄膜電晶體的製作技術………………………………..6
2.3 塑膠基板製作低溫多晶矽薄膜…………………………………16
第三章 實驗流程……………………………………………….………18
3.1 實驗流程圖……………………...………………….………..…18
3.2 試片的準備及沈積…………………………………….…….....19
3.3 準分子雷射退火……………………………………….……….20
3.4 各種分析儀器分析檢測………………………………………..21
第四章 結果與討論………………………….….……………………...27
4.1矽晶片及玻璃基板製作多晶矽薄膜………………………….…27
4.2塑膠基板製作多晶矽薄膜……………………………………….42
第五章 結論與未來工作………………………………………….……61
5.1 結論……………………………………………………………..61
5.2 未來工作…………………………………………………………62
第六章 參考文獻……………………………………………………….64
目 錄
第一章　緒論……………………………………….……………………1
1.1前言………………………………………………...……………1
1.2 簡介……………………………………………………...……...4
第二章 文獻回顧………………………………………………………...5
2.1發光二極體之發光原理……………………...…………………...5
2.2 GaN 材料發展近況………………………………………………7
2.3 GaN 晶體成長的歷史……………………………….…………...8
2.4 GaN基板與操作電壓…………………………………………...10
2.5 MOCVD設備之簡介…………………...……………………….12
2.6 GaN層成長……………………………………………………...18
2.5螢光轉換材料………………………………………….………...23
第三章 實驗流程…………………………………………………….…27
3.1 實驗流程圖……………………...…………………………..…27
3.2 成長LED各層…………………………………………….…....27
3.3 驗室量測設備…………………………………………...……...29
第四章 結果與討論………………………….………………………...32
第五章 結論與未來目標……………………………...…………….…48
第六章 參考文獻…………………………………………………...…..50

參考文獻
[1] Seminar lecture note, volume II, may 19, SID 2000, 2000.
[2] W.E. Howard, Proc. of Japan Display 89, 8 1989.
[3] Dr. Lee Kyung-ha,Kyung Hee Univ, “A study on Laser Annealed Polycrystalline Silicon Thin Film Transistors (TFTs) with SiNx Gate Insulator”, ,’98, 1998.
[4] P.G. Lecomber, W.E. Spear and A. Ghaith, Electron Lett. 15, 179, 1979.
[5] Hahn M. I., Abteilung S. P. and Kelulestr., IEEE, 2000.
[6] Mingxiang Wang, Z. M., Y. Z. and M. Wong, IEEE Trans. On ELE. DEVI. Vol.48 NO4. APRIL, 2001.
[7] Tsukada,Toshihisa, ”TFT/LCD:Liquide-Crystal Displays Addressed by Thin-film Transistors”, 1996.
[8] T.P. Brody, J.A. Asars and G.D. Dixon, IEEE Trans. Electron Devices ED-20, 995, 1984.
[9] K. Ichikawa, S. Suzuki, H. Matino, T. Aoki, T. Higuchi and Y. Oana, Tech. Tech. Digest of SID 89, 226, 1989.
[10] Inoue S, Utsunomiya S. Seaki, T. Shimoda, T., IEEE ELE. Devices ,49(8) Aug, 2002.
[11] A.Lewis, et al.,"Poly-Si TFT Driver Circuits for a-Si TF~-AMLCDs", SID 94 Digest, 251, 1994.
[12] 陳添富、葉清發，電子月刊第七卷第六期，2001年6月.
[13]. 林敬偉、鄭晃忠，電子月刊第六卷第十一期，2000年11月.
[14] H. Kakinuma, M. Mohri and T. Tsuruoka, J. Appl. Phys. 77, 646, 1995.
[15] Y. Morimoto. Y. Jinno, K. Hirai, H. Ogata. T. Yamada , and K. Y., Elec. Sec 144, 1997.
[16] L. Haji and P. Joubert, J. S. and N.A. Economou, J. Appl. 75(8), 15 April 1994.
[17] M. Miyasaka, T. Shimoda, K. Makihira, T. Asano, B.Pecz and J. Stoemenos, ”Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing”, Jap. J. Appl. 2003.
[18] Lee K. H. , Y.K. Fang and S.H. Fan, ”Au metal induced lateral amorphous silicon thin film with very low annealing temperature and fast MILC rate”, IEEE Vol 35, No13 ,1999.
[19] .W. Lee, Y.C. Heo and S.K. Joo, ”Pd induced lateral crystallization of amorphous-Si thin film” Appl. Phys. Lett 66(13),27,1995.
[20] S. W. Lee, and S. K. Joo, T. H. Ihn, ”Low temperature poly-Si thin film transistors fabrication by metal-induced lateral crystallization”, IEEE-EDL, vol.17, no.4, pp407-409, 1996.
[21] S. W. Lee, and S. K. Joo, T. H. Ihn, ”Fabrication of high-mobility p- channel poly-Si thin film transistors by self-aligned metal-induced lateral crystallization”, IEEE-EDL, vol.17, no.8, pp407-409, 1996.
[22] Kim Tae-Kyung, Gi-Bum Kim, Byung-ll Lee, and Seung-Ki Joo, ” The effects of electrical stress and temperature on the properties of P-Si TFT fabrication by metal induced lateral crystallization.” IEEE,Vol.21, No7 2000.
[23] D.P. Gosain, A. machida, T. Fujino, Y. Hitsuda, K. Nakano and J. Sato, “Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate”, Jpn. J. Appl. 2003
[24] I-Wei Wu”Journal of the SID 1944 1”, 1944.
[25] 賴耿陽，雷射技術原理實務，復漢出版社.
[26] 林三寶，雷射原理應用，全華科技圖書.
[27] Shih Chu-Jung,I-Min Lu and Li-Ming Wang ,”Spectroscopic Analysis in Laser Annealing LT poly-Si TFTs”, IEEE. 1999.
[28] 丁勝懋，雷射工程導論，中央圖書.
[29] E. Y. Ma, S.D. Theiss, M. H. Lu, C.C. Wu, J.C.Sturm, S. Wagner, “Thin Film Transistors for Foldable Displays”, in IEDM 97-535, 1997.
[30] P. M. Smith, P. G. Carey, and T.W. Sigmon, “Excimer Laser Crystallization and doping of silicon films on plastic substrates”, Appl. Phys. Lett. 70 (3). 20 January, 1997.
[31] 李宗銘，2001，工業材料169期，P87.
[32] Thesis S.D.,P.M. Smith, P. Wickboldt and T.W. Sigmon, ” PolySilicon Thin transistors Fabricated at 100 ℃ on Flexible Plastic Substrate”, IEEE. 1998.
[33] W.R. Runyan, T.J. Shaffner, “Semiconductor Measurements and Instrumentation”, 1997.
[34] 紀國鐘，蘇炎坤，”光電半導體技術手冊”.
[35] P.J. Goodhew and F.J. Humphreys, “Electron Microscopy and Analysis”, Taylor & Francis, 1988.
[36] L. Reimer, “Scanning Electron Microscopy, Physics of Image Formation and Microanalysis”, Springer-Verlag, Berlin, 1984.
[37] R. Wiesendger, “Scanning Probe Microscopy and Spectroscopy”, Cambridge University Press, 1994.
[38] 楊長謀，”材料分析” 中國材料科學學會，1998.
參考文獻
[1] 劉如熹，王健源，”白光二極製作技術 21世紀人的新曙光”.
[2] J. I. Pankove, “Gallium Nitride (GaN) I”(Academic press, San Diego,1998).
[3] 史光國，”現代半導體發光及雷射二極體材料技術”，全華科技圖書，(2001).
[4] 總合技研株式會社 “2002年版 白色LED的現狀與將來性”.
[5] J.K. Ho et al. Appl. Phys. Lett. 74, 1275(1999).
[6] “科儀新知”第二十四卷第二期.
[7] 李宗翰，2001，輔仁大學物理系碩士論文 ” 氮化銦薄膜之成長與光電特性研究”.
[8] G. B. Stringfellow, “Organometallic Vapor-Phase Epitaxy: Theory and Practice”, Ch2. Academic Press, Inc. (1989).
[9] S.Yoshida, J. Vac. Sci. Tech. B1(2), 200(1983).
[10] H. Amano et al. Thin Solid Films 163,415(1988).
[11] I. Akasaki et al. J. Crystal Growth 98, 209(1989).
[12] S. Nakamura jap. J. Appl. Phy. 30, L1705(1991).
[13] X. H. Wu et al. J. Crystal Growth 189/190,231(1998).
[14] A.E. Wickenden et al. J. Electron. Mater. 28, 301(1999).
[15] I. Akasaki et al. Jpn. J. Appl. Phys. 36,5393(1997).
[16] P.Kozodoy et al. Appl. Phy. Lett. 74,3681(1999).
[17] R.W. Martin et al. Appl. Phys. Lett. 71,635(1997).
[18] S. Keller et al. J. Crystal Growth, 195, 258(1998).
[19] Y. Yarada et al. J. Crystal Growth, 189/190, 611(1998).
[20] Y.H. Cho et al. Appl. Phys. Lett. 85, 3006(1999).
[21] Ho & G.B. Stringfellow, Appl. Phys. Lett. 2701(1996).
[22] H. Amano et al. J. Electron Chem. Soc. 137, 1639(1990).
[23] S. Nakamura et al. Jpn. J. Appl. Phys. 30, L1708(1991).
[24] Y. Kamiura et al. Jpn. J. Appl. Phys. 37,L970(1998).
[25] S. Nakamura et al. Jpn. J. Appl. Phys. 31, L139(1992).
[26] C.j. Eiting et al. J. Electron. Mater. 27, 206(1998).
[27] L. Sugiura et al. Jpn. J. Appl. Phys. 37, 3878(1998).
[28] Y. Ohba et al. J. Crystal Growth 145,214(1994).
[29] P. Kozodoy et al. J. Crystal Growth 195,265(1998).
[30] N. Akutsu et al. MRS Symp. Proc. 482,113(1998).
[31] H. Obloh et al. J. Crystal Growth 195, 270(1998).
[32] B. Kuhn et al. Phys. Stat. Solca. 176, 789(1999).
[33] NEDO，PIDA整理，1999／3.
[34] NEDO，PIDA整理，2000／3.
[35] NEDO，PIDA整理，2001／3.
[36] W.R. Runyan, T.J. Shaffner, “Semiconductor Measurements and Instrumentation”, (1997).
[37] 紀國鐘，蘇炎坤，”光電半導體技術手冊”.