|
In order to blue-shift the electroluminescence (EL) peak
wavelength of anamorphous p-i-n thin-film light-emitting diode
(TFLED), a higher optical-gapmaterial, a-SiN:H, was used as the
luminescent i-layer. Further, to improve the device EL
properties, the same material (a-SiN:H) was employed to from
thep-i and n-i brightness of a finished device, having a n+-a-
Si:H layer contactedwith the Al external electrode , was 200cd/
m2 at an injection current density of 4A/cm2. Its EL threshold
voltage was 11.7V and peak wavelength of EL spectrum.However,
its brightness is lower and not so good as expected. The
current-conductionmechanism of the a-SiN:H p-i-n TFLEDs was also
investigated. For a low applied voltage, the ohmic conduction is
dominat. Whereas, for a high applied voltage, the Frenkel-Poole
emission is the main conduction mechanism.
|