臺灣博碩士論文加值系統

本論文利用Li 摻雜於 Alq3 (50%, 5 nm)當摻雜式電子傳輸層(n-doped ETL)與MoO3 摻雜於TNATA 當作摻雜式電洞注入層(p-doped HIL)應用於白光有機發光二極體(WOLED)，使元件具有p-i-n 的元件結構。研究中針對摻雜式電洞注入層(p-doped HIL)的薄膜之物性和化性作一系列分析，以利於討論具p-i-n 結構之白光有機發光二極體的光電特性。
首先，在固定80 nm 厚度的2-TNATA 中摻雜不同比率的MoO3，比較元件的光電特性，當MoO3 摻雜比率為10 wt%時，在電流密度為20 mA/cm2 下，元件發光亮度、發光效率及功率效率分別為1517 cd/m2 、7.59 cd/A 及4.22 lm/W。
接著，當MoO3 摻雜比率固定為10 wt%時調整2-TNATA 的厚度，當發現2-TNATA 的厚度為80 nm 時，元件仍然保持最佳的光電特性。
最後，以2-TNATA：10 wt% MoO3 作為摻雜式電洞注入層並進行一系列的薄膜之物性和化性的分析，發現摻雜式電洞注入層的設計為元件光電特性改善的重要因素。

In this study, the Li-doped Alq3 (50%, 5 nm) as a doped electron transporting layer (n-doped ETL) and the MoO3-doped 2-TNATA as a doped hole injection layer (p-doped
HIL) were utilized to forme a p-i-n white organic light emitting diode (WOLED).Systematic analyses of MoO3-doped 2-TNATA thin film have been done to study the optoelectronic performance of p-i-n WOLED devices’ performance.
Fristly, the WOLED with various dopeing ratio of MoO3 in 80 nm thickness p-doped HIL of 2-TNATA have been fabricated. When 10 wt% MoO3 is doped in 2-TNATA film, the luminance, luminous efficiency and power efficiency of WOLED is about 1517 cd/m2, 7.59 cd/A and 4.22 lm/W, respectively, at 20 mA/cm2.
Secondly, the effect of various thicknesses of 2-TNATA layer on devices’ performance is investigated at a fixed MoO3 doping ratio of 10 wt%. The device still has the high efficiency when the device has the 2-TNATA thickness of 80 nm as p-doped HIL.
Finally, using systematically physical and chemical analyses on the MoO3-doped film, we found that the performance of p-i-n WOLED is indeed influenced by this
p-doped HIL.

總目錄
中文摘要 I
英文摘要 II
致謝 III
總目錄 IV
圖目錄 VI
表目錄 VIII

第一章 緒論 1
1-1 簡介 1
1-2 研究動機 1
第二章 文獻回顧 3
2-1 有機電致發光元件的發光原理與構造 3
2-2 有機電致發光元件的發展 4
2-3 有機電致發光元件材料特性與進展 5
2-3-1 小分子有機材料 5
2-3-2 高分子有機材料 7
2-4 改善有機發光元件發光效率的重要發展 7
2-4-1 結構方面的改善 7
2-4-2 低功函數負電極 8
2-4-3 主體(Host)-客體(Guest)材料摻雜系統 8
2-4-4 緩衝層(Buffer Layer)的加入 9
2-5 不同的有機電致發光元件結構 9
2-5-1 TOLED (Transparent Organic Light Emitting Devices) 9
2-5-2 IOLED (Inverted Organic Light Emitting Devices) 9
2-5-3 SOLED (Stacked Organic Light Emitting Devices) 10
2-5-4 改良元件的電子注入效果 10
2-6 元件的驅動方式 10
2-6-1 被動矩陣式(Passive Matrix) 10
2-6-2 主動矩陣式(Active Matrix) 11
2-7 元件衰壞機制 11
2-8 元件有機層與負電極界面探討研究 12
第三章 實驗方法 13
3-1 實驗材料 13
3-1-1 有機材料 13
3-1-2 氧化物材料 13
3-1-3 金屬材料 13
3-2 事前準備 13
3-3 系統、製程與元件量測 14
3-3-1系統 14
3-3-2實驗製程 14
3-3-3 元件量測 15
3-4 薄膜分析 15
3-4-1 原子力顯微鏡(Atomic Force Microscope) 16
3-4-2 化學分析電子光譜儀(ESCA) 16
3-4-3 紫外光/可見光光譜儀(UV/Vis spectrophotometer) 17
第四章 結果與討論 19
4-1 摻雜式電洞注入層對元件之影響研究 19
4-1-1 改變摻雜式電洞注入層比例對元件之影響 19
4-1-2 電子單載子元件 20
4-1-3 改變摻雜式電洞注入厚度對元件之影響 21
4-2 摻雜式電洞注入薄膜之影響 21
4-2-1 紫外光/可見光光譜儀(UV/Vis spectrophotometer)分析 21
4-2-2 電子能譜儀(X-ray Photoelectron Spectroscopy)分析 22
4-2-3 原子力顯微鏡(Atomic Force Microscope)分析 23
第五章 結論 24
Reference 25
圖目錄
圖2-1 有機電致發光元件示意圖 28
圖2-2 典型雙層有機電致發光元件分子能階示意圖 28
圖2-3 產生分子激子A+的示意圖 29
圖2-4 多層有機發光二極體元件結構圖 29
圖2-5 1990年Adachi等人所發表的幽禁式(confinement)的三層結構 30
圖2-6 1992年Gustafsson等人發表的可撓式有機電致發光元件 30
圖2-7 透明有機電致發光元件示意圖 31
圖2-8 反置型有機電致發光元件結構 31
圖2-9 堆疊型有機電致發光元件 32
圖3-1 實驗系統機台部份 32
圖3-2 控制面板部份 33
圖3-3 元件成膜之流程 34
圖3-4 元件封裝示意圖 35
圖3-5 硬體量測示意圖 35
圖3-6 I-V-B量測系統 36
圖3-7 原子力顯微鏡結構示意圖 36
圖3-8 光電效應過程示意圖 37
圖3-9 電子能階的轉移型態 37
圖3-10 吸收光譜法之設備組成 38
圖4-1 (a) 具undoped p-i-n 結構之有機白光發光二極體 39
圖4-1 (a) undoped p-i-n WOLED E-L發光頻譜 39
圖4-2 改變p-doped HIL比例之元件結構示意圖 40
圖4-3 不同摻雜p-doped HIL之WOLED電流密度-電壓特性圖 41
圖4-4 不同摻雜p-doped HIL之WOLED發光亮度-電流密度特性圖 41
圖4-5 不同摻雜p-doped HIL之WOLED發光效率-電流密度特性圖 42
圖4-6 不同摻雜p-doped HIL之WOLED流明/瓦-電流密度特性圖 42
圖4-7 不同摻雜p-doped HIL之WOLED E-L 發光頻譜 43
圖4-8 不同摻雜p-doped HIL之WOLED CIE座標 43
圖4-9 (a) 不同摻雜p-doped HIL之 Hole-Only元件結構 44
圖4-9 (b) 不同摻雜p-doped HIL之 Hole-Only元件電流密度-電壓特性圖 44
圖4-10改變p-doped HIL厚度之元件結構示意圖 45
圖4-11 不同厚度p-doped HIL之WOLED發光效率-電流密度特性圖 46
圖4-12 不同厚度p-doped HIL之WOLED流明/瓦-電流密度特性圖 46
圖4-13 紫外光/可見光/近紅外光吸收頻譜分析 47
圖4-14 (a) Mo 3d軌域電子能譜儀(XPS)分析 48
圖4-15 (b) Mo 3p軌域電子能譜儀(XPS)分析 48
圖4-15 (a) 2-TNATA薄膜表面型態圖 49
圖4-15 (b) MoO3-doped 2-TNATA薄膜表面型態圖 49

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