臺灣博碩士論文加值系統

本論文主要研究I–IV–VI族三元化合物，利用簡單、低成本的熱溶劑回流法製備I–IV–VI族三元化合物之前驅層，經過熱退火處理後，可得到I–IV–VI族三元化合物薄膜，此薄膜適用於薄膜太陽能電池之吸收層。首先我們利用熱溶劑回流法製備不同濃度的銅錫硫前驅層溶液，在硫的氛圍下將銅錫硫前驅層進行熱退火處理，發現在較低濃度、沒有三元相存在的前驅層，經過硫化熱處理後可以得到單一的銅錫硫三元相為P-type的薄膜，其載子濃度為5.23×1017 cm-3、載子遷移率為 14.2 cm2 V−1 s−1，適合作為薄膜太陽能電池之吸收層。
其次，我們利用熱溶劑回流法製備不同合成時間的銅錫硒前驅層溶液，發現在較長的合成時間下，可以得到單一相的三元銅錫硒薄膜，在較短的合成時間下，前驅層充滿尚未反應的銅錫硒原子團。將製備的前驅層在硒的氛圍下進行熱處理，發現經過較長合成時間的薄膜產生強烈的銅硒二元相，其三元相結構也被破壞、減弱，相較之下，經過較短合成時間的薄膜產生單一的三元相，而且顆粒有明顯的增大，經過硒化熱處理後可以得到單一的銅錫硒三元相為P-type的薄膜，其載子濃度為1.9×1017 cm−3、載子遷移率為 13.66 cm2 V−1 s−1，薄膜適合作為薄膜太陽能電池之吸收層。
本論文利用一個較簡單、低成本且較無毒的熱溶劑回流法，經過熱退火處理後，得到I–IV–VI族三元化合物薄膜，經測量後證明此薄膜適合作為薄膜太陽能電池之吸收層。

In this study, we investigated the ternary I–IV–VI compounds semiconductor layer synthesized by a simple and low-cost solvent-thermal refluxing method follow annealing. The thin films are suitable to be absorber layer of solar cells. At first, we fabricated the varied concentration of Cu-Sn-S precursor ink. After sulfurization, we obtained pure phase of CTS by sulfurizing the Cu-Sn-S precursor of the lower concentration. The CTS thin film is p-type with a carrier concentration of ∼5.23×1017 cm-3, and hole mobility of 14.2 cm2 V−1 s−1, which is suitable to be absorber layer of solar cells.
We fabricated the Cu-Sn-Se precursor ink by different reaction time. At the longer reaction time, we obtained pure phase of CTSe. At the shorter reaction time, we obtained Cu2-xSe crystals and unformed Cu-Sn-Se groups. After selenization, the structures of Cu2SnSe3 were destructured and binary CuSe appeared. In contrast, after selenization, the precursors of short reaction time transform into pure Cu2SnSe3. The CTSe thin film is p-type with a carrier concentration of ∼1.9×1017 cm−3, and higher hole mobility of 13.66 cm2 V−1 s−1, which is suitable to be absorber layer of solar cells.
In this study, we fabricated the ternary I–IV–VI compounds thin films by a simple and low-cost solvent-thermal refluxing method and and annealing.

摘要 i
Abstract ii
誌謝 iii
Contents iv
List of Figures vi
List of Tables viii
Chapter 1. Introduction 1
1-1 Background 1
1-2 History of photovoltaic (PV) 1
1-3 Development of Thin film solar cells 3
1-3-1 Amorphous Silicon Solar Cell 3
1-3-2 Cadmium Telluride Thin Film Solar Cell 3
1-3-3 Copper Indium Gallium Diselenide Thin Film Solar Cell 4
1-3-4 Kesterite based and Thin film Chalcogenide Solar Cells 4
1-4 Literature review of Cu2SnS3 5
1-4-1 Electron Beam Evaporation 6
1-4-2 Dc Magnetron Sputtering 6
1-4-2 Successive Ionic Layer Adsorption and Reaction (SILAR) 7
1-4-4 Solvothermal Method 7
1-5 Literature review of Cu2SnSe3 8
1-5-1 Co-evaporation 8
1-5-2 Single-step D.C. sputtering 9
1-5-3 Colloidal Methods 10
1-6 Motivation 10
1-7 Contribution of thid thesis 10
1-8 Structure of this thesis 11
1-9 References 11
Chapter 2 Fabrication and sulfurization of Cu2SnS3 thin films by reaction rate tuning the concentration of Cu-Sn-S precursor ink. 17
2-1 Introduction 18
2-2 Experiment 20
2-3 Results and Discussion 21
2-3-1 Characterization of the synthesized Cu-Sn-S precursor after sulfurization and the formation mechanism related to solution concentration 21
2-3-2 Characterization of CTS films following sulfurization for varied sulfurization time 25
2-4 Summary 29
2-5 References 30
Chapter 3 Fabrication and selenization of Cu2SnSe3 thin films by varied the reaction time of Cu-Sn-Se precursor ink 45
3-1 Introduction 45
3-2 Experiment 47
3-3 Results and Discussion 48
3-3-1 Characterization of the synthesized Cu-Sn-Se precursor nanoinks and after selenization and the formation mechanism related to different reaction time 48
3-3-2 Characterization of CTSe films after selenization for varied temperature 55
3-4 Summary 57
3-5 References 58
Chapter 4 Conclusions and Future work 78
4-1 Conclusions 78
4-2 Future work 78

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