臺灣博碩士論文加值系統

在本論文研究當中，我們成功的利用射頻磁控濺鍍沉積技術，插入高品質超薄型二氧化鉿與三氧化二鋁薄膜，來研製雙層式閘極介電層之氮化鋁鎵/氮化鎵金屬-氧化物-半導體高電子遷移率電晶體。我們使用射頻磁控濺鍍法來沉積二氧化鉿薄膜，當作元件的閘極介電層，目的為降低元件閘極漏電流以及提升崩潰電壓的特性，除此之外，插入三氧化二鋁薄膜，藉由其高能隙以及高崩潰電壓的材料特性，能夠進一步有效的抑制閘極漏電流的出現與提升截止狀態的崩潰電壓，並且降低介面缺陷密度。
本研究論文當中，藉由比較傳統型氮化鋁鎵/氮化鎵高電子遷移率電晶體以及氮化鋁鎵/氮化鎵金屬-氧化物-半導體高電子遷移率電晶體，成功的使得氮化鋁鎵/氮化鎵雙層式-金屬-氧化物-半導體高電子遷移率電晶體的閘極漏電流降低三至五個數量級，並且成功的提高崩潰電壓70伏特，而且其他的電性也都有所增加。
本研究論文使用射頻濺鍍技術，沉積二氧化鉿薄膜以及三氧化二鋁薄膜，成功的於實驗當中製備出雙層式-金屬-氧化物-半導體之高電子遷移率電晶體。在閘極電壓對源極電壓為 3 V的時候(Vgs = 3 V)，最大的汲極電流密度成功提升至 720 (mA / mm)，而最大的外部轉導值達到132.4 (mS/mm)，而臨界電壓成功的提升至 -2.32 V，而在選取閘極電壓為-6 V( Vg = -6 V)之下，閘極漏電流有效地降低至1.712 × 10-8 (mA/mm)，而在汲極對源極的電壓為6 V(Vds = 6 V)的條件下，電流開關比提升至2.039 × 1010，以及次臨界擺幅有效降低至 81 (mV/dec)，而三端崩潰電壓提升至120 V，而最大的電容值為1332 ( nF/cm2 )，而最大的震盪頻率為8.3 (GHz)。

SUMMARY
In this study, AlGaN/GaN double-metal-oxide-semiconductor high electron mobility transistors (Double MOS-HEMTs) with stacked high quality ultra-thin HfO2/Al2O3 as gate dielectric layer have been successfully fabricated by the RF-sputtered technique. We have used RF sputter to deposit HfO2 thin film as the gate dielectric layer in order to reduce the gate leakage current and enhance the breakdown voltage performance. In addition, we have used Al2O3 dielectric which has high bandgap and high off-state breakdown voltage can further effectively suppress gate leakage current and increase off-state breakdown voltage and decrease interface state density.
In this work, the Double MOS-HEMTs of the gate leakage current is successfully reduced by 3-5 orders of magnitude, and the off-state breakdown voltage increased by approximately 70V compared with conventional AlGaN/GaN high electron mobility transistors and AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors with a high-k HfO2 dielectric as gate oxide layer. Other electrical performances are also enhanced obviously.
In this study, AlGaN/GaN double-metal-oxide-semiconductor high electron mobility transistors (Double MOS-HEMTs) with stacked high quality ultra-thin HfO2/Al2O3 as gate dielectric layer have been successfully fabricated by the RF-sputtered technique. In this work, we have demonstrated the Double MOS-HEMTs threshold voltage successfully shifted to -2.32 V with the maximum drain current density is successfully improved to 720 mA/mm at VGS = 3 V. The transfer characteristics show a maximum transconductance characteristics of 132.4 mS/mm, a subthreshold swing is effectively reduced to 81 mV/dec, and an on/off ratio reaches 2.039 × 1010 at VDS = 6 V. The gate leakage current is effectively reduced to 1.712 × 10-8 mA/mm at VGS = -6 V and the three-terminal breakdown voltage reaches 120 V. The maximum capacitance reaches 1332 nF/cm2, and a maximum oscillation frequency is 8.3 GHz.

目錄
摘要 I
SUMMARY III
誌謝 XVII
目錄 XXII
表目錄 XXVI
圖目錄 XXVII
第一章 緒論 1
1-1 前言 1
1-2 研究動機 6
1-3 論文組織 9
第二章 高電子遷移率電晶體理論基礎 10
2-1 晶格結構(Lattice structure) 10
2-2 基板材料(Substrate material) 11
2-3 自發極化(Spontaneous polarization) 13
2-4 壓電極化(Piezoelectric polarization) 15
2-5 二維電子氣(Two-dimensional electron gas, 2DEG) 18
第三章 製程量測儀器介紹與實驗方法 22
3-1 濺鍍沉積介紹 22
3-1-1 二氧化鉿介紹(HfO2) 22
3-1-2 三氧化二鋁介紹(Al2O3) 24
3-1-3 射頻濺鍍系統(Radio Frequency Sputter System) 26
3-2 實驗製程設備介紹 28
3-2-1 電子束蒸鍍機系統(Electron Beam Evaporator) 28
3-2-2 快速熱退火系統(Rapid Thermal Annealing, RTA) 30
3-2-3 旋轉塗佈機(Spin Coater) 32
3-2-4 烤箱(Oven) 33
3-2-5 光罩對準機(Mask Aligner) 35
3-2-6 射頻磁控共濺鍍機系統(RF Co-Sputter Deposition) 36
3-2-7 感應耦合電漿-反應離子蝕刻機系統(ICP-RIE) 38
3-2-8 乾蝕刻系統(Dry Etching System) 40
3-3 實驗量測設備介紹 44
3-3-1 原子力顯微鏡(Atomic Force Microscope, AFM) 44
3-3-2 X光繞射儀(X-Ray Diffraction, XRD) 45
3-3-3 半導體元件分析儀系統(Semiconductor Device Parameter Analyzer, B1500A) 46
3-4 實驗方法 47
3-4-1 平台隔離(Mesa isolation) 48
3-4-2 源極與汲極歐姆接觸(Source and drain ohmic contact) 50
3-4-3 定義閘極區域圖案(Define gate region patterns) 53
3-4-4 二氧化鉿閘極氧化層沉積 54
3-4-5 三氧化二鋁插入層沉積 55
3-4-6 閘極蕭特基接觸(Gate Schottky contact) 55
第四章 結果與討論 60
4-1 二氧化鉿材料分析 60
4-1-1 X-射線繞射分析(X-ray Diffraction) 60
4-1-2 原子力顯微鏡（Atomic Force Microscope） 62
4-2 三氧化二鋁材料分析 64
4-2-1 X-射線繞射分析(X-ray Diffraction) 64
4-2-2 原子力顯微鏡（Atomic Force Microscope） 66
4-3 二氧化鉿/三氧化二鋁之雙層材料分析 68
4-3-1 X-射線繞射分析(X-ray Diffraction) 68
4-3-2 原子力顯微鏡（Atomic Force Microscope） 70
4-4傳統式空乏型高電子遷移率電晶體(Conventional D-mode HEMT) 72
4-4-1 飽和汲極電流(Saturation Drain Current) 72
4-4-2 轉移曲線特性與轉導特性(Transfer Curve Characteristics and Transconductance Characteristics) 74
4-4-3 閘極漏電流(Gate Leakage Current) 76
4-4-4 次臨界擺幅與電流開關比(Subthreshold Swing and ION / IOFF Ratio) 78
4-4-5 截止狀態崩潰電壓(Off-state Breakdown Voltage) 81
4-4-6 電容-電壓量測特性(Capacitance-Voltage Measurement Characteristics) 83
4-5 金屬氧化物半導體-高電子遷移率電晶體(MOS-HEMT) 85
4-5-1 飽和汲極電流(Saturation Drain Current) 85
4-5-2 轉移曲線特性與轉導特性(Transfer Curve Characteristics and Transconductance Characteristics) 88
4-5-3 閘極漏電流(Gate Leakage Current) 91
4-5-4 次臨界擺幅與電流開關比(Subthreshold Swing and ION / IOFF Ratio) 93
4-5-5 截止狀態崩潰電壓(Off-state Breakdown Voltage) 97
4-5-6 電容-電壓量測特性(Capacitance-Voltage Measurement Characteristics) 99
4-6 雙層式金屬氧化物半導體-高電子遷移率電晶體(Double MOS-HEMT) 101
4-6-1 飽和汲極電流(Saturation Drain Current) 101
4-6-2 轉移曲線特性與轉導特性(Transfer Curve Characteristics and Transconductance Characteristics) 104
4-6-3 閘極漏電流(Gate Leakage Current) 108
4-6-4 次臨界擺幅與電流開關比(Subthreshold Swing and ION / IOFF Ratio) 111
4-6-5 截止狀態崩潰電壓(Off-state Breakdown Voltage) 115
4-6-6 電容-電壓量測特性(Capacitance-Voltage Measurement Characteristics) 117
4-6-7 截止頻率與最大震盪頻率(Cutoff Frequency and Maximum Oscillation Frequency) 119
第五章 結論 121
第六章 未來展望 125
參考文獻 126

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