臺灣博碩士論文加值系統

本研究將以旋轉塗佈方式成長氧化鋅薄膜。塗佈液為醋酸鋅與氫氧化鈉水溶液適當比例混合液，接著將塗佈液均勻塗佈於玻璃與矽基板上，最後再以高溫爐管或快速熱退火機烘烤形成氧化鋅薄膜。
本研究主要以不同醋酸鋅水溶液濃度、不同氫氧化鈉水溶液濃度及不同烘烤溫度等參數成長氧化鋅薄膜。先以薄膜穿透率、光激發光頻譜之半高寬及中心波長等量測分析薄膜光特性；接著透過原子力顯微鏡及掃描式電子顯微鏡分析薄膜之表面型態及剖面結構；最後再以拉曼散射儀分析薄膜內原子的鍵結關係。我們發現成長最佳化氧化鋅薄膜之醋酸鋅與氫氧化鈉水溶液濃度分別為：醋酸鋅0.02M氫氧化鈉1M；最佳烘烤方式為：RTA真空30秒；最佳烘烤溫度為：200℃。最佳化氧化鋅薄膜之平均穿透率為 90%；均方根粗糙程度為 10.831nm；光激發光中心波長約在379nm；半高寬為20nm。由於薄膜具高穿透率且不具導電性因此未來可以在氧化鋅薄膜中引入銀粒子形成表面電漿效應並應用至光電元件中。

Zinc oxide (ZnO) thin film was prepared by spin-coating technology in this thesis. The solution composed of zinc acetate and sodium hydroxide is used as the coating, which spins on the silicon and glass substrate uniformly. The ZnO film will form on the substrate after baking in furnace or rapid thermal annealing system. The effects of zinc acetate concentration, sodium hydroxide concentration, and baking temperature were investigated in this thesis through the intensity and full width at half maximum (FWHM) of photoluminescence (PL), transmittance in visual range, atomic force microscope (AFM) images, scan electron microscope (SEM) images, and Raman scattering. The optimal concentration of zinc acetate and sodium hydroxide are 0.02M and 1M, respectively. The best baking temperature is about 200 oC under vacuum condition. The transmittance and root-mean-square (RMS) roughness of ZnO film are 90 % and 10.831nm, respectively under the optimal condition. The peak position and FWHM of PL spectrum at optimal condition are 379 nm and 20 nm, respectively. With introducing the silver nano-particles in the ZnO thin film can bring in the surface plasmon effect, which can apply to the optoelectronics to enhance the efficiency.

目錄
中文摘要 ……………………………………………………… i
英文摘要 ……………………………………………………… ii
致謝 ……………………………………………………… iv
目錄 ……………………………………………………… v
表目錄 ……………………………………………………… vii
圖目錄 ……………………………………………………… viii
第一章 導論……………………………………………… 1
1.1 前言……………………………………………… 1
1.2 簡介……………………………………………… 2
1.3 研究動機……………………………………… 9
第二章 基礎理論與實驗流程………………… 10
2.1 薄膜沉積原理……………………………… 10
2.2 實驗流程……………………………………… 11
2.2.1 實驗前置準備……………………………… 11
2.2.2 實驗流程圖………………………………… 15
2.2.3 實驗分析……………………………………… 15
2.3 量測分析……………………………………… 16
2.3.1 紫外線-可見光-紅外線光譜儀(UV-Vis Spectrum)…………………… 16
2.3.2 場發掃描式電子顯微鏡(FE-SEM)16
2.3.3 能量散佈分析儀(EDS)…………… 17
2.3.4 原子力顯微鏡(Atomic Force Microscope, AFM)…………… 17
2.3.5 光激發光量測系統(PL)………… 18
2.3.6 拉曼光譜儀(micro-RamanSpectroscopy)…………………… 19
2.4 製程設備…………………………………… 20
2.4.1 高溫爐……………………………………… 20
2.4.2 快速熱退火製程(Rapid thermal Annealing,RTA)…………………20
第三章 實驗結果與討論………………………… 21
3.1 薄膜厚度分析…………………………… 21
3.2 穿透率量測………………………………… 27
3.3 場發掃描式電子顯微鏡(FE-SEM)32
3.4 能量散佈分析儀(EDS)…………… 34
3.5 原子力顯微鏡觀察與分析(Atomi
Force Microscopy, AFM) 38
3.6 光激發光量測系統(PL)………… 43
3.7 拉曼光譜儀(Micro-Raman Spectroscopy)…………………………… 44
第四章 結論……………………………………………… 45
參考文獻 ……………………………………………………… 46
英文論文
大綱 ……………………………………………………… 51
簡歷 ………………………………………………………… 55

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