臺灣博碩士論文加值系統

氧化銻錫薄膜(ATO)內有很高的載子濃度(1020 cm-3)，故導電性良好，且在可見光範圍內為透明的。透明導電薄膜，隨著光電產品的進步，其應用非常廣泛，可應用在液晶顯示器、光電二極體、電致色元件、抗靜電膜、觸控式螢幕等。由於在置備或操作元件時，薄膜會暴露在熱的環境中，可能造成薄膜的微結構及光電性質隨溫度而改變，並影響元件的使用性質。故溫度與透明導電薄膜的關係很重要。在本研究中，除探討製程中氧分壓的變化對ATO薄膜的影響，更將以不同氣氛及溫度對薄膜作退火實驗，並針對薄膜的光電性質及微結構做探討及分析。
本研究利用射頻反應磁控濺鍍法(RF reactive magnetron sputtering)濺射ATO薄膜於康寧玻璃1737F基材上。氧氣流量的變化控制在7-20 sccm，而退火氣氛分別為氧氣及氮氣，退火溫度分別為300℃、400℃及500℃。實驗結果發現隨著氧流量的增加，濺鍍速率最初急速下降，而後漸趨平緩。初鍍膜的電阻係數也隨著氧氣流量的增加，有一先降後升的趨勢，在氧氣流量為10 sccm可得一最低之電阻係數8.08×10-2Ω-cm。
然而退火後之電性得到了明顯的改善，退火溫度越高，其電阻係數越低；其原因為退火造成晶粒成長，而載子濃度及移動率均隨退火溫度增加而上升。且在氮氣中退火較氧氣中可得較低的電阻係數，其中以氮氣中500℃退火1 小時可得最低之電阻係數3.92×10-3Ω-cm。這樣的結果與晶界上氧的吸附有關。此外，亦可發現，退火後的ATO薄膜可提高近紫外光區的可見光穿透率。

Antinomy doped tin oxide (ATO) films have been extensively used in electronic and opto-electronic applications because of their high carrier concentration, low electrical resistivity and high transmission in the visible range. In this study, ATO films were deposited on corning glass 1737F by RF magnetron reactive sputtering with different oxygen partial pressures. The effects of annealing temperature and atmosphere on the composition, microstructure, surface morphology, conductivity and optical properties of ATO films were investigated.
The results of conductivity measurements revealed that the resistivity decrease initially and then increase again with oxygen flow rate. After thermal annealing, the resistivity became one to two orders of magnitude lower than those observed in as-deposited films. The decrease in resistivity with annealing temperature is because of the increase in carrier mobility and concentration.
Results also showed that films after annealing at 500℃ in nitrogen, a low resistivity of 3.92×10-3Ω-cm and high transparency of 80% were obtained. This can be explained by the desorption of oxygen from the grain boundaries. In addition, the absorption edge moves toward lower wavelength after annealing.
ABSTRACT.......... III
表目錄............ VI
圖目錄............ VII
第一章、緒論...... 1
1.1 前言.......... 1
1.2 研究重點...... 4
第二章、理論基礎..5
2.1 濺鍍理論...... 5
2.2 射頻電源的自偏壓現象... 10
2.3 鍍層的成核.... 12
2.4 氧化銻錫（ATO）薄膜的特性........16
第三章、實驗方法與步驟..... 24
3.1 實驗流程...... 24
3.2實驗前準備..... 24
3.2.1基材前處理... 24
3.3 實驗設備...... 27
3.4 濺鍍步驟與條件......... 27
3.5 退火處理...... 27
3.6 鍍層分析及性質測試..... 32
3.6.1 測量濺鍍速率 .........32
3.6.2 電性量測.... 32
3.6.3 光學性質量測......... 35
3.6.4 微結構觀察........... 35
3.6.5 X-ray繞射分析........ 35
3.6.6 AES成份分析.......... 36
第四章、結果與討論......... 37
4.1 反應濺鍍速率........... 37
4.2 組成與微結構分析....... 40
4.2.1 組成分析.... 40
4.2.2 X-ray繞射分析........ 45
4.2.3 微結構...... 51
4.3 電性.......... 59
4.4 光學性質...... 71
第五章、結論...... 75
未來研究方向...... 76
參考文獻.......... 77

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