臺灣博碩士論文加值系統

我們在玻璃基板上製作出高效能的增強式氧化鋅薄膜電晶體。氧化鋅薄膜是用射頻濺鍍的方式在通氧下低溫沈積而成，接著再將氧化鋅薄膜表面做最佳的氧處理。當電晶體在飽和區且偏壓為VDS=10∼20V 和VGS = 5V時，氧化鋅薄膜電晶體最高之IDS = 0.85 mA，電流開/關比為 1.47×106 ，場效電子遷移率最高為 391.6 cm2/Vs。我們相信這些結果是目前效能最佳的氧化鋅薄膜電晶體之一。

We demonstrate a high-performance enhancement-mode ZnO TFT on a glass substrate. The ZnO thin film is deposited by RF magnetron sputtering with the presence of O2 at low temperature and optimized oxygen passivation conditions on the ZnO surface. When biased at the saturation region VDS = 10~20V and VGS = 5V, the IDS is as high as 0.85mA. The Ion/Ioff ratio is 1.47×106 and field effect mobility as high as 391.6 cm2/Vs. We believe the results are among the best ZnO TFTs ever obtained.

目 錄

第一章 簡介
1-1 背景簡介............................................ 1
1-2 研究動機............................................ 2
1-3 論文架構............................................ 3

第二章 理論基礎
2-1 材料特性與結購...................................... 4
2-1.1 氧化銦錫晶體特性與結構.......................... 4
2-1.2 氧化鋅晶體特性與結構............................ 5
2-2 金屬-氧化物-半導體場效電晶體........................ 9
2-2.1 金屬-氧化層-半導體操作原理及結構................ 9
2-2.2 金屬-氧化層-半導體的操作模式....................10
2-2.3 氧化鋅薄膜電晶體工作原理....................... 12
2-3 濺鍍原理........................................... 15
2-3.1 直流濺鍍....................................... 15
2-3.2 射頻濺鍍....................................... 16

第三章 實驗步驟與方法
3-1 簡介............................................... 18
3-2 實驗材料........................................... 18
3-3 實驗設備........................................... 19
3-3.1 射頻濺鍍機..................................... 19
3-3.2 電漿清洗機..................................... 19
3-3.3 X-ray繞射分析儀................................ 20
3-3.4 原子力掃瞄探針顯微鏡........................... 20
3-4 製作流程................................... 21

第四章 實驗結果與討論
4-1 氧濃度對氧化鋅薄膜電晶體特性之影響................. 24
4-2 基板溫度對氧化鋅薄膜電晶體特性之影響............... 31
4-3 氧處理時間對氧化鋅薄膜電晶體特性之影響............. 38

第五章 結論與未來展望
5-1 結論與未來展望..................................... 50

參考文獻................................................ 51

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