臺灣博碩士論文加值系統

本論文以獨特的兩階段成長方法，不用金屬催化劑之輔助，成長SiCN奈米柱及奈米線。第一階段先以電子迴旋共振化學氣相沉積法ECR-CVD(Electron Cyclotron Resonance Chemical Vapor Deposition)於矽基板上成長不同密度的奈米晶粒（nanocrystal）的緩衝層(buffer layer)，第二階段再以微波電漿輔助化學氣相沉積法MW-PECVD(Microwave Plasma Enhanced Chemical Vapor Deposition)繼續高方向選擇性快速成長，始可達到SiCN矽碳氮奈米柱狀及線狀結構(Nanorods and Nanowires)。並且，我們發現奈米柱或奈米線之密度可由緩衝層之奈米晶粒密度加以控制。以掃瞄式電子顯微鏡(SEM)觀看奈米柱形貌為六角實心柱，直徑為10~60nm，長1~1.5m，奈米線直徑為8~60nm，長4~6m；以XRD、HRTEM探討奈米柱其結構接近α-Si3N4，且為單晶；以EDS( Energy Dispersive X-ray Spectroscopy)及X光光電子光譜XPS及Auger電子能譜得知奈米結構的鍵結及成分，確實含有矽、碳、氮；以光激發螢光光譜PL(Photoluminescence)及壓電調制反射光譜PzR(Piezoelectric reflection spectroscopy)研究奈米柱之光學性質，其具有較寬的直接能隙為4.2eV；這種奈米柱狀結構的場發射(Field Emission)效果非常特殊，在36.7 V/m外加電場，其電流密度可達4.5mA/cm2，有機會能成為藍光或紫光光電材料和場發射顯示器(FED)的明日之星。

In this thesis, an innovative two-stage growth strategy will be presented for the growth of SiCN nanorods and nanowires. In the first stage, an electron cyclotron resonance chemical vapor deposition (ECR-CVD) method was employed to deposit nano-crystalline SiCN buffer layers with various densities on silicon substrates. In the second stage, SiCN nanorods and nanowires were grown rapidly and anisotropically in a microwave plasma enhanced chemical vapor deposition (MW-PECVD) The density of the nanorods or nanowires were determined by the density of the nanocrystals in the buffer layer. The morphology of the nanorods are hexagonal solid rods with diameters of 10 ~ 60 nm and lengths of 1 ~ 1.5 m, while nanowires have diameters of 8 ~ 60 nm and lengths of 4 ~ 6 m. XRD and HRTEM analyses indicated that the structure of the nanorods was close to that of -Si3N4. The EDS (energy dispersive X-ray) and XPS (X-ray photo-electron spectroscopy) confirmed the these nano-structures were composed of silicon, carbon and nitrogen. PL (photoluminescence) and PzR (piezoelectric reflectance spectroscopy) were adapted to measure the optical properties of nanorods and the result showed that a broad direct band gap at 4.2 eV was obtained. The field emission properties of the nanorods are very promising. The emission current could be raised to 4.5 mA/cm2 under in applied external electrical field of 36.7 V/m. This material has a high potential for the blue or UV optoelectronic and field emission display (FED) applications.

誌謝 i
摘要 ii
Abstract iv
目錄 v
圖目錄 vii
表格目錄 ix
第一章 緒論 1
第二章 實驗方法 5
2-1 製程設備 5
2-1.1 電漿輔助化學氣相沉積 5
2-1.2 微波電漿輔助化學氣相沉積法（MW-PECVD） 7
2-1.3 電子迴旋共振電漿輔助化學氣相沉積法（ECR-PECVD） 12
2-2 實驗步驟 14
2-2.1 基板之準備 15
2-2.2 ECR-PECVD系統成長緩衝層 17
2-2.3 MW-PECVD系統成長SiCN奈米結構 18
2-3 分析工具簡介 20
2-3.1 掃瞄式電子顯微鏡 ( SEM ) 20
2-3.2 穿透式電子顯微鏡 ( TEM ) 20
2-3.3 能量分散式光譜儀 ( EDX ) 20
2-3.4 X光繞射儀 ( XRD ) 21
2-3.5 X光光電子能譜儀 ( XPS ) 22
2-3.6 歐傑電子光譜（AES） 23
2-3.7 光激發螢光光譜儀 ( PL ) 23
2-3.8 壓電調制反射技術 ( PzR ) 26
2-3.9 場發射電流分析儀 ( Field Emission ) 27
第三章 結果與討論 29
3-1 SiCN奈米柱之成長條件、形貌與成分分析 29
3-2 SiCN奈米柱之結構及鍵結分析 36
3-3 不同緩衝層對SiCN奈米柱的影響 44
3-4 不同壓力、功率對SiCN奈米柱之影響 49
3-5 不同氣體濃度對SiCN奈米柱之影響 52
3-6 SiCN奈米線之成長條件、形貌與成分分析 58
3-7 奈米線之結構分析 64
3-8 奈米柱及奈米線之成長參數範圍 67
3-9 奈米柱之光學性質分析 70
3-10 SiCN奈米柱之場發射研究 77
第四章 結論 83
參考文獻 85

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