臺灣博碩士論文加值系統

本論文研究的主要目的為開發具長效維持P型傳導之氧化鋅半導體薄膜。利用直流濺鍍系統沉積氮化鋅薄膜，在進行RTA快速熱退火氧化，以前驅物氧化的方式做摻雜，文中探討了在不同壓力製程下，氮化鋅薄膜結構受環境影響情形及藉由不同的溫度及時間退火再利用拉曼及XPS分析薄膜中的含氮情況。
結果發現過高溫度及過長持溫的退火皆會導致薄膜含氮量的下降，以及在少量含氧環境中退火氧化可得P型傳導氧化鋅，並維持長達半年期間不退化。

The main purpose of this paper is to develop a long-term to maintain the zinc oxide semiconductor thin films of P-type conductivity. Using DC sputtering system to depositing zinc nitride film, and rapid thermal annealing during oxidation, in the manner of doing precursor oxide doped. This paper discusses the process at different pressures, zinc nitride film structures influenced by the environment and by circumstances different annealing temperature and time again by Raman and XPS analysis of the film in the case of nitrogen. The results showed that high temperature and long annealing time will lead to decreased degradation of the nitrogen content of the film, as well as a small amount of oxygen atmosphere during annealing can be obtained P-type conductivity oxide, zinc oxide, and last up to six months.

Acknowledgements I
Abstract II
中文摘要 III
Contents IV
Table of contents VIII
Figure of contents IX
Chapter One - Introduction 1
1.1 Introduction 1
1.1.1 Zinc oxide (ZnO) 2
1.1.2 Zinc Nitride (Zn3N2) 4
1.2 Motivation 5
1.3 Architecture of papers 5
Chapter Two - Basic theory 8
2.1 Zinc oxide defect mechanism 8
2.2 Defect mechanism of zinc nitride 14
2.3 Doping mode of zinc oxide converted by zinc nitride precursor 16
2.4 Role of nitrogen in the zinc oxide 17
2.5 Significance of each peak in the Raman analysis (ZnO/Zn3N2/ZnO:N) 18
2.6 PN device 19
2.6.1 PN device theory 19
2.6.2 Positive and negative bias voltage 20
Chapter Three - Experiment 24
3.1 Experimental apparatus 24
3.1.1 DC Magnetron Sputtering system 24
3.1.2 Rapid Thermal Annealing System 25
3.1.3 Hall Effect 25
3.1.4 Seebeck Effect 25
3.1.5 Raman Scattering Spectrometer 27
3.1.6 X-ray Photoelectron Spectroscopy 28
3.1.7 Scanning Electron Microscope 29
3.2 Experimental Process 30
3.2.1 The test piece clean 30
3.2.2 Zinc nitride thin films production 31
3.2.3 Zinc oxide oxidation by RTA 32
3.2.4 Production of zinc oxide PN diode 32
Chapter Four - Results and discussion 33
4.1 The first stage: Using RTA to find the temperature conversion of zinc oxide nitride 33
4.1.1 Process parameters of zinc nitride test sample 33
4.1.2 Hall measurement of Zn3N2 films after RTA annealing 34
4.1.3 Conductive patterns analysis of Zn3N2 films after RTA annealing 39
4.2 The second stage: the process change the environment to find the right process parameters zinc nitride 43
4.2.1 Preparation and Analysis of nitride precursor of zinc 43
4.2.2 Hall measurement of Zn3N2 with different processes environment 43
4.2.3 Raman analysis of Zn3N2 with different processes environment 46
4.2.4 XPS analysis of Zn3N2 with different processes environment 47
4.2.5 Effect of the pressure to Zn3N2 films 51
4.2.6 Effect of the gas flow to Zn3N2 films 55
4.2.7 Effect of the plasma power to Zn3N2 films 59
4.3 The third stage: the use of a variety of analytical instruments and components measuring thin film analysis 63
4.3.1 Comparison of different substrates in the process of ZnO:N electrical 63
4.3.2 RTA temperature effect of the PN device 67
4.3.3 ZnO:N films process analysis of different RTA oxidation temperature and oxidation time 72
4.3.4 Zinc nitride stable after annealing metric measurements 87
Chapter Five - Conclusion 94
References 96

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