臺灣博碩士論文加值系統

在1970年，由Bergveld所發明的離子感測場效電晶體，結合了化學感測薄膜和金屬-氧化物-半導體場效電晶體，多年來各種各樣的感測薄膜、讀取電路和校正方法相繼被提出。本論文提出一個新的溫度感測電路、具內建金參考電極的離子感測場效電晶體(ISFET)、及多路輸入與具補償電流機制的讀取電路。
原先實驗室團隊已證實了native aluminum oxide應用在pH濃度量測上，擁有良好的線性度與靈敏度，並提出了相關的讀取電路設計，經過實驗量測得到不錯的結果，但仍有可進一步改良的地方，例如降低輸出信號的準位以便能使用較少位元數來獲得較好的解析度。
首先，本論文提出了以正溫度係數的電壓來偏壓的具源極退化多晶矽電組之共源極放大器，實現一高線性度輸出電流的溫度感測器，並透過電流控制振盪器產生頻率隨溫度成高線性增加的脈波輸出。量測結果顯示，在0℃ ~ 125℃溫度範圍內，溫度感測器所量測到的線性度可達99.99%，溫度線性誤差在0.47℃ ~ −0.45℃。
接著，提出新的多路感測讀取電路及可調整輸出信號範圍的電流補償方法。跟實驗室先前提出的多路感測讀取電路相比，此電路具有較低功耗、較小晶片面積以及可補償製程變異造成的各路輸出間之誤差，讓各路輸出結果趨於一致。讀取電路輸出為數位脈波，脈波頻率與溫度或pH濃度的關係具有良好的線性度。
此外，本論文也設計內建金參考電極的ISFET元件結構，探討改變外部Ag/AgCl參考電極與內建Au參考電極偏壓時，輸出脈波頻率與pH值特性之靈敏度與線性度。量測結果顯示，在相同輸出頻率範圍之偏壓條件下，Ag/AgCl與Au參考電極操作時的靈敏度較大，靈敏度分別為−2.24 KHz/pH與−2.91 KHz/pH，線性度分別為99.18%與99.88%。

The ion-sensitive field effect transistor (ISFET), introduced first by Bergveld in 1970, combined the chemical-sensitive membrane with the metal-oxide-semiconductor field effect transistor. For the past many years, various sensing membrane, readout circuits and calibration methods have been presented. In this thesis, a novel temperature sensor, ISFET structures with built-in gold (Au) reference electrode, and several readout circuits with multiple inputs and an offset sub-circuit are presented.
Our laboratory has confirmed previously that the native aluminum oxide applies to the pH-value sensing and brings about the good linearity and sensitivity. In addition, the related read-out circuits have also been presented and the good experimental measurement results have also been exhibited. But the improvement of the read-out circuit, such as the reduction of output signal level for the better resolution by less bit number, is still needed.
At first, we utilize a common-source amplifier with a source-degeneration poly-crystalline silicon resistor, which gate is biased by a voltage with a positive temperature coefficient, to implement a temperature sensor with a highly linear output current. By using a current controlled oscillator, the pulse output, which frequency increases highly linearly with increasing temperature, is generated. For the temperature range from 0℃ to 125℃, the measured linearity is up to 99.99% at least and the related nonlinear temperature error range is from 0.47℃ to −0.45℃.
Then, we purpose to novel multi-sensor readout circuits and a current offset mechanism, which can adjust the output signal level. Compared with the readout circuit previously presented by our laboratory, the novel readout circuit architecture has a less power consumption and a smaller chip area, and can reduce the output error resulting from process variation, which causes difference between each output characteristics of the multi-sensor readout circuit. The offset mechanism can make these output characteristics nearly the same. The output of the readout circuit is digital pulses, which frequencies exhibit good linearity with environmental temperature and pH value.
In addition, the ISFET device structures with built-in gold reference were designed and the sensitivity and linearity of transfer characteristics of output pulse frequency against pH value under the bias by an external silver/silver chloride (Ag/AgCl) reference electrode and a built-in Au reference electrode were studied. The measurement results show that under the chosen biasing conditions for the approximate output frequencies with Ag/AgCl and Au reference electrodes, the sensitivities are -2.24 and -2.91 KHz/pH with linearity of 99.18% and 99.88%, respectively. The sensitivity of the sensor by using the built-in Au reference electrode is larger than by using an external Ag/AgCl electrode.

目錄

致謝 Ⅰ
中文摘要 Ⅱ
英文摘要 Ⅳ
目錄 Ⅶ
表目錄 Ⅸ
圖目錄 Ⅹ
緒論 1
研究背景 1
研究動機與目的 2
論文架構 4
ISFET工作原理與分析 5
2-1 生物感測器種類 5
2-2 離子感測場效電晶體(ISFET)工作原理 8
2-2.1 MOSFET特性 9
2-2.2 ISFET特性 10
2-2.3 EGFET特性 14
2-2.4 吸附鍵結模型與電雙層模型 15
2-3 參考電極 19
2-4 ISFET原件實驗與結果 22
第三章 溫度感測電路設計 26
3-1 電路架構介紹 26
3-1.1 溫度感測器 28
3-1.2 電流控制振盪器 37
3-2 整體溫度感測電路的模擬與量測 40
第四章 多路感測電路設計 53
4-1 電路架構介紹 55
4-1.1 先前之電路架構 55
4-1.2 帶差參考電路 59
4-1.3 多路運算放大器 64
4-2 多路感測電路的模擬與量測 67
4-2.1 具溫度多路感測電路 67
4-2.2 單一感測含補償電路 74
4-2.3 多路感測含補償電路 84
4-2.4 具溫度多路感測含補償電路 90
第五章 結論 94
第六章 參考文獻 97
表目錄

表1-1 不同材質之ISFET/EGFET感測薄膜特性比較 3
表3-1 pH緩衝溶液對溫度之變化 27
表3-2 SR正反器操作模式 38
表3-3 整理不同偏壓Vb下，模擬與量測0℃~125℃之特性 51
表4-1 BUN：Creatinine ranges and significance 55
表4-2 2-to-4 line decoder 66
表4-3 Postsim muti-OPA特性 67
表4-4 具溫度多路感測模擬與量測整理 73









圖目錄

圖 1-1 ENFET sensor system 1
圖 1-2 論文架構圖 4
圖 2-1 生物感測系統 8
圖 2-2 n-MOSFET元件示意圖 9
圖2-3 n-ISFET元件示意圖 11
圖 2-4 EGFET量測系統示意圖 15
圖 2-5 Site-Binding Model示意圖 16
圖 2-6 EIS架構之電荷密度與電位分佈 17
圖 2-7 Helmholtz電雙層模型與電位分佈 18
圖 2-8 Stern電雙層模型與電位分佈 19
圖 2-9 Ag/AgCl參考電極 21
圖 2-10 pseudo Ag/AgCl參考電極 22
圖 2-11 元件剖面圖與量測方法 23
圖 2-12 ISFET元件晶片照相圖 24
圖 2-13 pH値與相對應等效閘極電壓 25
圖 3-1 溶液、參考電極、臨界電壓所受溫度之影響圖 28
圖3-2 溫度感測器(未修正) 29
圖 3-3 V_G2對溫度模擬圖 31
圖 3-4 V_G2對溫度誤差模擬圖 31
圖 3-5 V_G5對溫度模擬圖 32
圖 3-6 V_G5對溫度誤差模擬圖 32
圖 3-7 定電壓之電阻對溫度電路圖 33
圖 3-8 電阻對溫度之變化模擬圖 34
圖 3-9 電阻對溫度之誤差模擬圖 34
圖 3-10 溫度感測器(修正後) 35
圖 3-11 電流對溫度模擬圖 36
圖 3-12 電流對溫度誤差模擬圖 36
圖 3-13 電流控制振盪器 37
圖3-14 電流控制振盪器模擬圖 39
圖3-15 電流控制振盪器layout圖 40
圖3-16 溫度感測脈波輸出電路圖 41
圖 3-17 頻率輸出對溫度模擬圖(TT) (Vb = 1V時) 43
圖 3-18 頻率對溫度誤差模擬圖(TT) (Vb = 1V時) 43
圖 3-19 頻率輸出對溫度模擬圖(FF) (Vb = 1V時) 44
圖 3-20 頻率對溫度誤差模擬圖(FF) (Vb = 1V時) 44
圖 3-21 頻率輸出對溫度模擬圖(SS) (Vb = 1V時) 45
圖 3-22 頻率對溫度誤差模擬圖(SS) (Vb = 1V時) 45
圖 3-23 頻率輸出對溫度模擬圖(TT) (Vb = 1.13V時) 46
圖 3-24 頻率對溫度誤差模擬圖(TT) (Vb = 1.13V時) 46
圖 3-25 頻率輸出對溫度模擬圖(TT) (Vb = 1.2V時) 47
圖 3-26 頻率對溫度誤差模擬圖(TT) (Vb = 1.2V時) 47
圖 3-27 頻率輸出對溫度量測圖 (Vb = 1V時) 48
圖3-28 頻率對溫度誤差量測圖 (Vb = 1V時) 48
圖3-29 頻率輸出對溫度量測圖 (Vb = 1.13V時) 49
圖 3-30 頻率對溫度誤差量測圖 (Vb = 1.13V時) 49
圖 3-31 頻率輸出對溫度量測圖 (Vb = 1.2V時) 50
圖3-32 頻率對溫度誤差量測圖 (Vb = 1.2V時) 50
圖3-33 晶片照相圖 52
圖 4-1 單輸入ISFET脈波輸出讀取電路圖 56
圖 4-2 量測之等效閘極電壓-頻率圖 57
圖 4-3 量測之pH值-等效閘極電壓圖 58
圖 4-4 muti-ISFET讀取電路圖 59
圖 4-5 帶差參考電路與溫度感測電路圖 60
圖 4-6 M4隨溫度變化之電流模擬圖 62
圖 4-7 M7隨溫度變化之電流模擬圖 63
圖 4-8 two-stage OPA 64
圖4-9 多路運算放大器電路圖 66
圖 4-10 具溫度多路感測電路圖 68
圖 4-11 輸入電壓(ipa)對頻率模擬圖 70
圖 4-12 溫度(ipb)對頻率模擬圖 70
圖 4-13 輸入電壓(ipc)對頻率模擬圖 71
圖 4-14 輸入電壓(ipa)對頻率量測圖 71
圖 4-15 溫度(ipb)對頻率量測圖 72
圖 4-16 輸入電壓(ipc)對頻率量測圖 72
圖 4-17 輸入電壓對頻率量測圖 73
圖 4-18 具溫度多路感測電路晶片照相圖 74
圖 4-19 單一感測含補償電路圖 75
圖 4-20 輸入電壓對頻率模擬圖(Voffset =2.4V) 76
圖 4-21 輸入電壓對頻率模擬圖(Voffset =2.55V) 77
圖 4-22 輸入電壓對頻率模擬圖(Voffset =2.7V) 77
圖 4-23 輸入電壓對頻率模擬圖 77
圖 4-24 輸入電壓對頻率量測圖(Voffset =2.4V) 78
圖 4-25 pH濃度對頻率量測圖(Voffset =2.4V) 78
圖 4-26 pH 7.02對頻率量測圖(Voffset =2.4V) 79
圖 4-27 pH量測架構圖 79
圖 4-28 pH濃度對頻率量測圖(Voffset =2.55V) 80
圖 4-29 pH濃度對頻率量測圖(Voffset =2.7V) 80
圖 4-30 pH濃度對頻率量測圖 80
圖 4-31 單一感測含補償電路晶片照相圖 82
圖 4-32 pH濃度對頻率量測圖(Voffset =2.4V；Vref =1.6V) 82
圖 4-33 pH濃度對頻率量測圖(Voffset =2.4V；Vref =1.75V) 83
圖 4-34 pH濃度對頻率量測圖(Voffset =2.55V；Vref =1.6V) 83
圖 4-35 pH濃度對頻率量測圖 83
圖 4-36 多路感測含補償電路圖 84
圖 4-37 輸入電壓對頻率量測圖(Voffset =2.7V) 85
圖 4-38 輸入電壓(ipa)對頻率量測圖(Voffset =2.55V) 86
圖 4-39 輸入電壓(ipa)對頻率量測圖(Voffset =2.67V) 86
圖 4-40 輸入電壓(ipa)對頻率量測圖(Voffset =2.7V) 86
圖4-41 輸入電壓(ipb)對頻率量測圖(Voffset =2.7V) 87
圖 4-42 輸入電壓(ipc)對頻率量測圖(Voffset =2.7V) 87
圖 4-43 輸入電壓對頻率量測圖(Voffset =2.7V) 87
圖 4-44 輸入電壓(ipa)對頻率量測圖(Voffset =2.7V) 88
圖 4-45 輸入電壓(ipb)對頻率量測圖(Voffset =2.55V) 89
圖 4-46 輸入電壓(ipc)對頻率量測圖(Voffset =2.67V) 89
圖 4-47 輸入電壓對頻率量測圖 89
圖 4-48 多路感測含補償電路晶片照相圖 90
圖 4-49 具溫度多路感測含補償電路圖 91
圖 4-50 輸入電壓(ipa)對頻率模擬圖(Voffset =2.4V) 92
圖 4-51 輸入電壓(ipb)對頻率模擬圖(Voffset =2.4V) 92
圖 4-52 溫度(ipc)對頻率模擬圖(Voffset =2.4V) 92
圖 4-53 輸入電壓(ipd)對頻率模擬圖(Voffset =2.4V) 93
圖 4-54 具溫度多路感測含補償電路layout圖 93

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