臺灣博碩士論文加值系統

如何利用碳化矽生長出graphene的方法一直以來都是很受重視及研究的議題，而製備的成果會因為生長的溫度、升溫速率、持溫時間、系統的真空度、石墨化的環境壓力、以及碳化矽經過氫氣過蝕刻之後的品質都會有影響。而本篇論文著重在如何找出最佳的氫氣蝕刻的參數和石墨化的參數，找出最佳的氫氣蝕刻參數可以將碳化矽表面的刻痕移除，並且蝕刻出奈米等級的台階。而在實驗的過程中我們發現了在碳化矽表面出現的特徵六邊型結構，這是由於邊緣的懸鍵所造成的結果。我們將會解釋懸鍵為何會造成這種現象的機制。而在石墨化的部分我們依照壓力的不同分成三個部分，一大氣壓氬氣環境下成長graphene、低壓氬氣環境下成長graphene,真空環境下成長graphene，而在不同的壓力環境下尋找最適合的成長溫度及持溫時間。最後我們將會討論系統環境在我們石墨化時所造成的影響，以及如何改善這個問題。

The method of growing grapheme by SiC has been studied for a long time. The production is affected by several factors, including growth temperature, rate of raising temperature, hold time, degree of vacuum, pressure of scheme during graphitization, and quality of SiC etched by hydrogen. In this thesis, we focus on finding the best parameters of hydrogen etching and graphitization so as to remove scratch on the surface of SiC and to produce steps in the order of nanometer. We find hexagonal structure on the surface of SiC because of the existence of dangling-bond at the edge of step in our experiment. We will explain the mechanism of that phenomenon resulting from dangling-bond and its physical meaning. We conduct three experiments for various parameters of argon pressures, including one atmosphere, low pressure, and vacuum, and we try to find the optimized growth temperature and hold time for the three cases. Finally, we will discuss the difficulties due to environment in the process of producing graphene and propose some possible approaches to improve them.

中文摘要 ii
英文摘要 iii
圖目錄 vi
第 1 章 Graphene 背景及研究動機...........................................................1
1.1 背景與研究動機 ...............................................................................1
1.1.1 Graphene 的特性........................................................................2
第 2 章 成長 Graphene 的方式及原理介紹.......................................6
2.1 Graphene 的製作方是及分類...........................................................6
2.1.1 bottom up approaches.................................................................7
2.1.2 Top down approaches................................................................10
2.2 在 6H-SiC(0001) 上生長 graphene步驟及動態模擬 .............................11
2.2.1 樣品前置作業...............................................................................12
2.2.2 6H-SiC(0001) 上的石墨化過程及動態模擬 ...................................19
2.3 樣品檢測所需要的儀器與原理 ..........................................................25
2.3.1 拉曼效應.....................................................................................25
2.3.2 掃描式電子顯微鏡Scanning electron microscope
(SEM)的功用及原理..............................................................................32
2.3.3 原子力顯微鏡AFM(Atomic Force Microscopy)的功用與目的.............36
第 3 章 Graphene 生長在 6H-SiC(0001) 實驗過程與結果討論.................... 37
3.1 氫氣蝕刻實驗..................................................................................37
3.1.1氫氣流量參數實驗..........................................................................39
3.1.2氫氣蝕刻溫度和時間參數的實驗......................................................43
3.2 一大氣壓氬氣環境下graphene在6H-SiC(0001)面上的生長....................53
3.2.1 石墨化的實驗及流程.....................................................................53
3.3 低壓氬氣環境下6H-SiC(0001)面上成長graphene.................................65
3.3.1低壓氬氣成長graphene實驗............................................................66
3.4 在低真空環境下的6H-SiC(0001)面上生長graphene..............................78
3.4.1 低真空環境下在6H-SiC(0001)上成長graphene實驗...........................78
第 4 章 總結與未來展望................................................................89
參考文獻 .............................................................................................89

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