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本文介紹在氮化鎵基板上製作歐姆接觸及成長氧化鋅奈米柱之成長研究。氮化鎵之歐姆接觸結構為：MZO/Ni/p-GaN；其中摻鉬之氧化鋅薄膜(MZO)為高濃度摻雜之透明導電膜，Ni為高功函數之金屬作為MZO與p-GaN間之緩衝層以促進歐姆接觸。本結構經快速熱退火750℃、30秒後，所獲得之特徵接觸電阻值為5.83×10-2 Ω- cm2。此歐姆接觸乃是由於形成NiO之化合物於MZO與p-GaN所致。並且此結構經熱退火後仍具有平滑之表面。關於氧化鋅奈米柱，我們將以水溶液法製備氧化鋅奈米柱，因水溶液法擁有低成本、簡單及低溫成長之優點。氧化鋅奈米柱分別成長在有氧化鋅薄膜晶種層以及無晶種層的氮化鎵基板上；而氧化鋅薄膜晶種層是以溶膠凝膠法浸塗於 P型氮化鎵基板上，並於快速退火爐 600℃處理獲得。成長氧化鋅奈米柱為硝酸鋅和環六亞乙甲基四胺之水溶液，摩爾濃度比為 1:1，分別調製三種不同濃度 0.01、0.05、及0.075M的混合水溶液，在95℃的環境下、3小時，成長氧化鋅奈米柱。結果顯示低濃度時所成長奈米柱直徑較大分佈較稀疏，高濃度時成長直徑較小較緊密，PL 分析有晶種層在 0.05 M 有最強之發光波長。

The ohmic contact and the growth of ZnO nanorods on a GaN substrate were studied in the research. The ohmic contact scheme of MZO/Ni/p-GaN was designed in the research. The Mo doped ZnO thin film (MZO) shows the characteristics of both high carrier concentrations and transparent electrode. The high work function metal, Ni, is a buffered layer between MZO and p-GaN for the formation of ohmicity. A low specific contact resistance of 5.83 × 10-2Ω-cm2 was obtained in the structure after it was rapid thermal annealed at 750 ℃ for 30 sec. The ohmicity of the contact scheme is due to the formation of NiO between MZO and p-GaN. The structure also shows a smooth surface morphology after the annealing. For the growth of ZnO nanorods, the aqueous solution method was used. The aqueous solution method shows the advantageous of low cost, simple process and low-temperature growth. The nanorods were grown on a p-GaN substrate with or without a seed layer of ZnO film. The ZnO seed layer was prepared by a sol-gel process and rapid thermal annealing (RTA) at 600℃ for 45 sec upon a p-GaN substrate. For the growth of ZnO nanorod, the molar ratio between zinc nitrate aqueous solution and hexamethylenetetramine was 1:1, and three different concentrations of the solutions,0.01, 0.05,and 0.075M were prepared for the growth of the nanorod. The growth temperature was constant at 95℃ for three hours. The nanorods both with lower density and larger diameters were obtained at the 0.01M sample, while both higher density and longer nanorods were obtained at the 0.07M sample. The 0.05M sample shows a higher PL response.

目 錄
頁數
中文摘要........................................................................... i
英文摘要........................................................................ iii
誌謝............................................................................. v
目錄........................................................................ vi
表目錄........................................................................ ix
圖目錄........................................................................ x
一、 緒論........................................................................ 1
1.1 前言........................................................................ 1
1.2 研究動機........................................................................ 6
二、 原理........................................................................ 7
2.1 金屬與半導體接觸理論........................................................................ 7
2.2 歐姆接觸........................................................................ 10
2.3 電流傳導之三種機制........................................................................ 12
2.4 傳輸線結構........................................................................ 17
2.5 溶膠凝膠法........................................................................ 19
三、 實驗儀器與步驟........................................................................ 20
3.1 實驗步驟........................................................................ 21
3.1.1 歐姆接觸........................................................................ 21
3.1.2 氧化鋅奈米柱..................................................................... 24
3.2 實驗儀器........................................................................ 32
3.2.1 場發射掃描式電子顯微鏡(SEM)........................................................................ 32
3.2.2 X光繞射分析儀(XRD)........................................................................ 34
3.2.3 歐傑電子能譜儀(Auger)........................................................................ 36
3.2.4 紫外光-可見光光譜儀(UV-VIS)........................................................................ 38
四、 結果與討論........................................................................ 39
4.1 歐姆接觸分析........................................................................ 39
4.1.1 特徵接觸電阻討論........................................................................ 39
4.1.2 Auger分析........................................................................ 48
4.1.3 XRD分析........................................................................ 50
4.1.4 SEM分析........................................................................ 54
4.1.5 UV-VIS分析........................................................................ 58
4.2 氧化鋅奈米柱........................................................................ 60
4.2.1 SEM分析........................................................................ 60
4.2.2 XRD分析........................................................................ 64
4.2.3 PL分析........................................................................ 66
五、 結論............................................................................ 68
六、 參考文獻........................................................................ 69















表目錄
表一 氧化鋅溶液配製藥品........................................................................ 26
















圖目錄
圖2-1 金屬與P型半導體歐姆接觸前之能帶圖........................................................................ 8
圖2-2 金屬與N型半導體歐姆接觸前之能帶圖........................................................................ 8
圖2-3 金屬與P型半導體歐姆接觸能帶圖........................................................................ 9
圖2-4 金屬與N型半導體歐姆接觸能帶圖........................................................................ 9
圖2-5 不同功函數金屬N型半導體歐姆接觸關係圖........................................................................ 11
圖2-6 不同功函數金屬P型半導體歐姆接觸關係圖........................................................................ 11
圖2-7 熱離子發射示意圖........................................................................ 13
圖2.8 熱離子場發射示意圖........................................................................ 15
圖2.9 場放射示意圖........................................................................ 16
圖2.10 傳輸線結構TLM(Transmission Line Model)........................................................................ 18
圖2.11 傳輸長度與RT....................................................................... 18
圖3-1 歐姆接觸實驗架構圖........................................................................ 21
圖3-2 TLM結構........................................................................ 23
圖3-3 基板準備與清洗方法....................................................................... 25
圖3-4 晶種層製作流程圖........................................................................ 27
圖3-5 RTA快速退火爐........................................................................ 29
圖3-6 氧化鋅奈米柱製作流程圖........................................................................ 31
圖3.7 場發射掃描式電子顯微鏡........................................................................ 33
圖3.8 XRD量測示意圖........................................................................ 35
圖3.9 中山大學歐傑電子能譜儀........................................................................ 37
圖3-10 崑山電機系紫外光-可見光光譜儀........................................................................ 38
圖4-1 Ni (1000Å)/p-GaN不同溫度退火之I-V特性分析圖........................................................................ 41
圖4-2 Ni 1000Å)/p-GaN不同溫度退火之特徵接觸電阻曲線圖........................................................................ 41
圖4-3 ZnO:Mo(1000Å)/p-GaN不同溫度退火之I-V特性分析圖........................................................................ 42
圖4-4 ZnO:Mo(1000Å)/Ni(50Å)/p-GaN不同溫度退火 I-V 特性分析圖............................................................... 43
圖4-5 ZnO:Mo(1000Å)/Ni(50Å)/p-GaN於不同溫度退火之特徵接觸電阻曲線圖........................................................................ 44
圖4-6 ZnO:Mo(1000Å)/Ni(150Å)/p-GaN不同溫度退火 I-V 特性分析圖........................................................................ 46
圖4-7 ZnO:Mo(1000Å)/Ni(150Å)不同溫度退火之特徵接觸電阻曲線圖.............................................................. 46
圖4-8 ZnO:Mo(1000Å)/Ni(150Å)/p-GaN未退火AES分析圖........................................................................ 49
圖4-9 ZnO:Mo(1000Å)/Ni(150Å)/p-GaN退火750℃AES分析圖........................................................................ 49
圖4-10 ZnO:Mo(1000Å)不同溫度退火XRD分析圖........................................................................ 51
圖4-11 ZnO:Mo/Ni(50Å)不同溫度退火XRD分析圖.................................................................................. 52
圖4-12 ZnO:Mo/Ni(150Å)不同溫度退火XRD分析圖........................................................................ 53
圖4-13 Ni(1000Å)不同溫度退火SEM分析圖........................................................................ 55
圖4-14 ZnO:Mo(1000Å)不同溫度退火SEM分析圖........................................................................ 56
圖4-15 ZnO:Mo/Ni(50Å)不同溫度退火SEM分析圖........................................................................ 56
圖4-16 ZnO:Mo/Ni(150Å)不同溫度退火SEM分析圖........................................................................ 57
圖4-17 ZnO:Mo/Ni(150Å)750度退火EDS分析圖........................................................................ 57
圖4-18 ZnO:Mo/Ni(50Å)不同溫度退火穿透率分析圖........................................................................ 59
圖4-19 ZnO:Mo/Ni(150Å)不同溫度退火穿透率分析圖........................................................................ 59
圖4-20 0.01M溶液成長無晶種層氧化鋅奈米柱表面及截面 SEM圖........................................................................ 61
圖4-21 0.05M 溶液成長無晶種層氧化鋅奈米柱表面及截面 SEM圖........................................................................ 61
圖4-22 0.075M 溶液成長無晶種層氧化鋅奈米柱表面及截面 SEM圖........................................................................ 61
圖4-23 0.01M 溶液成長有晶種層氧化鋅奈米柱表面及截面 SEM圖........................................................................ 63
圖4-24 0.05M 溶液成長有晶種層氧化鋅奈米柱表面及截面 SEM 圖........................................................................ 63
圖4-25 0.075M 溶液成長有晶種層氧化鋅奈米柱表面及截面 SEM圖........................................................................ 63
圖4-26 不同濃度混合水溶液，無晶種層成長氧化鋅奈米柱XRD分析圖譜....................................................................... 65
圖4-27 不同濃度混合水溶液，有晶種層成長氧化鋅奈米柱XRD分析圖譜....................................................................... 65
圖4-28 不同濃度混合水溶液，無晶種層成長氧化鋅奈米柱之PL光譜分析圖譜................................................................... 67
圖4-29 不同濃度混合水溶液，有晶種層成長氧化鋅奈米柱PL光譜分析圖譜..................................................................... 67

六、 參考文獻
[1] 陳振龍,黃文昌,蔡夢華,洪家宗,"廖振佑氧化鋅在矽基板上之成長與特性研究".
[2] S.Yoshida, S.Mwasawa, S.Gonda," Appl. Phys. Lett. , 42, 427 (1983).
[3] I.Askai, H.Amano, Y.Koide, K.Hiramatsu, N.Sawaki, J. Cryst. Growth, 98, 209(1989).
[4] S. Zhao,Y. Shi,H. Li,Q. He,Nuclear Instruments and Methods in Physics Research B 268 (2010) 1435–1439.
[5] L.S. Chuah , Z. Hassan, H. A. Hassan, Journal of Non-Crystalline Solids 356 (2010) 181–185.
[6] H.K. Cho, T. Hossain, J.W. Bae, I. Adesida, Solid-State Electronics 49 (2005) 774–778.
[7] Y.F. Lu, Z.Z. Ye , Y.J. Zeng, L.P. Zhu, J.Y. Huang, B.H. "Zhao. Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO". Solid-State Electronics 54 (2010) 732–735.
[8] B.R.Huang,C.H.Chou,W.C.Ke,Y.L.Chou,C.L.Tsai,M.c.Wu." Effects of hydrogen treatment on ohmic contacts to p-type GaN films",Applied Surface Science 257 (2011) 7490–7493.
[9] N. Ye, C. C. Chen, Optical Materials 34 (2012) 753–756.
[10] 王貞雲,王錫福,曾俊元."低溫水溶液法合成氧化鋅奈米結構之研究".
[11] K. Prabakar , Heeje Kim. Thin Solid Films 518 (2010) e136–e138.
[12] W.L. Lu, P.K.Hung, C.I.Hung , C.H. Yeh, M.P.Houng, "Improved optical transmittance of Al-doped ZnO thin films by use of ZnO nanorods", Materials Chemistry and Physics 130 (2011) 619–623.
[13] S.J.Kim, H.H. Kim, J.B. Kwon, J.G.Lee, B.H.O, S.G.Lee,E.H.Lee, S.G. Park,"Novel fabrication of various size ZnO nanorods using hydrothermal method".Microelectronic Engineering 87 (2010) 1534–1536.
[14] G.K.Reeves and H.B.Harrison, Electron.Device Letters, EDL-3, 111,(1982).
[15] 蔡勢欣,"金矽鈀在N型磷化銦歐姆接觸研究",崑山科技大學光電工程研究所碩士論文,(2008).
[16] E. H. Rhodetick and R.H.Willian, Metal-Semiconductor Contact, 2 nd ed. Oxford Science Publiscations, 12(1988).
[17] Simon.S.Cohen,Metal-SemiconductorContacts And Device,Academic Press, 9-11(1986).
[18] S.M. Sze, Physic of Semiconductor Devices, (2007) 153.
[19] G. Ivey, P. Jian, R. Bruce, Thin Solid Films,190 (1990) 217-226.
[20] G. K. Reeves, and H.B. Harrison, Electron. Device Letters, EDL-3, 111,(1982).
[21] J. S. Foresi and T. D. Moustakas, Appl. Phys. Lett., 62, 2859 (1993).
[22] 陳振龍,"氧化鋅薄膜備製及其二極體應用",崑山科技大學光電工程研究所碩士論文,(2011).
[23] 鍾松畛, "P 型氮化鎵金屬歐姆接觸特性之研究",國立成功大學材料科學及工程研究所碩士論文,(2004).
[24] 林麗娟,"X光繞射原理及應用",工業材料86期1994.
[25] 林政頤, 低溫下濺鍍成長 AZO/Cu/AZO 薄膜及氫電漿處理之特性研究, 崑山科技大學電機工程研究所碩士論文,(2012).
[26] 莊鑫堅, "P型電極氧化鎳薄膜之製備與其電性及光性之探討",國立成功大學材料科學及工程學系碩士論文,(2003).
[27] F. Li , Z. Li, and F. J. Jin, Structural and luminescent properties of ZnO nanorods prepared from aqueous solution, Mater. Lett., 61 1876–1880 (2007).
[28] 莊佑豪, 水溶液法製備氧化鋅薄膜及其光學特性研究, 大同大學材料工程研究所碩士論文,(2009).