臺灣博碩士論文加值系統

本論文作為雷射輔助低溫蝕刻方法在砷化鎵(GaAs)材料應用之外的延伸，將蝕刻材料推廣到目前寬能隙(>3eV)半導體材料，特別是針對目前溼蝕刻方法上一直無法獲得有效突破的ｐ型氮化鎵(p-GaN)蝕刻問題，以及最近發展出來氮化矽碳(SiCN)材料。可用來製作藍綠色發光元件的氮化鎵與氮化矽碳其先天上所具有穩定的材料特性(見表一，第一頁)，使得傳統半導體的濕蝕刻技術無法獲得高的蝕刻速率與解析度，而在目前傳統的乾式蝕刻技術上，又無可避免的會有因電漿離子轟擊的問題造成蝕刻材料表面破壞使得材料的機械、電學、光學特性劣化而影響元件性能；有鑑於此，一種同時具有高解析度(Resolution)、非等向性(Anisotropy)、低製程損壞的乾蝕刻技術亦發顯得重要，回顧雷射輔助低溫蝕刻方法已在砷化鎵材料[8]、本質氮化鎵(Intrinsic-GaN) [C1]、n型氮化鎵(n-GaN) [C2]應用上所獲得的成果，此論文提出雷射輔助低溫蝕刻方法在ｐ型氮化鎵(p-GaN)與氮化矽碳材料上的蝕刻應用。

As a extension of laser-assisted cryoetching\footnote{Through the thesis, we concisely use the term ``PUVLACE'', stands for Pulsed UV Laser Assisted Cryogenic Etching to represent the damage-free, high resolution, and high anisotropic dry etching technique utilized by pulsed UV laser at low temperature.} on GaAs\cite{ShihD1994}, GaN (intrinsic) [C1] and n-GaN[C2], the thesis reports the application of this low surface damage tching technique for the etching of GaN and SiCN film which are potentially important material for blue light device and dvanced opto-electronic devices because of its high band gap and high mobility. Since GaN and SiCN are chemically inert(refers to table \ref(tbl:BandGapBondEnergyOfGaAsAlNGaNInNSiCN}, page ageref{tbl:BandGapBondEnergyOfGaAsAlNGaNInNSiCN}) to the surface chemical reaction thus make such material resist to most of conventional etching technique(wet and dry). Previous study showed the no etched surface damage of GaAs and its related
semiconductors by UV(Ultra Violet) laser assisted cryogenic etching\cite{ShihD1994}. In this thesis, we present the etching of p-GaN and SiCN film by the UV pulse laser assisted cryogenic etching. We shows the etching result of the PUVLACE on p-GaN, SiCN and the discussion on the detailed of using this technique in achieving optimized etching condition.