臺灣博碩士論文加值系統

利用電漿化學氣相沈積法所成長的絕緣層，如氮化矽及氧化矽等，已經被廣泛的應用在半導體製程裡面了。例如光電元件的絕緣保護層、製程中必須的遮罩以及 金屬-絕緣體-半導體 場效電晶體 (MISFET) 的閘絕緣體等。其中由於三-五族半導體有高的電子移動率及大的飽和飄移速度的特性，所以很適合應用在高速元件的製作上。而這兩種絕緣層各有其優缺點，三-五族半導體亦有以上之優點，因此三-五族半導體的場效電晶體可適用於高速電路上，所以本論文探討此兩種絕緣層在In0.53Ga0.47As介面特性之研究，若有好的介面特性，便可以作成MISFET。
本論文由成長電漿化學氣相沈積法的絕緣層開始，先探討其成長的機制，再利用實驗所得之參數尋找出最適合的成長條件(氫鍵結數要少)，進一步去分析其絕緣層的組成、化學鍵結等材料特性。之後，用最適合的成長條件成長在In0.53Ga0.47As 上並做不同之退火處理，然後做成 金屬-絕緣體-半導體 電容的結構去作電性之分析。我們可以發現到氮化矽層的最佳退火溫度大約在450℃，而退火處理似乎不會改善氧化矽的品質，而且交互擴散(interdiffusion)的現象在氧化矽的情形會比氮化矽來得嚴重，這樣的現象可以由微分電容和二次離子質譜儀(SIMS)量測得到驗證。由微分並聯電導的曲線，也可以知道金屬-絕緣體-半導體電容的能量損失是由介面能階密度來主宰。

Dielectric films of SiOx and SiNx by plasma enchanced chemical vapor deposition (PECVD) have been widely used in the fabrication of microelectronic devices. They have been used for insulation between conducting layers, for diffusion and ion implantation masks, for capping doped films to prevent the loss of dopants, and for passivation to protect devices from impurities, moisture, and scratches. Besides, dielectric films have been deposited on Ⅲ-Ⅴ compound semiconductor as a promising gate insulator for MISFETs. Characteristics of Ⅲ-Ⅴ compound semiconductor have high electron mobility and large drift saturation velocity, so development of suitable insulator for MISFETs has been a pursue goal.
Material characterizations were investigated by depositing dielectric films on Si-substrate. Electrical characterizations in metal-insulator-semiconductor (MIS) structure were also investigated. In this study, we treated our samples with furnace annealing (FA) or rapid thermal annealing (RTA) process at different temperatures to find the optimum condition for our samples. It can be noted that FA or RTA process can improve the quality of SiNx/InGaAs, but can’t improve that of SiOx/InGaAs. This is suggested to be that the phenomenon of inter-diffusion after FA or RTA process easily occurs in SiOx/InGaAs samples compared to SiNx/InGaAs samples. We can verify the phenomenon by the measurement of SIMS.

Chinese Abstracti
English Abstractii
Acknowledgementsiv
Contentsv
Table Captionsvii
Figure Captionsviii
Chapter 1 Introduction1
1-1 Properties of PECVD Dielectric Films1
1-2 Silicon Dioxide and Silicon Nitride Films4
1-3 MISFET4
1-4 Flowcharts of Our Experiment5
Chapter 2 Physics of MIS Capacitor7
2-1 MIS Structure7
2-1.1 Operation of MIS diode in Equilibrium Condition7
2-1.2 Simulation of Surface Charge Density11
2-2 The MIS Capacitance12
2-2.1 Majority and Minority Carrier Response Time13
2-2.2 Capacitance Curve of MIS Capacitor14
2-3 Simulation of Capacitance at Low Frequency16
Chapter 3 Experimental Procedures18
3-1 Wafer Preparation18
3-1.1 SiOx (or SiNx)/InGaAs/InP Structure18
3-1.2 SiOx (or SiNx)/Si Structure19
3-2 MIS Capacitor Fabricating Process19
3-3 Instruments of the Experiment23
3-3.1 Ellipsometer23
3-3.2 FTIR23
3-3.3 SEM23
3-3.4 Hp 4155A23
3-3.5 Hp 4280A23
3-3.6 Furnace25
3-3.7 PECVD25
3-3.8 RBS29
3-3.9 SIMS30
Chapter 4 Results and Discussions31
4-1 Material Characterizations of PECVD Dielectric Films31
4-1.1 Gas Sources of the Dielectric Films31
4-1.2 Growth mechanism of PECVD Dielectric Films32
4-1.3 Hydrogen Bonds of the Dielectric Films35
4-1.4 Constituents of the Dielectric Films39
4-1.5 Pin-hole Density of the Dielectric Films40
4-2 Electrical Characterizations of PECVD Dielectric Films41
4-2.1 SiNX/InGaAs-substrate with Different RTA Conditions42
4-2.2 SiNX/InGaAs-substrate with Different FA Conditions57
4-2.3 SiOX/InGaAs-substrate with Different FA Conditions62
Chapter 5 Conclusions67

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