臺灣博碩士論文加值系統

我們成功地使用快速加熱氧氣, 氮氣, 及二氧化氮技術去改進用低溫(-20
?C) 電子迴旋共振技術所成長的薄氧化層.其中以用二氧化氮去快速加熱
處理, 由於矽氮鍵結取代在基板矽/氧化層的弱鍵,使得氧化層得到較好的
電性改進. 崩潰電場(超過 12.5 MV/cm), 介面陷阱電荷密度(1.95e10
cm-2 eV-1) 和漏電等特性和爐管成長的氧化層比較大致相等. 傅利葉轉
換紅外線光譜分析, 蝕刻率分析等使我們更加確定這快速退火處理的確大
幅提高氧化層品質. 氧化層厚度對成長時間可以準確地由 Deal-Grove 公
式所模擬. 另外, 藉由快速加熱法所成長的超薄氧化層(40~O), 這電荷注
入引發的氧化層漏電, 準崩潰特性, 及最大注入電荷對閘極電壓極性相
關, 亦在本文研究的範圍之內.

In this thesis,we successfully utilize the rapid thermal O2,
N2, and N2O annealing technology to improve the quality of the
ultra-low temperature (-20?C) electron cyclotron resonance
(ECR) thin oxide. Among the three kinds of annealing
technology, the N2O annealed oxide is found to have the better
electrical characteristics due to the Si-N bonds in place of
the weaker bonds at the Si/SiO2 interface. The breakdwon field(
over 12.5 MV/cm), Dit (1.95e10cm-2eV-1) and leakage current are
comparable to the furnace oxide. The material analyses,
including the Fourier transform infrared spectrum analysis
(FTIR), etch rate test, assure that the low thermal budget
annealing indeed greatly improves the oxide quality. The
relationship between the oxide thickness and growth time is
well described by the Deal-Grove model. By way of the rapid
thermal 40~O oxide, the characteristics of the ultra-thin
oxide, such as the stress induced leakage current (SILC), quasi-
breakdown phenomenon, the polarity dependence of the Qbd have
been studied.