臺灣博碩士論文加值系統

本研究是在超高真空環境下將釸蒸鍍在銅(111)表面上，並用歐傑電子能譜儀觀察此介面系統的成長行為和熱退火後的合金現象，以及歐傑電子能譜峰值的偏移。在成長過程中，隨著蒸鍍矽的時間增加，發現Si 92 eV (L3M23M45)及Cu 920 eV (L3M45M45)歐傑電子能譜峰值位置都有往低能量方向偏移的趨勢，原因是因為矽的電子親和力大於銅的電子親和力(EASi=1.39＞EACu=1.23)，造成介面處的電子轉移進而產生偏移現象。由此偏移的現象我們可以得知矽/銅介面在起初成長時會有強烈的化合反應，矽與銅在介面變化處形成交互擴散現象(interdiffusion)，造成一個粗糙介面。針對Si/Cu(111)進行加熱退火處理，發現當退火溫度在400到425 K時矽往銅內部擴散的現象最為明顯。進一步分析歐傑電子能譜峰值偏移，發現此時Si L3M23M45和Cu L3M45M45歐傑電子能譜峰值位置會往高能量的方向偏移；比較成長與退火的歐傑電子能譜峰值偏移的情形，發現成長時，歐傑電子能譜峰值偏移較在高溫退火時大，原因在於表面層矽濃度之不同。另外我們還發現在Si超薄膜成長到Cu(111)表面時，歐傑電子能譜圖的面積(Area)和計數值(Count)都有變大的趨勢，原因是因為當蒸鍍Si在Cu(111)面上，由於Si較不易產生X光激發，相對的所激發的電子就比較多，所以面積和計數值會變大。

Growth and annealing effects of Si/Cu(111) ultrathin films have been studied using Auger electron spectroscopy under ultrahigh vacuum environment. As deposited at ambient temperature, the kinetic energy of Si L3M23M23 and Cu L3M45M45 Auger electrons shifts to a lower value. Systematic investigations on the annealing effects of Si/Cu(111) system show that the interdiffusion occurs at 425 K and is nearly complete at temperatures above 475 K. A restoration of the Auger peak positions upon annealing treatment was observed. These phenomena could be explained by the electric charge transfer between Si and Cu atoms at the interface since their electron affinities (EASi=1.39＞EACu=1.23) are different. In additional, the area and counts of Auger electron spectra increase as the Si coverage increases. A model based on the increasing x-ray yield upon increasing atomic number is proposed. The x-ray excitation in Si is much more than that in Cu and therefore electron excitation in Si is relatively larger. This effect causes the increase of area and counts of Auger electron spectra after deposition of Si layers.

Chapter 1 研究動機與背景識..........................1
Chapter 2 實驗、儀器及工作原理.....................4
2-1 超高真空（ultrahigh vacuum，UHV）系統..........4
2-1-1 需要超高真空系統的理由....................4
2-1-2 實驗裝置..................................7
2-1-3 恢復超高真空的程序.......................15
2-2 清潔樣品的方法、步驟與儀器...................20
2-2-1 離子濺射清潔樣品表面.....................20
2-2-2 樣品退火與升降溫系統.....................22
2-3 傑電子能譜儀（Auger electron spectroscopy
; AES）......................................26
2-3-1 歐傑效應與電子能譜.......................26
2-3-2 電子能譜的分析...........................30
2-3-3 歐傑電子能譜術的應用.....................32
2-4 低能量電子繞射（low—energy electron
diffraction； LEED）.............................38
2-4-1 表面晶格結構的表示法.....................38
2-4-2 反商晶格與電子繞射.......................40
2-4-3 低能量電子繞射的工作方式及原理...........43
2-4-4 低能量電子繞射所傳達的表面訊息...........45
2-4-5 低能量電子繞射儀的種類...................49
Chapter 3合金效應...................................50
3-1電負度........................................50
3-2電子親和力....................................52
Chapter 4實驗結果與討論...........................56
4-1 Si/Cu(111)之薄膜成長及熱退火行為.............56
4-1-1 7.5原子層厚度之Si/Cu(111)成長及退火後的表面行為的探討............................58
4-1-2 1.5、2、3.3和5.5原子層厚度之Si/Cu(111)成長及退火後的表面行為的探討....................68
4-2 Si/Cu(111)歐傑電子能量峰值偏移和面積、計數值的總整理......................................83
Chapter 5 結論.......................................89
參考資料...............................................91

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