文獻
01‧”半導體製程技術導論”，Hong Xiao著，羅正中、張鼎張譯，台灣培生教育 出版股份有限公司
02‧”VLSI製造技術”，莊達仁編著，高立圖書有限公司
03‧英代爾公司的網頁：http://www.intel.com/research/silicon/mooreslaw.htm
04‧”Molecilar-Scale Electronics”，by Mark A. Reed，Proceeding Of the IEEE，Vol.87，No.4，April 1999
05‧”Machanism of Electron Conduction In Self-Assembled Alkanethiol Monolayer Devices”，by Wenyoung Wang，Takhee Lee，and Mark A. Reed，Phys. Rev. B (2003)
06 ‧"Nanoscale metal/self-assembled monolayer/metal heterostructures"，by C. Zhou, M.R. Deshpande， M.A. Reed， and J.M. Tour，Applied Physics Letters 71, 611 (1997)
07‧"Observation of a Large On-Off Ratio and Negative Differential Resistance in an Electronic Molecular Switch"，by J. Chen， M. A. Reed， A. M. Rawlett，and J. M. Tour，Science, 286, 1550 (1999)
08‧"Molecular Electronic Devices"，by J. Chen，T. Lee， J. Su，W. Wang， M.A. Reed， A.M. Rawlett， M. Kozaki， Y. Yao， R. C. Jagessar，S. M. Dirk，D. W. Price，J. M. Tour， D.S. Grubisha，and D. W. Bennett，in "Molecular Nanoelectronics" edited by M.A. Reed and Takhee Lee, American Scientific Publishers
09‧"Molecular Electronic Devices"，by J. Chen， T. Lee， J. Su，W. Wang，and M.A. Reed， in "Encyclopedia of Nanoscience and Nanotechnology" edited by H.S. Nalwa, American Scientific Publishers
10‧”Point-contact spectroscopy in metals”，by A. G. M. Jansen，A. P. van Gelder，and P. Wyder，Journal Physics C：Solid State Physics，13，6073-6118
11‧”Point-contact spectroscopy”，by A. M. Duif，A. G. M. Jansen，and P. Wyder，Journal Physics：Condensed Matter，1，3157-3189
12‧“Fabrication of thin-film metal nanobridges”，by K. S. Ralls and R. A. Buhrman，Applied Physical Letter，55，2459-2461
13‧”Fabrication of metallic nanoconstrications”，by P. A. M. Holweg，J. Caro，A. H. Verbruggen，and S. Radelaar，Microelectronic Engineering，11，27-30
14‧”Metallic point contacts formed by physical vapor deposition and chemical vapor deposition：microscopy study and point-contact spectroscopy”，by N. N. Gribov，J. Caro，T. G. M. Qosterlaken，and S. Radelaar
15‧”淺談微影蝕刻技術”，陳啟東著，物理雙月刊，二十一卷四期16‧”半導體器件：物理與工藝”，施敏著，王陽元譯，科學出版社
17‧”Anisotropic Etching of Crystalline Silicon in Alkaline Solutions I. Orientation Dependence and Behavior of Passivation Layers”，by H. Seidel， L. Csepregi， A. Heuberger，and H. Baumgartel，Journal of Electrochemical Society，137，3612-3626
18‧“固體物理學”，黃昆原著，韓汝琦改編，高等教育出版社
19‧”Wet Etching and Bulk Micromachining Fundamentals of Micromachining”，by Bruce K. Gale，http://www.eng.utah.edu/
20‧http://ceiba.cc.ntu.edu.tw/522U4510/ch3-2-1.htm
21‧http://www.jeol.com/sem/jsm_6500f.html
22‧”The Use of the Scanning Electron Microscope”，by J. W. S. Hearle，J. T. Sparrow，and P. M. Cross，Pergamon Press Ltd
23‧碩士論文”奈米碳管成長的起始階段”， 張德智著，清華大學24‧http://www.union.co.jp/english/product-e/p-semi-e/ema-e.html
25‧http://www.oxinst.com/PLMPSC15.htm
26‧http://www.keithley.ru/
27‧”Wet-Chemical Etching and Cleaning of Silicon”，by Michael H. Jones，and Stephen H. Jones，http://www.virginiasemi.com/
28‧”Silicon wet orientation-dependent（anisotropic）etch rates”，by K. R. Williams，Properties of Crystalline Silicon，London，1999
29‧”Anisotropic Etching of Silicon on {111} and Near {111} Planes”，by Songsheng Tan，Robert Boudreau，and Michael L. Reed，Sensors and Materials，Vol.13，No.5，303-313
30‧”Wet Etching of Silicon”，by Anthony Ferguson，and Ming Liu，http://www.enee.umd.edu/class/enee416.S2002/report4.pdf
31‧彈道運輸方式：When the impurities of a microstructure are negligible and the electrons are only scattered by the walls of the cavity，we enter than the ballistic regime.