臺灣博碩士論文加值系統

本研究利用射頻磁控共濺鍍系統，分別利用ZnO、Ag靶材，製程共濺鍍p型薄膜，再經由熱處理活化未摻雜ZnO薄膜為底層，在改變中間活化層加入阻障層AlN-ZnO薄膜雙異質結構提升薄膜電子電洞侷限能力，以及在加入氮化鋁侷限層來增加電子侷限能力使發光效益改變，利用霍爾量測電特性及光激發螢光光譜圖了解薄膜堆疊特性，電特性可發現銀摻雜氧化鋅呈現p型導電型態，中間活化層薄膜雙異質結構及未摻雜氧化鋅薄膜呈現良好的n型導電型態，光激發螢光光譜圖發現中間層AlN-ZnO薄膜雙異質結構有效抑制ZnO中的氧缺位使短波長部分提升發光強度，加入氮化鋁侷限層可發現短波長發光強度明顯增強。本研究在藍寶石基板中製成p-ZnO/n-ZnO、p-ZnO/DH/n-ZnO及p-ZnO/AlN/DH/n-ZnO同質接面二極體，從電流-電壓特性發現，中間AlN-ZnO薄膜雙異質結構，導通電壓為0.68V時，電流比值為2.21，則再製程氮化鋁侷限層，導通電壓上升為1.15V，電流比值為5.59，兩者有良好的整流特性。進一步探討以不同底層薄膜n型氮化鎵及p型氮化鎵薄膜為異質結構之研究，由n型氮化鎵薄膜為結構底層製成p-ZnO/n -GaN、p-ZnO/DH/ n-GaN及p-ZnO/AlN/DH/ n-GaN異質接面二極體，底層n型氮化鎵晶體結構及電特性優於n型氧化鋅，從電流-電壓特性發現，有呈現更加良好的整流特性，探討由p型氮化鎵薄膜為結構底層製成p-ZnO/p -GaN、p-ZnO/DH/ p-GaN及p-ZnO/AlN/DH/ p-GaN異質接面二極體，從電激發發光光譜圖及能帶圖結構發現，電壓下p-GaN薄膜能夠提供少數電洞增加電子電洞復合機會產生發光，而加入氮化鋁侷限層阻擋電子侷限於中間層活化層中，使單光性發光提升。

In study,Ag dope ZnO films were prepared by RF magnetron co-sputtering system by p-type film, the heat treatment undoped ZnO film is activated, Changing the intermediate activation layer, adding barrier layer AlN-ZnO film double hetero-junction, improving the electronic hole limitation ability of the film, and adding aluminum nitride boundary layer to increase the ability of electronic limitation, so that the benefit of luminescence will be changed, is hall measurement of electrical properties and photoluminescence spectra to understand film stacking characteristics, the electrical characteristics can be found that the Ag dopede ZnO has a p-type conductive pattern. the double hetero-junction and the undoped ZnO film in the intermediate layer film show n-type conductive pattern, the photoluminescence spectra show that middle layer AlN-ZnO film double hetero-junction of the middle layer effectively inhibits the oxygen vacancy in the ZnO and increases the intensity of the luminescence in the short wavelength part, and the intensity of the short wavelength luminescence is obviously enhanced by the addition of the aluminum nitride layer.This study is made p-ZnO/n-ZnO、p-ZnO/DH/n-ZnO and p-ZnO/AlN/DH/n-ZnO homo- junction diode in sapphire substrate, In current-voltage characteristics, in middle layer AlN-ZnO film double hetero-junction, when the voltage is positive or negative 0.68V ,the current ratio is about 2.21, or confined aluminum nitride layer, when the voltage is positive or negative 1.15V ,the current ratio is about 5.59, Both have rectifying characteristics. Further study is made on the different bottom film n-GaN and p-GaN thin films as heterostructures, the n-GaN film is made for the structure bottom p-ZnO/n -GaN、p-ZnO/DH/ n-GaN and p-ZnO/AlN/DH/ n-GaN hetero-junction diode, it n-Gan crystal structure and electrical characteristics better than those of n-ZnO, In current-voltage characteristics, Both have very rectifying characteristics, study the p-Gan film is made for the structure bottom p-ZnO/p -GaN、p-ZnO/DH/ p-GaN and p-ZnO/AlN/DH/ p-GaN hetero-junction diode, from the electrical excitation spectrum and the band diagram, under voltage, the p-GaN film can provide a few holes to increase the electron hole recombination chance to produce luminescence, the addition of aluminum nitride confining layer prevents electrons from being confined to the activation layer of the intermediate layer, which enhances the single photoluminescence.

摘要......i
Abstract......ii
誌謝......iv
目錄......v
表目錄......viii
圖目錄......ix
第一章 緒論......1
1-1 前言......1
1-2 文獻回顧......1
1-2-1 銀摻雜氧化鋅薄膜......1
1-2-2氧化鋅雙異質結構及加入氮化鋁侷限層......2
1-2-3異質結構發光二極體......2
1-3 研究動機與目的......3
第二章 理論基礎......6
2-1 電漿理論......6
2-2 射頻磁控濺鍍原理......7
2-3 薄膜成核理論......7
2-4 薄膜材料特性簡介......7
2-4-1 氧化鋅薄膜......8
2-4-2 金屬薄膜......8
2-4-3 氧化銦錫薄膜......8
2-4-4 氮化鋁薄膜......9
2-5 金屬與半導體接觸理論......9
2-5-1 歐姆接觸理論......10
2-5-2 傳輸線模型【55-57】......10
第三章 實驗製程方法與步驟......20
3-1共濺鍍薄膜製作流程......20
3-1-1 基板清洗......20
3-1-2 濺鍍系統【56】......20
3-1-3鍍膜製作流程......21
3-2 傳輸線模型製程流程......21
3-3 二極體製程流程......22
3-3-1未摻雜氧化鋅為底層的二極體同質結構......22
3-3-2 n型氮化鎵為底層的二極體異質結構......23
3-3-3 p型氮化鎵為底層的二極體異質結構......24
3-4 實驗儀器量測原理......25
3-4-1 表面輪廓分析儀......25
3-4-2 霍爾量測系統......25
3-4-3 光學穿透率量測......26
3-4-4 光激發螢光量測【57】【58】......26
3-4-5 半導體參數分析儀......26
3-4-6 拉曼光譜儀(Raman System)......27
3-4-7 低掠角X光繞射儀(Grazing incident X-ray diffraction pattern；GIXRD)......27
4-1 p型氧化鋅沉積於n型氧化鋅同質接面二極體特性分析......37
4-1-1 p型氧化鋅於沉積於n型氧化鋅薄膜電特性分析......37
4-1-2 p型氧化鋅於沉積於n型氧化鋅薄膜結晶性分析......38
4-1-3 p型氧化鋅沉積於n型氧化鋅薄膜光學特性分析......39
4-1-4 p型氧化鋅沉積於n型氧化鋅薄膜同質二極體結構元件分析......40
4-2 p型氧化鋅沉積於n型氮化鎵異質接面二極體特性分析......43
4-2-1 p型氧化鋅沉積於n型氮化鎵薄膜光電特性分析......43
4-2-2 p型氧化鋅沉積於n型氮化鎵薄膜異質二極體結構元件分析......44
4-3 p型氧化鋅沉積於p型氮化鎵異質接面二極體特性分析......47
4-3-1 p型氧化鋅沉積於p型氮化鎵薄膜光電特性分析......47
4-3-2 p型氧化鋅沉積於p型氮化鎵薄膜異質二極體結構元件分析......48
第五章 結論與未來工作......87
參考文獻......89
Extended Abstract......96

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