臺灣博碩士論文加值系統

半導體的生產技術日新月異，金氧半場效電晶體已經從100微米進步到20奈米或更小的世代，半導體元件的微縮除了增加了積體電路元件密度進而降低製造成本外，主要還是在提昇元件速度與減低消耗功率。FinFET是一種新的互補式金氧半導體(CMOS)電晶體，閘長已可小於25nm，未來可進一步縮小至9nm，而FinFET這種新型的多重閘級電晶體，功耗與效能遠超傳統的平面型電晶體。傳統的電晶體結構中，只能在閘門的一側控制斷開和接通以控制電流通過閘門。而FinFET把閘門做成魚鰭這種（3D）的形狀，並且可以在兩側控制電流的斷開與接通，比起平面電晶體，能更妥善地控制電流，同時降低漏電和動態功率。FINFET採用多晶矽閘極，當閘極偏壓超過臨界電壓(Threshold Voltage)的偏壓時，加上的閘極電壓會迫使通道成為空乏區，如此則有效地防止漏電流。本論文中，我們模擬了的電流-電壓特性曲線來做比較與分析，和一些重大的物理量，如臨界電壓，作其定性與定量的探討。
此外我們使用8051模擬了自動化控制系統，我們試圖建立一個感測器來感測二氧化碳的濃度，並將該模擬的信號轉入ADC0804轉換成數位訊號，當數位訊號達到要求時，系統會發出警告。這樣的設置可以使環境免受高濃度二氧化碳的能力。

Semiconductor industry is overwhelmingly successful and progressive, especially from 0.1 micron devices to 20 nanometers devices. The scale decreasing of transistors results in the density of transistors such that it does not only lower the production cost but also reduce the consuming power. For channel length less than 40nm, FinFET devices become the mainstream because of even better controllability. FinFET uses 3-dimensional fin-like channel with the aspect-ratio of the fin as high as 50:1. It successfully eliminates high leakage current at such a short channel length by applying a bias to the gate and then depleting the whole fin standing on the insulator (silicon dioxide, known as silicon on insulator or SOI). One thus measures the fabricated FinFET devices, analyzes current-voltage curves, and deliberately fits the curves to find the underlying physical quantities.
Furthermore, automatic control system using 8051 CPU is put to simulating. One tries built up a carbon dioxide sensor to sense the concentration of carbon dioxide, in which the analog signal is sent to the ADC0804 and converted into the digital signal. As the criteria of the digital signal are reached, the system sends out the power to protect the circumstances from being with such a high concentration of carbon dioxide.

摘 要 I
Abstract II
目 錄 IV
表目錄 VI
圖目錄 VII
第 1 章 概論 1
1.1 研究動機與方法 1
第 2 章 元件物理 3
2.1 能帶(energy band)與能隙(energy gap) 3
2.2 P-N接面的基本結構與特性 4
2.3 內建電位 7
2.4 電場分析與空乏區寬度 9
2.5 逆向偏壓 15
2.6 電流密度 17
2.7 理想的MOS元件 19
2.8 MOSFET基本結構與操作特性 28
2.9 基本操作特性 31
2.10 (ID)-V(VDS)方程式推導 34
2.11 短通道效應 37
2.11.1 通道長度調變效應 37
第 3 章 N-Channel FinFET ID-VD特性曲線分析 40
3.1 鳍式場效電晶體介紹 40
3.1.1 鰭式電晶體元件結構 40
3.2 實驗與鰭式效電晶體製程 41
3.3 半導體儀器量測流程 42
3.4 測量條件 43
3.5 量測實驗結果 43
3.6 分析ID-VD特性曲線 46
第 4 章 自動控制與單晶片實驗 52
4.1 自動控制介紹 52
4.2 嵌入式系統介紹 53
4.3 微電腦架構與8051架構 54
4.4 ADC0804介紹 57
4.4.1 逐漸接近式類比-數位轉換 58
4.5 電壓量測與二氧化碳監控實驗 59
4.5.1 二氧化碳感測 60
4.5.2 程式碼: 63
第 5 章 結論 65

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