[1]2007.Nov. Intel.Available:http://www.intel.com/technology/wimax/index.htm
[2]C. Y. Huang, H. H. Juan, M. S. Lin, and C. J. Chang, “Radio Resource Management of Heterogeneous Services in Mobile WiMAX Systems [Radio Resource Management and Protocol Engineering for IEEE 802.16],” IEEE Wireless Communications, vol.14, pp. 20-26, February 2007.
[3]2007. Fujitsu:http://www.fujitsu.com/cn/fmc/services/lsi/wimax/index.html
[4]Finneran and Michael, “WiMAX Versus Wi-Fi:A Comparison of Technologies, Markets, and Business Plans,” pp. 1-24, June 2004.:http://searchmobilecomputing.techtarget.com/whitepaperPage/0,293857,sid40_gci968754,00.html
[5]K.W. Ho and H.C. Luong, “A 1V CMOS power amplifier for Bluetooth applications”, The 2002 45th Midwest Symposium on , Volume: 2 , pp.457 -460, Aug. 2002.
[6]J. Y. Li, “The Design of RF Power Amplifier Power Control for Wireless Communications,” CCL technical journal, pp. 65-69, Dec. 2003.
[7]T. C. Lin, “An Introduction to The Techniques of RF Power Amplifier Linearization,” CCL technical journal, pp. 69-73, Dec. 2001.
[8]S. C. Cripps, “RF Power Amplifiers for Wireless Communications,” Artech House, 1999.
[9]T. H. Lee, “The Design of CMOS Radio-Frequency Integrated Circuit,” Artech House, 2000.
[10]N. O. Sokal, and A. D. Sokal, “Class E-A new class of high-efficiency tuned single-ended switching power amplifiers,” IEEE Journal of Solid-State Circuit, vol. 10, pp. 168-176, June 1975.
[11]“高頻通訊電路設計”,袁帝文、王岳華、謝孟翰、王弘毅編著。
[12]“微波工程”,David M. Pozar 編著。
[13]B. Razavi, RF Microelectronics, Prentice Hall, 1997.
[14]林伯丞,應用於3.1~10GHz超寬頻收發機之CMOS前端電路設計,國立東華大學電機工程研究所,民國九十六年。
[15]廖哲宏,應用於IEEE 802.11a WLAN之5.7GHz CMOS 射頻接收機及功率放大器RFICs,國立成功大學電機工程學系碩士論文,民國九十二年。[16]IEEE std., Part 11:Wireless LAN Medium Access Control (MAC) and Physical Layer(PHY) specifications:High-speed Physical Layer in the 5 GHz Band, 1999 Edition.
[17]吳宗和,5.2GHz無線區域網路之射頻模組模擬、組製與整合測試,國立中正大學電機工程研究所碩士論文,民國九十一年七月。[18]Chen Hai and Wu Xiaobo, “A class D audio power amplifier with high-efficiency and low-distortion,” Proceedings of the ASP-DAC 2005. Asia and South Pacific Design Automation Conference, vol.2, pp. 815-818, Jan. 2005.
[19]A. Komijani, A. Natarajan,and A. Hajimiri, “A 24-GHz, +14.5-dBm Fully Integrated Power Amplifier in 0.18-μm CMOS,” IEEE Journal of Solid-State Circuits, vol.40, no. 9, Sep. 2005.
[20]YunSeong Eo and KwangDu Lee, “A fully integrated 24-dBm CMOS power amplifier for 802.11a WLAN applications,” Microwave and Wireless Components Letters, vol. 14, pp. 504-506, Nov. 2004.
[21]Solar H, Berenguer R, Adin I, Alvarado U, and Cendoya I, “A Fully Integrated 26.5 dBm CMOS Power Amplifier for IEEE 802.11a WLAN Standard with on-chip "power inductors",” IEEE MTT-S International Communications Microwave Symposium Digest, pp 1875-1878, June 2007.
[22]Tu S.H.-L, Chen S.C.-H, “5.25 GHz CMOS cascode power amplifier for 802.11a wireless local area network,” IET Microwaves, Antennas & Propagation, vol. 2, pp.627-634, Sep. 2008.
[23]C. Trask, “Class-F amplifier loading network: A unified design approach,” IEEEMTT-S International Microwave Symposium Digest, Vol.1 ,pp.351 - 354, June1999.
[24]A. N. Rodiakova, “BJT Class-F Power Amplifier near Transition Frequency,”IEEE Transactions on Microwave Theory and Techniques, Vol.53, pp.3045 –3050, Sept. 2005.
[25]A. Inoue, A. Ohta, S. Goto, T. Ishikawa, and Y. Matsuda, “The efficiency ofclass-F and inverse class-F amplifiers,” IEEE MTT-S International Microwave Symposium Digest, Vol.3, pp.1947 – 1950, June 2004.
[26]F. H. Raab, “Class-E, Class-C, and Class-F Power Amplifiers Based Upon aFinite Number of Harmonics,” IEEE Transactions on Microwave Theory and Techniques, Vol.49, pp.1462 – 1468, Aug. 2001.
[27]“射頻被動元件設計”,翁敏航編著。
[28]“RF CMOS IC Design Flow” CIC 教育訓練課程,2008
[29]H.Fouad H, A.-h Zekry, K. Fawzy, “Self-biased 0.13- µm CMOS 2.4-GHz Class E cascode power amplifier” 2009 National Radio Science Conference, pp.1-12, 17-19 Mar. 2009
[30]Yuen Sum Ng, L Leung, Ka Nang Leung, “A 3-GHz fully-integrated CMOS Class-AB power amplifier”, '09. 52nd IEEE International Midwest Symposium on Circuits and Systems, pp.995-998, 2-5 Aug. 2009
[31]Dae Hyun Kwon, Hao Li, Yuchun Chang, Tseng, R, Yun Chiu, “CMOS RF transmitter with integrated power amplifier utilizing digital equalization”, '09. IEEE Custom Integrated Circuits Conference, pp.403-406, 13-16 Sep. 2009
[32]Ghajar Mohammad Reza, Boumaiza Slim, “Concurrent dual band 2.4/3.5GHz fully integrated power amplifier in 0.13µm CMOS technology”, 2009 European Microwave Integrated Circuits conference, pp.375-378 28-29 Sep. 2009
[33]Y. S. Youn, J. H. Chang, K. J. Koh, Y. J. Lee, and H. K. Yu, “A 2GHz 16dBm IIP3 Low Noise Amplifier in 0.25 m CMOS Technology,” in Proc. IEEE International Soli d-State Circuits Conference, pp. 452-507, February 2003.
[34]郭純助,2.4GHz CMOS 線性化功率放大器,國立成功大學為電子工程所碩士論文,民國九十二年。[35]Cheng-Chi Yen and Huey-Ru Chuang,“A 0.25-µm 20-dBm 2.4-GHz CMOS power amplifier with an integrated diode linearizer,” IEEE Microwave and Wireless Components Letters, Vol. 13, Issue 2, pp. 45-47, Feb 2003.
[36]A. Mabrouki, T. Taris, Y. Deval, J.-B. Begueret,“CMOS low-noise amplifier linearization through body biasing”, IEEE International Symposium on Radio-Frequency Integration Technology, pp. 150-153, Dec. 2009.