臺灣博碩士論文加值系統

本論文主要探討在室溫下沉積10奈米(nm)的鎳金屬在矽基板，再以低溫形成鎳金屬矽化物層(Ni silicide layer) ，進而提出利用兩段式退火方式形成超薄的鎳金屬矽化物。第一階段的退火是利用低功率的微波退火進行，它會促進鎳金屬擴散通過一層在沉積鎳金屬時所形成的鎳-矽非晶層進入矽基板中。完成第一階段的退火後，將剩餘未反應的金屬移除。然後，第二階段的退火是使用快速熱退火，分別在以450℃跟600℃的溫度下形成鎳金屬矽化物，而我們所形成的厚度大約在8至17奈米(nm)。
　　另外，我們使用XRD跟TEM 去分析鎳金屬矽化物薄膜的晶相及厚度，並且使用四點探針量測片電阻。

In this thesis, we investigated low temperature formation of Ni silicide layer after room temperature deposition of a 10 nm Ni layer on (100) Si substrate. The formation of ultra-thin nickel (Ni) silicide film was using the two-stage annealing. The first stage is using the low power microwave annealing, that promotes Ni diffusion through a thin interfacial amorphous layer which formed during deposition. When the first stage was finished, the residual unreacted metal layer would etch off. Then, the second stage annealing is used to form the Ni silicide by RTA at 450 and 600 oC, respectively. The thickness of Ni silicide is about the range of 8-17 nm.
In addition, XRD and TEM were used to analysis the phase and thickness of Ni silicide film, respectively. And the sheet resistance would be measured by four-point probe.

Chinese Abstract i
English Abstract ii
Acknowledgment iii
Table Captions v
Figure Captions vi
Chapter 1 Introduction 1
1.1 Background and Motivation 1
1.1.1 History of silicide 1
1.1.2 Material of salicide 2
1.1.3 Phenomenon during the silicidation 4
1.2 Motivation 5
Chapter 2 Fundamental Principles and Experiments 11
2.1 Microwave mechanism 11
2.2 Comparsion between MWA and RTA 12
2.3 The formation of Ni silicide film 12
2.3.1 Process flow 12
2.3.2 Material measure and analysis 13
Chapter 3 Results and Discussions 18
3.1 Silicidation by rapid thermal annealing (RTA) 18
3.2 Silicidation by two-stage annealing process 19
3-2-1 The two-stage annealing process by microwave and RTA 19
3-2-2 Two-stage annealing by microwave 21
Chapter 4 Conclusion 36
References 37

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