臺灣博碩士論文加值系統

銅銦鎵硒薄膜太陽能電池，因具有直接能隙、極高的光吸收係數、可調變能帶及材料穩定性高等優勢，被認為是在太陽能電池產業最具潛力的材料。
　 本研究利用Cu-poor(Cu : In : Ga : Se = 24.50 : 21.56 : 7.16 : 46.78 (at .%))與Cu-rich(Cu : In : Ga : Se = 27.68 : 16.80 : 10.11 : 45.41 (at .%))之銅銦鎵硒四元合金靶材，藉由磁控濺鍍系統製作出CIGS吸收層，為了提升吸收層的品質，濺鍍完吸收層後，在高硒蒸氣的環境下使用快速熱退火的步驟硒化CIGS薄膜，並探討薄膜成分分析、結構特性、拉曼散射特性與形貌分析，在硒化溫度為500 ℃與硒化時間為30分鐘時，有晶粒最大與較少的Cu2Se存在。本論文也利用化學水浴法與磁控濺鍍法製備硫化鎘緩衝層，探討薄膜的光學特性與形貌分析。將較佳之參數製備成元件，太陽能電池元件結構為Ag(Sputtering, 300 nm)/AZO(Sputtering, 400 nm)/i-ZnO(Sputtering, 50 nm,)/CdS(Sputtering or CBD, 50 nm)/CIGS(Sputtering, 1500 nm~2000 nm)/Mo(Sputtering, 1000 nm)/SLG，利用太陽光模擬器量測電池之光電轉換效率。
　　實驗結果顯示，Cu-poor靶材製備出的元件經光照後量測其I-V 曲線，得開路電壓(Voc)為412.5 mV，短路電流密度(Jsc)為19.14 mA⁄cm^2 ，填充因子(FF)為57.75 %，轉換效率(η)為4.6 %；Cu-rich靶材製備出的元件經光照後量測其I-V 曲線，得開路電壓(Voc)為315 mV，短路電流密度(Jsc)為6.09 mA⁄cm^2 ， 填充因子(FF)為34.86 %，轉換效率(η)為0.7 %。Cu-poor靶材製備出的太陽能電池轉換效率較Cu-rich靶材佳，四元合金靶材的比例有助於改善光電轉換效率。

CIGS solar cell is one of the most promising candidates for future photovoltaic application, because it is a material with direct band gap, high absorption coefficient, tunable band gap and high material stability.
In this study, CIGS thin films were deposited by magnetron sputtering from two quaternary targets with the composition of Cu-poor and Cu-rich target. As-deposited thin films were selenized by rapid thermal annealing process to improve the quality of absorber layers. We investigated the influence of post-annealing temperature and post-annealing time on material composition, crystalline structure, raman spectrum and microstructure. We observed when CIGS film annealed at 500C and for 30 minutes, it has better crystallization and less second phase. The study also used chemical bath deposition (CBD) and magnetron sputtering to produce buffer layers and analyzed optical properties and microstructure. Solar cell structure, from top to bottom, were stacked by Ag (Sputtering, 300 nm), AZO (Sputtering, 400 nm), i-ZnO (Sputtering, 50 nm), CdS (Sputtering or CBD, 50 nm), CIGS (Sputtering, 1500 nm~2000 nm), Mo (Sputtering, 1000 nm) and SLG.
The measured highest conversion efficiency of the CIGS solar cell is 4.6 % with an open voltage of 412.5 mV, short circuit current density of 19.14 mA⁄cm^2 and fill factor of 57.75 % by Cu-poor target. Solar cell fabricated by Cu-rich target showed a conversion efficiency of 0.7 % with an open voltage of 315 mV, short circuit current density of 6.09 mA⁄cm^2 and fill factor of 34.86 %. Solar cell efficiency can be improved by adjusting ratio of quaternary-alloy target.

誌謝 I
摘要 II
Abstract III
目錄 IV
圖目錄 VI
表目錄 IX
第一章　緒論 1
1.1　前言 1
1.2　太陽能電池種類 2
1.2.1　矽晶太陽能電池 4
1.2.2　化合物半導體太陽能電池 5
1.2.3　新材料太陽能電池 6
1.3　研究動機與目的 7
1.4　文獻回顧 8
第二章　基本理論 11
2.1　太陽能電池基本理論 11
2.2　太陽能電池轉換效率 13
2.3　CIGS薄膜太陽能電池各層簡介 16
2.3.1　鈉玻璃基板 16
2.3.2　Mo背電極 17
2.3.3　CIGS吸收層 18
2.3.4　CdS緩衝層 21
2.3.5 ZnO及AZO窗口層 23
2.3.6 Ag上電極 24
2.4　磁控濺鍍原理 25
2.5　化學水浴沉積法 27
第三章　實驗流程與分析儀器 28
3.1　元件製作流程 28
3.2　實驗設備 29
3.2.1　濺鍍製程系統 29
3.2.2　硒化處理系統 30
3.2.3 化學水浴沉積系統 31
3.3　實驗分析儀器設備 32
3.3.1 表面輪廓儀（Surface profiler）分析 32
3.3.2　X光繞射（XRD）分析 32
3.3.3　場發射掃描式電子顯微鏡（FE-SEM）分析 35
3.3.4 拉曼光譜分析儀（Raman spectrocsopy） 37
3.3.5 四點探針（4-point）分析 39
3.3.6 霍爾量測儀（Hall measurment） 40
3.3.7 可見光光譜分析儀（VIS spectrometer） 41
3.3.8 太陽光模擬器（Solar simulator） 42
3.3.9 外部量子效應量測儀（EQE） 43
第四章分析與討論 44
4.1 　各層薄膜成長與分析 44
4.2 　製備Mo薄膜 44
4.3　 製備CIGS薄膜 46
4.3.1　CIGS薄膜EDS成分分析 48
4.3.2　CIGS薄膜XRD結晶結構分析 49
4.3.3　CIGS薄膜Raman散射分析 51
4.3.4　CIGS薄膜SEM形貌分析 52
4.4　硒化法合成CIGS薄膜實驗 53
4.4.1　硒化溫度對CIGS薄膜影響 54
4.4.1.1　硒化溫度對CIGS薄膜EDS成分分析 54
4.4.1.2　硒化溫度對CIGS薄膜XRD結構分析 55
4.4.1.3　硒化溫度對CIGS薄膜Raman散射分析 57
4.4.1.4　硒化溫度對CIGS薄膜SEM形貌分析 58
4.4.2　硒化時間對CIGS薄膜影響 60
4.4.2.1　硒化時間對CIGS薄膜EDS成分分析 60
4.4.2.2　硒化時間對CIGS薄膜XRD結構分析 62
4.4.2.3　硒化時間對CIGS薄膜Raman分析 65
4.4.2.4　硒化時間對CIGS薄膜SEM形貌分析 67
4.5 製備CdS薄膜 69
4.5.1　CdS薄膜光學特性分析 70
4.5.2　CdS薄膜SEM形貌分析 71
4.6 製備ZnO與AZO薄膜 72
4.7　太陽能電池元件量測效率 75
第五章　結論 81
參考資料 83

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