臺灣博碩士論文加值系統

硫化鋅(ZnS)具有寬能隙(~3.8eV)的特性，為Ⅱ-Ⅵ族化合物半導體成員之一，在商業上常使用作為螢光粉，具有優異的發光特性。本研究首先以旋轉塗佈方式在FTO透明導電玻璃上覆膜ZnS螢光漿料，經由高溫烘烤之後，製作成螢光粉試片。接著，利用掃描電子顯微鏡(SEM)平台當作量測系統，以SEM的電子槍當作電子源，探討在低電子能量(＜5 kV)時螢光粉層的電光效率轉換，以及螢光粉中的不同添加劑(金屬導電粉體、氧化物粉體)對電光轉換效率之影響。
本研究採用Kasei公司的兩種型號P22-GN4 (組成為ZnS:Cu,Al)和LDP-G1 (組成為ZnS:Cu,Al+ In2O3)螢光材料。實驗結果發現，LDP-G1電光效率轉換比P22-GN4好，由此可知In2O3的存在可以提升螢光粉的發光效率。另外，添加金屬導電粉體(Ag粉或CNTs)的螢光粉之電光轉換效率較差，比無添加物的螢光粉效率差；而添加SiO2粉體的螢光粉約有4倍的效率提升。

Zinc sulfide (ZnS) is a wide-gap (~3.8eV) Ⅱ-Ⅵ group semiconductor material and is commercially used as phosphor. ZnS with good luminescence properties is a candidate material for phosphors that emit visible light. First, the phosphor samples were prepared by spin-coating phosphor slurry on fluorine-doped tin oxide (FTO) conductive glass and they were heat treated at 450 oC ambience for 1 hr. Then, the phosphor samples were excited by the e-gun of Scanning Electron Microscopy (SEM) apparatus. The objective of this study is to analyze the transforming efficiency from electricity to light of the phosphor samples at low electricity energy (＜5 kV). In addition, the effect of adding different kinds of additives (such as metal powders or oxide powders) to samples was investigated.
Two kinds of phosphors from Kasei Company were used and compared in this study. Their compositions are ZnS:Cu,Al for Model P22-GN4 and ZnS:Cu,Al+ In2O3 for Model LDP-G1, respectively. The results show that the transforming efficiency from electricity to light of Model LDP-G1 was better than that of Model P22-GN4. It is proved that containing In2O3 in the phosphors can enhance the transforming efficiency. Also, adding metal powders (Ag or CNTs) to samples had no positive effect on the transforming efficiency, but adding SiO2 powders to samples increased four times of the transforming efficiency.

中文摘要 ----------------------------------------------------------------------------- i
英文摘要 ----------------------------------------------------------------------------- ii
致謝 ----------------------------------------------------------------------------- iv
目錄 ----------------------------------------------------------------------------- v
表目錄 ----------------------------------------------------------------------------- vii
圖目錄 ----------------------------------------------------------------------------- viii
一、 緒論--------------------------------------------------------------------- 1
1-1 前言-------------------------------------------------------------------- 1
1-2 研究動機--------------------------------------------------------------- 1
二、 理論基礎與文獻回顧------------------------------------------------ 3
2-1 螢光材料簡介及應用------------------------------------------------ 3
2-2 螢光材料的發光原理------------------------------------------------ 3
2-2-1 發光簡介--------------------------------------------------------------- 3
2-2-2 螢光粉的能量激發與吸收的轉換--------------------------------- 8
2-2-3 螢光材料的發光原理------------------------------------------------ 8
2-2-4 發光中心之種類與原理--------------------------------------------- 8
2-3 螢光材料的組成------------------------------------------------------ 12
2-4-1 硫化鋅的發展歷史-------------------------------------------------- 14
2-4-2 硫化鋅的特性與應用------------------------------------------------ 14
2-5 陰極射線發光(Cathodoluminescence,簡稱CL) ----------------- 16
2-6 P22-GN4和LDP-G1螢光粉--------------------------------------- 16
2-7 低壓顯示器------------------------------------------------------------ 17
2-9 添加物作用------------------------------------------------------------ 20
2-10 SEM的電子槍作用在試片上的情形---------------------------- 21
三、 實驗方法與步驟------------------------------------------------------ 23
3-1 實驗藥品及材料------------------------------------------------------ 23
3-2 儀器設備--------------------------------------------------------------- 25
3-3 實驗方法與步驟----------------------------------------------------- 30
3-3-1 螢光層之分析樣品製作--------------------------------------------- 30
3-3-2 SEM光電系統穩定性的校驗與量測----------------------------- 35
3-3-3 3-3-3 試片分析------------------------------------------------------- 38
四、 實驗結果與討論------------------------------------------------------ 42
4-1 清潔方式對導電玻璃基板的特性分析--------------------------- 42
4-2 SEM光電量測系統之校驗實驗----------------------------------- 42
4-2-1 廠商提供的coarse值和系統實驗值比較------------------------ 42
4-2-2 電子槍穩定性測試--------------------------------------------------- 42
4-2-3 I1 (PCD)與 I2 (sample holder)的吸收電流----------------------- 48
4-2-4 電壓與coarse值對I0 (即I2)的效應，廠商提供的coarse值與實驗值作比較------------------------------------------------------ 54
4-3 不同基材的試片吸收電子流-------------------------------------- 54
4-4 電子能量vs螢光粉層之光電轉換分析-------------------------- 56
4-4-1 P22-GN4和LDP-G1的EDS分析-------------------------------- 56
4-4-2 螢光粉層P22-GN4和LDP-G1的吸收電子流和CL分析--- 56
4-5 螢光粉添加物之效應----------------------------------------------- 56
五、 結論-------------------------------------------------------------------- 74
參考文獻--------------------------------------------------------------- 75
自述----------------------------------------------------------------------- 79

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