臺灣博碩士論文加值系統

在電力電子電路中，快速恢復二極體（FWD）的應用對整體系統來說有著越來越重要的地位與作用。傳統以純矽材料的FWD技術發展已達到成熟階段。在工業上的開關系統和控制上的應用，它已經發展到了極致。然而現在功率系統發展到更高功率密度，更高頻率特性時對FWD的要求也將隨之而增加。碳化矽（Silicon Carbide,SiC）為一種新型的半導體材質有更高的頻率，減少了開關損耗，比矽材料具有更高的工作溫度等特點，給高功率系統帶來新的發展契機，本論文既針對變頻器使用之功率元件IGBT進行比較與分析，藉由比較IGBT之FWD以矽材質及碳化矽材質於變頻器上在不同載波頻率設定與輸出電流下之損耗，來驗證碳化矽材質FWD對變頻器整體效率的提升與改善。

In the applications of power electronic systems, the role of the application to whole system in Freewheeling diodes (FWD) is becoming more important recently. Traditional technology on pure Silicon FWD development had reached the mature stage. Silicon carbide is a new kind of material used in semiconductor. It has many features such as higher working frequency, lower switching losses and higher working temperature comparing with the Silicon device. These features bring new development opportunities in high power systems. This paper has compared and analyzed the IGBT component which used in the inverter system. By comparing the losses of output current under different carrier frequency in inverter system between silicon and silicon carbide device, the improvement on efficiency of inverter which used silicon carbide FWD can be verified.

摘要 i
英文摘要 ii
目錄 iii
表目錄 V
圖目錄 V
第一章 緒論 1
1.1 前言 1
1.2 文獻回顧 1
1.3 研究動機與貢獻 2
1.4 論文內容 3
第二章 變頻器系統介紹 5
2.1 前言 5
2.2 變頻器架構 5
2.2.1 變頻器的原理與優點 6
2.3 變頻器控制原理 7
2.4 變頻器種類 10
2.4.1 變頻器的結構特徵 11
2.5 ]IGBT規格與特性 12
2.5.1 IGBT構造 12
2.5.2 IGBT用途和特徵 13
2.6 IGBT動作原理與特性 14
2.6.1 IGBT的導通與關斷 14
2.6.2 IGBT的靜態特性 14
2.7 本章結論 16
第三章 變頻器的功率損耗 17
3.1 前言 17
3.2 IGBT的損耗 17
3.2.1 IGBT導通損耗 18
3.2.2 IGBT切換損耗 19
3.2.3 IGBT的FWD損耗 21
3.3本章結論 22
第四章 碳化矽功率元件材質特性分析 23
4.1 前言 23
4.2碳化矽材質介紹 23
4.3碳化矽材質IGBT-SBD特性 26
4.3.1 元件結構和特徵 27
4.4 SIC-SBD與ZVS/ZCS控制的差異與特性 32
4.4.1 傳統硬性切換 32
4.4.2 ZVS/ZCS控制柔性切換 33
4.5 本章結論 35
第五章 硬體系統架構及實驗結果 36
5.1 前言 36
5.2實驗過程 36
5.2.1實驗架構 36
5.2.2實驗方式 38
5.3實驗結果 39
5.3.1反向恢復電流IC 39
5.3.2 VCE與IC交越功率Pmax 42
5.3.3 VCE與IC交越能量損失 45
5.3.4變頻器運轉之效率百分比 47
5.3.5變頻器運轉之損耗功率 51
5.4 本章結論 54
第六章 結論與未來展望 55
6.1 結論 55
6.2 未來展望 56
參考文獻 57

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