臺灣博碩士論文加值系統

在這篇論文，我們使用射頻磁控濺鍍法，分別於ITO玻璃，康寧玻璃Code 1737F和矽基板預鍍ZnO緩衝層再沉積ZnGa2O4螢光體。探討製程參數對ZnO緩衝層的影響及緩衝層對ZnGa2O4螢光體發光機制的影響。X-ray繞射的量測顯示出氧化鋅薄膜的優選擇方向為[002]以及ZnGa2O4螢光體的優選擇方向[111]。在穿透率方面，我們所製作之螢光面結構(ZnGa2O4/ZnO/C-glass)其穿透率平均可高達百分之九十。在本實驗，多了ZnO緩衝層，我們已成功增強藍光激發峰(475 nm)。

In this paper, we successfully enhance the luminescent intensity of the blue ZnGa2O4 phosphor for field emission display. The ZnO was deposited on ITO/glass, Corning-glass and Si substrate, then a ZnGa2O4 phosphor layer was subsequently deposited on ZnO by RF magnetron sputtering. Two studies were emphasized, one part of studies was focused at the effect of process parameter on the property zinc oxide thin films, and the other was counteracted the influence of ZnO on luminescent mechanism of ZnGa2O4 phosphor.
In this study, the XRD measurements show that the ZnO thin films have a preferred orientation along the [002] direction, and the preferred orientation of the ZnGa2O4 films annealed at 400℃ is [111] direction. Ftom chathodoluminesence spectra measurement, it reveals that a enhanced blue emission can be obtained when the ZnGa2O4 phosphor is deposited on ZnO/Si, ITO/glass and C-glass substrates.
In annealing analyses, we found that the deposited films showed blue and green emission spectra with peaks at 470 and 510 nm, respectively. When the deposited ZnGa2O4 thin films annealed in different temperatures, the peak wavelength of luminescence will be changed. Therefore, the emission wavelength of phosphor film can be altered by varying the annealing temperature.

Content
Abstract (in Chinese) Ⅰ
Abstract (in English) Ⅱ
Acknowledgement Ⅳ
Content Ⅴ
Figure Captions Ⅷ
Chapter 1. Introduction 1
1-1 Properties of ZnGa2O4 phosphor 1
1-2 The history of Field Emission Display 2
1-3 Properties of ZnO phosphor 3
Chapter 2. Theory basis and material properties 6
2-1 Glow discharge 6
2-2 Theory of sputtering 6
2-3 Thin film formation 7
2-4 Properties of ZnGa2O4 phosphor 8
2-4-1 Host material 8
2-4-2 Luminescent Center 9
2-5 Properties of ZnO phosphor 9
Chapter 3. Experimental details and measurement system configurations 11
3-1 Sputtering system 11
3-2 Experiment procedures 12
3-2-1 Experiment material 12
3-2-2 Substrate preparation 12
3-2-3 Fabrication of thin films 13
3-3 Measurement system 14
3-3-1 AES principle 14
3-3-2 XRD 15
3-3-3 CL spectra 16
3-3-4 Electron-property 17
Chapter 4. Results and Discussion 18
4-1 The ZnGa2O4 films deposited on the ITO/glass substrate 18
4-1-1 XRD analyses 18
4-1-2 SEM analysis 19
4-1-3 CL spectra 19
4-2 Corning-glass substrate 20
4-2-1 The ZnO films deposited on Corning-glass substrate 20
4-2-1-1 XRD analysis and electricity characteristic 20
4-2-1-2 SEM analyses 22
4-2-1-3 Transmittance measurement 22
4-2-2 The ZnGa2O4 phosphor deposited on the ZnO/C-glass 23
4-2-2-1 XRD analyses 23
4-2-2-2 CL spectra 23
4-2-1-3 Transmittance measurement 24
4-3 Si substrate 25
4-3-1 The ZnO films deposited on Si substrate 25
4-3-1-1 XRD analysis 25
4-3-2 The ZnGa2O4 phosphor deposited on the ZnO/Si substrate 26
4-3-2-1 XRD analyses 26
4-3-2-2 CL spectra 26
4-3-3 The effect of annealing 27
4-3-1-1 XRD analyses 28
4-3-1-2 CL spectra 28
4-4 ITO/glass substrate 29
4-4-1 The ZnO films deposited on ITO/glass substrate 29
4-4-1-1 XRD analysis 29
4-4-2 The ZnGa2O4 phosphor deposited on the ZnO/ ITO/glass substrate30
4-4-2-1 XRD analyses 30
4-4-2-2 CL spectra 31
4-4-3 The effect of annealing 32
Chapter 5. Conclusion 34
Reference 35
Figure Captions
Chapter 2
Fig. 2-1 Formation of the thin film.
Fig. 2-2 The ZnGa2O4 lattice structure.
Chapter 3
Fig. 3-1 RF sputtering system.
Fig. 3-2 The schematic of AES and XPS instrument and the illustration of principle.
Fig. 3-3 Correction factor for measurement of resistivity using a four-point probe.
Chapter 4
Fig. 4-1 X-ray diffraction patterns of ZnGa2O4 films deposited on
ITO/glass substrate at various deposited time.
Fig. 4-2 X-ray diffraction patterns of ZnGa2O4 films deposited on ITO/glass substrate at various RF power.
Fig. 4-3 X-ray diffraction patterns of ZnGa2O4 films deposited on ITO/glass substrate at various sputtering pressure.
Fig. 4-4 X-ray diffraction patterns of ZnGa2O4 films deposited on ITO/glass substrate at various oxygen flow ratio.
Fig. 4-5 SEM images of the films surface morphology.
Fig. 4-6 CL spectrum measure of ZnGa2O4 deposited on the ITO/glass.
Fig. 4-7 X-ray diffraction patterns of ZnO films deposited on Corning-glass substrate at various Oxygen flow ratio.
Fig. 4-8 Four-point probe measure of ZnO films deposited on Corning-glass substrate at various Oxygen flow ratio.
Fig. 4-9 X-ray diffraction patterns of ZnO films deposited on Corning-glass substrate at various RF power.
Fig. 4-10 Four-point probe measure of ZnO films deposited on Corning-glass substrate at various RF power.
Fig. 4-11 X-ray diffraction patterns of ZnO films deposited on Corning-glass substrate at various RF power.
Fig. 4-12 Four-point probe measure of ZnO films deposited on Corning-glass substrate at various sputtering pressure.
Fig. 4-13 SEM images of the films, (a) surface morphology, and (b) cross section structure.
Fig. 4-14 Spectrophotometer patterns of the films with different (a) powers, (b) pressures, and (c) oxygen flow ratios.
Fig. 4-15 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/C-glass substrate at various ZnO fIlms Oxygen flows.
Fig. 4-16 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/C-glass substrate at various ZnO RF power.
Fig. 4-17 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/C-glass substrate at various ZnO sputtering pressure.
Fig. 4-18 CL measure of ZnGa2O4 films deposited on ZnO/C-glass substrate at various grown ZnO fIlms Oxygen flows.
Fig. 4-19 CL measure of ZnGa2O4 films deposited on ZnO/C-glass substrate at various grown ZnO films RF power.
Fig. 4-20 CL measure of ZnGa2O4 films deposited on ZnO/C-glass substrate at various grown ZnO sputtering pressure.
Fig. 4-21 CL measure compared of with and without ZnO buffer layer.
Fig. 4-22 Transparency measure of ZnGa2O4 films deposited on ZnO/C-glass substrate at various grown ZnO fIlms (a) deposition time, (b) RF power, (c) sputtering pressure, and (d) oxide ratio. substrate temperature: no hear, annealing for 1 hour at 400℃.
Fig. 4-23 X-ray diffraction patterns of ZnO films deposited on Si substrate at various oxygen flow ratio.
Fig. 4-24 X-ray diffraction patterns of ZnO films deposited on Si substrate at various RF power.
Fig. 4-25 X-ray diffraction patterns of ZnO films deposited on Si substrate at various RF power.
Fig. 4-26 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/Si substrate at various ZnO films oxygen flow ratio.
Fig. 4-27 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/Si substrate at various ZnO RF power.
Fig. 4-28 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/Si substrate at various ZnO sputtering pressure.
Fig. 4-29 CL measurements of ZnGa2O4 films deposited on ZnO/Si substrate at various grown ZnO films oxygen flow ratio.
Fig. 4-30 Four-point probe measurements of ZnGa2O4 films deposited on ZnO/Si substrate at various grown ZnO films oxygen flows.
Fig. 4-31 CL measurements of ZnGa2O4 films deposited on ZnO/Si substrate at various grown ZnO films RF power.
Fig. 4-32 CL measurements of ZnGa2O4 films deposited on ZnO/Si substrate at various grown ZnO sputtering pressure.
Fig. 4-33 CL measurements compared of with and without ZnO buffer layer.
Fig. 4-34 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/Si substrate at different annealing temperature.
Fig. 4-35 FWHM of XRD for (111) ZnGa2O4 film annealed in different temperatures.
Fig. 4-36 CL measure of ZnGa2O4 films deposited on ZnO/Si substrate at different annealing temperature.
Fig. 4-37 X-ray diffraction patterns of ZnO films deposited on ITO/glass substrate at various oxygen flow ratio.
Fig. 4-38 X-ray diffraction patterns of ZnO films deposited on ITO/glass substrate at various RF power.
Fig. 4-39 X-ray diffraction patterns of ZnO films deposited on ITO/glass substrate at various RF power.
Fig. 4-40 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/ITO/glass substrate at various ZnO films oxygen flow ratio.
Fig. 4-41 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/Si substrate at various ZnO RF power.
Fig. 4-42 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/ITO/glass substrate at various ZnO sputtering pressure.
Fig. 4-43 CL measurements of ZnGa2O4 films deposited on ZnO/ITO/glass substrate at various grown ZnO films RF power.
Fig. 4-44 CL measurements of ZnGa2O4 films deposited on ZnO/ITO/glass substrate at various grown ZnO sputtering pressure.
Fig. 4-45 CL measurements of ZnGa2O4 films deposited on ZnO/ITO/glass substrate at various grown ZnO films oxygen flow ratio.
Fig. 4-46 Four-point probe measurements of ZnGa2O4 films deposited on ZnO/ITO/glass substrate at various grown ZnO films oxygen flows.
Fig. 4-47 CL measurements compared of with and without ZnO buffer layer.
Fig. 4-48 X-ray diffraction patterns of ZnGa2O4 films deposited on ZnO/ITO/glass substrate at different annealing temperature.
Fig. 4-49 CL measurements of ZnGa2O4 films deposited on ZnO/ITO/glass substrate at different annealing temperature.

Reference
[1] I. J. Hsieh, K. T. Chu, C. F. Yu, and M. S. Feng, J. Appl Phys., 76, 3735-3739 (1994).
[2] T. Minami, T. Maeno, Y. Kuroi, and S. Takata, Jpn. J. Appl. Phys., 34, L684-L687 (1995).
[3] S. S. Yi, I. W. Kim, J. S. Bae, B. K. Kim, J. H. Jeong, Materials Letters, 57, 904-909 (2002).
[4] Y. E. Lee, David P. Norton, J. D. Budai, and Y. Wei, J. Appl. Phys., 90, 3863-3866 (2001).
[5] Y. E. Lee, D. P. Norton, and J. D. Budai, Appl. Phys. Letters, 74, 3155-3157 (1999).
[6] S. S. Yi, I. W. Kim, H. L. Park, J. S. Bae, B. K. Kim, J. H. Jeong, Journal of Crystal Growth, 247, 213-218 (2003).
[7] J. S. Bae, B. K. Moon, B. C. Choi, J. H. Jeong, S. S. Yi, I. W. Kim, and J. S. Lee, Thin Solid Films, 424, 291-295 (2003).
[8] Y. J. Kim, Y. H. jeong, K. D. kim, S. G. Kang, K. G. Lee, J. I. Han, Y. K. Park and K. I. Cho, J. Vac. Sci. Technol. B, 16, 1239-1243 (1998).
[9] D. C. Look. Materials Science and Engineering, B80, 383-387 (2001).
[10] J. Chen, Y. Zhang, B. J. Skromme, K. Akimoto, and S. J. Pachuta. J. Appl. Phys., 78, 5109 (1995).
[11] Hang-Ju Ko, Soon-Ku Hong, Yefen Chen, Takafumi Yao. Thin Solid Films, 409, 153-160 (2002).
[12] D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto. Appl. Phys. Lett., 70, 2230 (1997).
[13] T. Sekiguchi, K. Haga, K. Inaba. Journal of Crystal Growth, 214/215, 68-71 (2000).
[14] J. F. Rommeluère, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing. Appl. Phys. Lett., 83, 287 (2003).
[15] P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Jr. Appl. Phys. Lett., 82, 1117 (2003).
[16] D. H. Zhang, Z. Y. Xue and Q .P. Wang. J. Phys. D: Appl. Phys., 35, 2837-2840 (2002).
[17] X. W. Sun, L. D. Wang, H. S. Kwok, Thin Solid Films, 360, 75-81 (2000).
[18] S. F. Chichibu, T. Yoshida, T. Onuma, and H. Nakanishi. J. Appl. Phys., 91, 874 (2002).
[19] B. Chapman, “Glow Discharge Processes”, John Wiley & Sons, P. 202, 1980.
[20] 藍慶忠，“場放射顯示器藍光ZnGa2O4發光機構之研究”，國立高雄應用科技大學電子與資訊工程研究所碩士論文， P. 11，2003。
[21] S. M. Sze, “Physics of Semiconductor Devices”, John Wiley & Sons, P. 31, 1981.
[22] B.D. Cullity, Elements of X-ray Diffraction, 2nd Edition, Addison Wesley, Reading, MA, p. 102, 1978.
[23] 林天坤，“光激化學氣相沉積二氧化矽於氮化鋁鎵與氮化鋁鎵/氮化鎵金氧半異質結構場效電晶體”，國立雲林科技大學電子與資訊工程研究所碩士論文， P. 17，2003。