臺灣博碩士論文加值系統

本論文主要研製一具有寬能隙功率元件之交錯式功率因數修正器，與傳統矽功率元件相比，氮化鎵功率元件具有高電子遷移率、高飽和電子速度、高崩潰電場，低導通電阻等優點，可提高切換頻率且不增加過多的切換損失，以達到減小磁性元件體積、提高功率密度的效果。
本文所研製的交錯式功率因數修正器的規格包含：輸出功率750 W，輸入電壓115 Vac/60 Hz與230 Vac/60 Hz，輸出電壓400 Vdc，切換頻率300 kHz。經實驗結果證實，在滿載情況下，當輸入電壓為115 Vac時效率可達93%以上，功率因數可達0.996；當輸入電壓為230 Vac時效率可達95%以上，功率因數可達0.94以上。

The objective of this thesis is to design and implement an interleaved power factor corrector with wide bandgap devices. Compared with traditional silicon power devices, the gallium nitride power devices have the advantages of high electron mobility, high saturable velocity, high electrical field strength and low on-resistance. The switching frequency can be increased without increasing the excessive switching loss in order to reduce the magnetic components size and increase power density.
The design specifications include: output power rating of 750 W, input AC voltage 115 Vac and 230 Vac, output DC voltage of 400 Vdc and switching frequency of 300 kHz. Experimental results show that the efficiency is up to 93%, power factor is greater than 0.996 in low line voltage and full load condition. The efficiency is up to 95%, power factor is greater than 0.94 in high line voltage and full load condition.

摘　要 i
ABSTRACT ii
誌 謝 iii
目 錄 iv
表目錄 vi
圖目錄 vii
第一章 緒論 1
1.1 研究背景與動機 1
1.2 研究目的 5
1.3 內容大綱 6
第二章 功率因數修正器控制原理 7
2.1 功率因數定義 7
2.2 功率因數修正器電路 10
2.3 主動式功率因數修正器控制 12
2.4 交錯式功率因數修正器之動作原理 14
第三章 數位控制器分析與設計 22
3.1 昇壓型轉換器小訊號推導 22
3.2 數位控制器分析與設計 29
3.3 均流控制法則之分析 38
3.4 電路元件設計 40
3.4.1 電感設計 40
3.4.2 輸出電容設計 45
3.4.3 功率元件選用 46
3.4.4 電感電流回授電路設計 47
3.4.5 閘極負壓驅動電路設計 48
3.4.6 PCB Layout注意事項 49
3.5 程式設計 50
3.5.1 高解析度脈波寬度調變 57
第四章 模擬與實驗結果 61
4.1 交錯式功率因數修正器模擬 61
4.2 實驗平台 66
4.3 實測波形 67
4.4 實驗數據 85
第五章 結論與未來展望 94
5.1 結論 94
5.2 未來展望 94
參考文獻 95
附錄 99

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