臺灣博碩士論文加值系統

本研究將以旋轉塗佈方式成長氧化銦鎵鋅薄膜。塗佈液為醋酸鋅、氯化鋅、三氯化鎵、氯化銦之適當比例的混合水溶液。接著將塗佈液均勻塗佈於玻璃基板上，最後再以高溫爐管烘烤形成氧化銦鎵鋅薄膜。
本研究主要以不同的醋酸鋅水溶液濃度、氯化鋅水溶液濃度、三氯化鎵水溶液濃度和氯化銦水溶液濃度；不同烘烤溫度等參數成長氧化銦鎵鋅薄膜。先以薄膜穿透率量測分析薄膜光特性；再以霍爾量測了解薄膜之電特性；最後透過原子力顯微鏡、掃描式電子顯微鏡及X射線繞射分析儀分析薄膜之表面型態及剖面結構。我們發現成長最佳化氧化銦鎵鋅薄膜之最佳濃度分別為：醋酸鋅濃度為0.02 M，氯化銦濃度為0.01 M；最佳烘烤溫度為：300℃。最佳化氧化銦鎵鋅薄膜之平均穿透率為 90%；最佳載子濃度為-3.04E+18，載子移動率為1.99cm2 /Vs。由於薄膜具高穿透率且高導電性，未來可將氧化銦鎵鋅薄膜運用在TFT透明導電薄膜。

Indium Gallium Zinc Oxide(IGZO) Thin Films was prepared by spin-coating technology in this thesis. The solution composed of zinc acetate, Zinc Chloride, gallium trichloride, Indium chloride is used as the coating, which spins on the glass substrate uniformly. The IGZO film will form on the substrate after baking in furnace system.
The effects of zinc acetate, Zinc Chloride, gallium trichloride, Indium chloride ,and baking temperature were investigated in this thesis through the transmittance in visual range, Hall, atomic force microscope (AFM) images, scan electron microscope (SEM) images and X-ray diffraction(XRD).
The optimal concentration of zinc acetate is 0.02M, concentration of Indium chloride is 0.01M. The best baking temperature is about 300 ℃under vacuum condition. The transmittance of IGZO film are 90 %, under the optimal condition, The bulk concentration is -3.04E+18 and mobility is 1.99cm2 /Vs , under the optimal condition。
As the film with high transmittance and high electrical conductivity, we can use the IGZO thin films in TFT transparent conductive film in the future.

摘要............ i
誌謝...........iii
目錄..... iv
第一章 簡介.... 1
1.1 透明導電膜......1
1.2氧化鋅(ZnO)......... 2
1.3 非晶IGZO薄膜.... 4
第二章 基礎理論與實驗流程... 5
2.1 透明導電薄膜之理論..... 5
2.1.1 透明導電薄膜之導電性質.... 5
2.1.2 透明導電薄膜之光學性質... 6
2.1.3 Burstein Moss shift 效應... 8
2.2 非晶IGZO薄膜之理論..... 10
2.2.1 非晶IGZO 薄膜各元素對於其結構之影響... 10
2.2.2 非晶IGZO 薄膜各元素對於其薄膜電晶體電性之影響... 12
2.3 非晶IGZO 薄膜的製備方法... 13
2.4 實驗流程... 15
2.4.1 清洗基板.... 16
2.4.2 UV/O3 清潔機.... 17
2.4.3 快速熱退火處理(RTA)之原理與流程.... 18
2.5 量測儀器.... 20
2.5.1 掃描式電子顯微鏡(SEM).... 20
2.5.2 X-ray 繞射分析(X-ray Diffraction，XRD).... 23
2.5.3 穿透光譜量測分析.... 24
2.5.4霍爾效應量測.... 26
第三章 實驗結果與討論.... 33
3.1 氧化銦鎵鋅薄膜 33....
3.1.1 銦濃度對氧化銦鎵鋅薄膜之影響.... 33
3.1.2 X-ray 繞射分析..... 34
3.1.3 SEM表面結構分析..... 36
3.1.4 熱退火之影響(SEM).... 38
3.1.5 EDS分析.... 40
3.1.6薄膜光穿透率分析.... 42
3.1.7 退火之影響(穿透).... 43
3.2鋅濃度對氧化銦鎵鋅薄膜之影響.... 44
3.3鎵濃度對氧化銦鎵鋅薄膜之影響.... 45
3.4 最佳濃度退火之霍爾量測... 46
第四章 結論.... 47
參考文獻... 48

 

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