臺灣博碩士論文加值系統

　　本篇論文中，研究P型氮化鎵進行表面處理形成光子晶體結構以提昇藍色發光二極體的萃取效率，使用電漿輔助化學氣相沉積法(PECVD)沉積二氧化矽於P型氮化鎵表面，運用旋轉塗佈法在二氧化矽層成長自組裝之單層聚苯乙烯微球，使用反應離子蝕刻機(RIE)將聚苯乙烯微球作為遮罩層蝕刻二氧化矽層，再以二氧化矽層為遮罩利用感應耦合電漿離子蝕刻系統(ICP)蝕刻P型氮化鎵，其中利用旋轉塗佈法具有價格低廉及容易製作並且速度快等優點；當藍色發光二極體出射光經過光子晶體，將產生破壞及建設性干涉減少全反射現象，進而提升發光二極體萃取效率。

本論文中，製備自組裝苯乙烯奈米球不需使用大型極昂貴設備、簡易組裝有序的奈米球光子晶體構造。然而以旋轉塗佈法組裝奈米球其中奈米球的濃度、旋轉轉數及基板親水性皆會影響奈米球的排列，我們將做一系列的研究。接著，我們以R-Soft FDTD軟體模擬P型氮化鎵光子晶體於藍色發光二極體上的萃取效率，模擬結果發現改變P型氮化鎵光子晶體間距及直徑可有效增加萃取效率。實驗部分，得知P型氮化鎵蝕刻深度為130nm及奈米柱直徑為350nm和間距為150nm時，於驅動電流20mA下量測，其發光效率可增加37%，此部分與模擬結果符合。

　　In this dissertation, Studying p-type gallium nitride is surface treated to form a photonic crystal structure to enhance the extraction efficiency of the blue light-emitting diode. Using Plasma Enhanced Chemical Vapor Deposition (PECVD) deposition of cerium oxide on P-type gallium nitride surface, growning Single-layer polystyrene microspheres by spin coating. Etching the cerium oxide layer using polystyrene microspheres as a mask layer using RIE,then etching p-type gallium nitride using ruthenium dioxide layer as mask by ICP. Among them, the spin coating method has the advantages of low cost, easy production, and high speed; When the blue light emitting diode emits light through the photonic crystal, damage and constructive interference will be generated to reduce the total reflection phenomenon, thereby improving the extraction efficiency of the light emitting diode.
　　Preparation of self-assembled styrene nanospheres without the use of large and extremely expensive equipment, simple assembly and ordering of polystyrene nanosphere photonic crystal structures.However,spinning coating method to assemble polystyrene nanospheres. The concentration of polystyrene nanospheres, the number of rotations and the hydrophilicity of the substrate all affect the alignment of the polystyrene nanospheres. Then we use R-Soft FDTD software to simulate the extraction efficiency of P-type gallium nitride photonic crystals on blue light-emitting diodes. The simulation results show that changing the P-type gallium nitride photonic crystal pitch and diameter can effectively increase the extraction efficiency. In the experimental part, when the p-type gallium nitride etching depth is 130 nm and the nano-pillar diameter is 350 nm and the period is 150 nm, the luminous efficiency can be increased by 37% under the driving current of 20 mA. This part is in accordance with the simulation results.

摘要......i
Abstract......ii
誌謝......iv
目錄......v
表目錄......vii
圖目錄......viii
第一章 簡介......1
1.1氮化銦鎵/氮化鎵(InGaN/GaN)發光二極體......1
1.2光子晶體(Photonic crystals)......3
1.3光子晶體製備......4
2.1半導體原理......6
2.1.1光子在半導體中與電子的相互作用......6
2.2發光二極體原理......7
2.2.1 LED發光效率......8
2.2.2內部量子效率( internal quantum efficiency ,IQE)......8
2.2.3光萃取效率( Light extraction efficiency ,LEE)......9
2.2.4外部量子效率( Extermal quantum efficiency ,EQE)......9
2.3光萃取效率原理......10
2.4波動光學-電磁光學模擬套件RSoft......12
第三章 實驗方法與步驟......14
3.1實驗流程......14
3.2氮化銦鎵/氮化鎵(InGaN/GaN)藍色發光二極體......15
3.2.1氮化銦鎵/氮化鎵(InGaN/GaN)藍色發光二極體元件製程......15
3.3實驗系統介紹......20
3.3.1電漿化學氣相沉積系統......20
3.3.2旋轉塗佈系統......20
3.3.3反應式離子蝕刻機......21
3.3.4感應耦合式電漿離子蝕刻系統......21
3.4實驗量測分析......22
3.4.1 LED測試機......22
3.4.2場發掃描式電子顯微鏡(FE-SEM)......22
3.5波動光學-電磁光學模擬套件RSoft 模擬......23
3.5.1模擬之元件結構......23
第四章 實驗結果與討論......24
4.1製備P型氮化鎵光子晶體......24
4.1.1不同旋轉塗佈法轉速正面圖......24
4.1.2不同旋轉塗佈法轉速剖面圖......27
4.2波動光學-電磁光學模擬RSoft模擬......28
4.3、P型氮化鎵光子晶體製備......39
4.3.1反應式離子蝕刻機(RIE)蝕刻......39
4.3.2感應耦合式電漿離子蝕刻系統(ICP)蝕刻......42
4.4氮化鎵光子晶體應用於氮化銦鎵/氮化鎵(InGaN/GaN)藍色發光二極體......44
第五章 結論......50
參考文獻......51
Extended Abstract......55

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