臺灣博碩士論文加值系統

本論文包含兩主題：兩倍供應電壓輸出緩衝器電壓迴轉率補償之製程與溫度偵測器，以及具製程、電壓及溫度補償與自我調節電壓迴轉率控制器之兩倍供應電壓輸出緩衝器。
第一個主題探討一個兩倍供應電壓輸出緩衝器電壓迴轉率補償之製程與溫度偵測器。對於偵測電路部分，本設計分別利用N型電晶體與P型電晶體之門檻電壓分別偵測N型電晶體與P型電晶體所落在製程的角落。兩倍供應電壓輸出級的驅動電流在不同的製程與溫度環境下會不同，例如在較差的角落下，兩倍供應電壓輸出級的驅動電流會較低，此時偵測電路會補償兩倍供應電壓輸出級的驅動電流；而在較佳的角落下，兩倍供應電壓輸出級的驅動電流會較高，此時偵測電路會降低兩倍供應電壓輸出級的驅動電流，使兩倍供應電壓輸出級之電壓迴轉率在不同的製程與溫度環境下的變異縮小。
第二個主題探討一具製程、電壓及溫度補償與自我調節電壓迴轉率控制器之兩倍供應電壓輸出緩衝器。其對於製程偵測電路部分，與第一個主題相同，是分別利用N型與P型電晶體之門檻電壓偵測N型與P型電晶體所落在的角落，並補償。而電壓及溫度偵測電路部分，則是利用PMOS電晶體之基體效應來偵測與補償。進而使輸出級之電壓迴轉率在不同的製程、電壓與溫度環境下的變異縮小。

This thesis is composed of two designs: a PT (process, temperature) detector for 2×VDD output buffer with slew rate compensation, and a slew rate self-adjusting 2×VDD output buffer with PVT compensation.
In the first topic, a PT detector for 2×VDD output buffer with slew-rate compensa-tion is proposed. The driving current of 2×VDD output stages varies provided that the process and temperature conditions are different. For example, the driving current of 2×VDD output stage will be low at poor PVT corners. By contrast, the driving current will be high at good PVT corners. The process corner and temperature of NMOS and PMOS should be detected by threshold voltage variation thereof, respectively, such that the slew rate compensation is feasible. The proposed sensors will carry out the PT de-tection and compensate the driving current based on the detected corner, such that the slew rate variation of the output stage will be reduced.
The second topic is a slew rate self-adjusting 2×VDD output buffer with PVT compensation. An NMOS and PMOS process detector is proposed to detect the process corners of NMOS and PMOS, respectively, while the voltage and temperature sensor is proposed to detect the voltage and temperature variations by body effect.

致謝 i
摘要 ii
Abstract iii
目錄 iv
圖次 vi
表次 ix
第一章 概論 1
1.1 研究動機 1
1.2 相關技術與文獻探討 4
1.2.1 傳統輸出輸入單元 4
1.2.2 先前文獻中之混合電壓共容輸出入緩衝器 5
1.2.3 先前文獻中之製程、電壓與溫度變異偵測電路 5
1.3 論文大綱 7
第二章 兩倍供應電壓輸出緩衝器電壓迴轉率補償之製程與溫度偵測器 9
2.1 簡介 9
2.2 PT偵測器電路架構 9
2.3 PT偵測器電路設計 10
2.3.1 製程與溫度偵測器 10
2.3.2 製程與溫度判斷器 15
2.3.3 兩倍供應電壓輸出緩衝器 17
2.4 PT偵測器電路模擬 23
2.4.1 電壓迴轉率補償結果 23
2.4.2 預計規格 24
2.5 晶片佈局 24
2.6 晶片實測與量測結果 26
2.7 結果與討論 30
第三章 具製程、電壓及溫度補償與自我調節電壓迴轉率控制器之兩倍供應電壓輸出緩衝器 31
3.1 簡介 31
3.2 PVT偵測器電路架構 31
3.3 電路設計 32
3.3.1 PVT偵測器 (PVT sensor) 32
3.3.2 PVT判斷器 (PVT decider) 36
3.3.3 輸出緩衝器 (Output buffer) 37
3.4 PVT偵測器電路模擬 40
3.4.1 電壓迴轉率補償結果 40
3.4.2 預計規格 41
3.5 晶片佈局 42
3.6 晶片實作與量測結果 43
3.7 結果與討論 47
第四章 研究結果與結論 48
參考文獻 51
附錄A 54
附錄B 56

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