臺灣博碩士論文加值系統

近年來，生醫訊號擷取與分析系統大多朝向可攜式研究為目標。採用電池安裝啟動之方式，目的是增加使用之可攜性與便利性。由於人體體溫相對於腦波與心跳是相當明顯的生理訊號，為了讓可攜式裝置能達到自動啟動及停止之動作，本論文將利用溫度晶片整合於可攜式生醫系統控制電源開關動作，更能達到系統晶片與可攜式生醫系統整合。
一般數位溫度感測系統包括前端的溫度感測電路及能帶隙參考電壓源，與後端的類比數位轉換電路，本論文基於基體推動（bulk driven）技術設計，達到低輸入電壓、低消耗功率之效果，並整合了溫度顯示及溫度開關電路。(1) 溫度開關是利用PMOS當主動負載將能帶隙參考電壓分壓，與溫度感測電路產生的電壓在30℃時經過比較電路控制MOSFET開關，MOSFET與後端偏壓電路連接，以控制MOSFET開與關，即控制後端電路動作與不動作之切換。(2) 溫度顯示是將溫度感測電路利用反相放大器調整電壓及線性度，達到足夠的解析度，以供外接的ADC使用。(3) 能帶隙參考電壓設計為0.75V，是為了之後將ADC整合在晶片內所預留，在此範圍主要是能得到較佳的感測準確度。
本論文的晶片設計使用台積電0.18um 1P6M CMOS的標準製程參數，模擬 -10℃∼80℃溫度範圍內，所設計的電路正比於溫度變化的電壓值，電壓隨溫度變化率為2.25 mV/℃，能帶隙參考電壓為0.75V。

Most of the portable devices for biomedical are starting by the installation of battery. In recent years, with the evolution of manufacturing process and microelectronic technology, the chip is easier to integrate with the portable biomedical system. For the convenience, we want to siwich the system by temperature. Because the human body temperature is a very clear physiological signal compared with the brain waves and heart rate, this thesis integrate the temperature circuit into the biomediacal system used for a switch.
A traditional digital temperature sensor system is composed of a temperature sensor in the front-end design and an analog to digital converter (ADC) in the back-end design. To reach the effect of low input voltage and low power consumption, this thesis uses the bulk driven technology. Moreover, the functions of temperature display and the temperature switch are also integrated into the design. The proposed design has three features as follows. (1) The temperature switch uses PMOS as active load to divide the bandgap voltage. The divided voltage will compare with the voltage of temperature sensor at 30℃ to control MOSFET connected with the bias circuit in the back-end design. (2) Temperature display is that the temperature sensor uses the inverting amplifier to adjust the voltage and linearity and to achieve sufficient resolution for the external ADC. (3) The bandgap reference voltage is designed as 0.75V. This can be integrated with ADC in the future and can get better sensor accuracy.
In this thesis, the proposed chip design is implemented by TSMC 0.18um 1P6M CMOS standard process parameters and is simulated in the temperature range from -10℃ to 80℃. Especially, the circuit voltage is proportional to temperature. This means that the voltage increases 2.25mV when temperature rises by 1℃. The bandgap reference voltage is designed as 0.75V.

中文摘要 ii
ABSTRACT iii
誌 謝 v
目錄 vi
圖目錄 viii
表目錄 xi
第一章 緒論 1
1-1 溫度感測簡介 1
1-2 論文架構 4
第二章 溫度感測相關研究 5
2-1 CMOS製程溫度感測相關研究 5
2-1-1 弱反轉區（weak inversion）之溫度感測器設計 6
2-1-2 橫向式雙載子接面電晶體與縱向式雙載子接面電晶體 7
2-2 低電壓電路設計相關研究 9
2-2-1 浮動閘極（Floating Gate）MOSFET 9
2-2-2 基體推動（Bulk-Driven）MOSFET 12
2-2-3 基體推動MOSFET之原理 20
2-3 研究動機 21
第三章 溫度感測器電路 24
3-1 系統架構 24
3-2 CMOS溫度感測器 25
3-2-1 正比於絕對溫度電路 26
3-2-2 能帶隙參考電壓源（Bandgap Reference）電路 29
3-3 基體推動MOSFET電路之特性 33
3-3-1 基體推動MOSFET之頻率特性 33
3-3-2 基體推動MOSFET之雜訊（Noise） 34
3-3-3 基體推動MOSFET差動對 39
第四章 電路設計及模擬結果 41
4-1 模擬環境與設計流程 41
4-2 溫度開關及感測之整體電路架構 41
4-3 基體推動之正比於絕對溫度電路架構 43
4-4 基體推動之能帶隙參考電壓電路架構 46
4-5 電壓緩衝器（voltage buffer） 48
4-6 全電路模擬結果 54
4-6-1 溫度感測顯示 54
4-6-2 溫度開關 55
第五章 晶片實現與量測 59
5-1 晶片佈局 59
5-2 晶片佈局後模擬 61
5-3 佈局驗證結果錯誤說明 67
5-4 測試考量及預計規格列表 69
第六章 結論與未來展望 71
6-1 結論 71
6-2 未來展望 71
參考文獻 73
附錄： 77
A. 打線圖(SB18) 77
B. Tapeout Review Form 78
C. CIC Tapeout Question & Reply 83

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