臺灣博碩士論文加值系統

我們以X光吸收光譜探討銅離子植入超奈米鑽石薄膜 (UNCD)電子結構的改變，樣品分別以相同能量(300KeV)不同劑量的銅離子束照射之UNCD，劑量為1x1015到 1x1017 (ions/cm2)。在C K-edge 光譜中我們觀察到，照射後的譜形與未照射(Pristine)的譜形完全不同，鑽石的特徵激子峰以及二次能隙在照射後消失鑽石結構遭到破壞，而在285 eV、286 eV 、287 eV及288 eV 的位置上，分別為π* bond、C-OH bond、C-H bond 及表面缺陷所造成的吸收強度有明顯的增強。π* bond的位置發現吸收強度隨著劑量不同有強度上的變化，在劑量超過1x1016 (ions/cm2)時，吸收強度突然下降且吸收峰往低能量(284 eV)位移；C-OH bond吸收強度有隨著劑量增加而減少的情形，但在劑量超過1x1016 (ions/cm2)時，吸收強度大幅度的上升；C-H bond 隨著劑量的增加而增加，但在劑量到達5x1016時突然下降；表面缺陷吸收強度隨著劑量的增加，有先增加後減少的情形，而在最大劑量時為最低在。在Cu K-edge 光譜中我們發現主吸收峰和肩膀峰吸收強度隨著劑量的增加而減少，且譜形往高能量位移，銅的電子組態[Ar]3d94sp增加，[Ar]3d10減少。在Cu L2，3-edge光譜中我們觀察到隨著劑量上升時，譜形無明顯變化，但在最大劑量1x1017 (ions/cm2)時，我們觀察到L2，3-edge的主吸收峰有寬化情形，3d-4s-4p 混成程度上升。

We have performed x-ray absorption near edge structure (XANES) study on Cu ion implanted, fluence varies from 1x1015 to 1x1017 ions/cm2, ultra-nano crystalline diamond (UNCD) films. From the XANES of C K-edge of the films, we found that the absorption intensity of sp3 structure decreased tremendously. In the meantime, the exciton peak and the second band gap are completely disappeared. We also observed the absorption intensities due to sp2 structure, C-OH bond, C-H bond and the surface defect peaks all increase. As the Cu-ion fluence reached 1x1016 ions/cm2, the absorption intensity of sp2 peak decreases, the intensities of C-H bond and the surface defect peaks increase. When the Cu-ion fluence reached 5x1016 ions/cm2, the sp2 peak shifts to lower energy, which may be related to the formation of amorphous carbon. Also the intensity of C-OH peak increases, and the intensities of C-H and the surface defect peaks decrease at fluence of 5x1016 ions/cm2. From the spectra of Cu K-edge, the intensity of the main peak, due to Cu 1s to 4p transition, decreases as the Cu-ion fluence increases. From Cu L2,3-edge we found an obvious broadening of the main absorption peaks at the highest fluence. When the fluence increases, sp3 structure decreases and sp2 structure increases. While the fluence exceeds 5x1016 ions/cm2, sp2 structure decreases and the amorphous carbon forms. At the highest fluence, Cu 3d-4s-4p hybridization increases.

目錄
致 謝
目錄
第一章 簡介 1
1-1鑽石 4
1-2 碳的鍵結 5
1-3鑽石的負電子親和力及電子場發射性質 7
1-4 鑽石薄膜的特性與分類 13
1-5 研究動機 14
第二章 X光吸收光譜簡介 16
2-1 X光吸收光譜近邊緣結構（XANES） 20
2-2 延伸X光吸收光譜精細結構（EXAFS） 21
2-3 數據分析 25
XANES 30
EXAFS 30
第三章 實驗設備與量測方法 31
3-1 X光光源： 31
3-2 單色儀(monochromator)： 32
3-3 光譜測量方式： 33
第四章 實驗結果分析 38
4-1 石墨、鑽石薄膜與鑽石 XANES 的比較 39
4-2 C K-edge (XANES) 40
4-3 Cu K-edge (XANES) 42
4-4 Cu L2，3-edge (XANES) 43
第五章 結論 53
參考文獻 56


圖表目錄
圖1- 1鑽石結晶型態 6
圖1- 2石墨結構 6
圖1- 3金屬-真空能帶示意圖 12
圖1- 4 離子照射後電子場發射性質圖(J-E 曲線) 及 Fowler-Nordheim 15
圖2- 1物質吸收截面與能量之關係圖 18
圖2- 2 XANES與EXAFS分界圖 19
圖2-3 光電子平均自由路徑與能量關系圖圖 21
圖2- 4單一散射與多重散射之圖示 22
圖2- 5以雙原子分子的情況來表示吸收光譜與光電子末態波函數關係的示意圖 23
圖2- 6出射電子受鄰近原子的背向散射而產生干涉現象 23
圖2- 7選擇能量底限E0值的不同方法 26
圖2- 8 X光吸收光譜之數據分析流程 30
圖3- 1 X光吸收光譜實驗示意圖 33
圖3- 2穿透式 33
圖3- 3光通過物質之強度衰減 34
圖3- 4螢光式 35
圖3- 5電子逸出式 36
圖3- 6光子吸收過程 37
圖4- 1石墨、鑽石、鑽石薄膜C K-edge 比較圖 44
圖4- 2不同鑽石薄膜 C K-edge 吸收光譜圖 44
圖4- 3未照射之UNCD C K-edge 吸收光譜圖 45
圖4- 4最低照射劑量與未照射C K-edge吸收光譜比較 45
圖4- 5不同照射劑量之 C K-edge 吸收光譜圖 46
圖4- 6不同照射劑量相疊之 C K-edge 吸收光譜圖 46
圖4- 7不同照射劑量照射前後 C K-edge 相差譜 47
圖4- 8 Cu K-edge 吸收光譜圖 48
圖4- 9不同照射劑量Cu K-edge 吸收光譜圖 48
圖4- 10不同照射劑量相疊之Cu K-edge吸收光譜圖 49
圖4- 11高劑量B低劑量A與CuO、Cu2O Cu K-edge 比較圖 49
圖4- 12 Cu L23-edge 吸收光譜圖 50
圖4- 13不同照射劑量Cu L23-edge 吸收光譜圖 50
圖4- 14不同射劑量相疊之Cu L23-edge 吸收光譜圖 51
圖4- 15 Cu s-p-d 混成 52
圖5- 1不同劑量場發射圖形 55

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