臺灣博碩士論文加值系統

由於面射型雷射具有體積小，雷射光束極細且不易發散，光束為對稱圓形，低啟動電流，，輸出效率高，容易和光纖連接，單一雷射波長輸出，共振腔極短等優勢，可見其應用範圍相當廣泛，如夜間照明輔助光源、雷射滑鼠、雷射測距、懸浮觸控感測元件等，因此國內有許多研究團隊非常努力的研究面射型雷射這門領域。

本研究主要是利用III-V族半導體材料GaAs及AlGaAs使用有機金屬化學氣相沉積法(MOCVD)在基板上沉積出N-type及P-type的布拉格反射鏡(DBR)共分別為40及21對之磊晶層結構，再以黃光微影製程製作出做出850nm波長的VCSE元件並使用水氣氧化技術，侷限操作電流以提升輸出功率，並使用積分球、頻譜分析儀量測其VCSEL元件之光束發散角，中心波長、額定電壓以及輸出功率等。在本次的研究中可發現VCSEL元件相較於IR-LED能使用較低的電流產生更高的輸出效率，應用在安防監控輔助光源以、距離量測及懸浮觸控感測有著更好的效果。

Since the surface-emitting laser with a small, very fine and difficult to divergent laser beam , the beam is circular, low starting current , high output efficiency, easy and fiber optic connectors , a single laser output wavelength resonant cavity is very short and other advantages, it shows a wide range of applications , such as night lighting auxiliary light source , laser mouse , laser ranging, suspension and other touch sensing elements , so there are many domestic research team worked very hard this door surface emitting laser field .

This study is the use of III-V semiconductor materials GaAs and AlGaAs using metal organic chemical vapor deposition (MOCVD) deposited on a substrate, N-type and P-type Bragg reflector (DBR) were respectively 40 and 21 of the epitaxial layer structure , then photolithography process to produce a 850nm wavelength VCSE components made using the water vapor oxidation technology , the limitations of the operating current to increase the output power , and using an integrating sphere , spectrum analyzer measuring its beam VCSEL components divergence angle , the center wavelength , output power and the rated voltage . In this study can be found in IR-LED can be used to produce a lower current efficiency higher output compared to the VCSEL components , used in security monitoring auxiliary light source , distance measurement and the suspension has a better touch sensing effect.

目　　錄
摘　　要---------------i
Abstract---------------ii
誌　　謝---------------iii
目　　錄---------------iv
表目錄------------------vi
圖目錄------------------vii
符號說明----------------viii

第一章　緒論---------------1
1.1　前言 1
1.2　VCSEL簡介------------1
1.3　研究動機--------------3
1.4　本文內容與章節-------3

第二章　研究背景----------4
2.1　VCSEL基本理論-------4
2.2　結構分析--------------6

第三章　研究方法-----------8
3.1　水氣氧化法簡介--------8
3.1.1水氣氧化法機制---------9
3.1.2水氣氧化法架構---------11
3.2 VCSEL元件製作----------12
VCSEL元件製作(一)----------12
VCSEL元件製作(二)----------16
VCSEL元件製作(三)----------19
VCSEL元件製作(四)----------23
VCSEL元件製作(五)----------26

第四章結果與討論-----------29

第五章結論------------------34

參考文獻--------------------35

簡歷-------------------------37

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