臺灣博碩士論文加值系統

本研究主要探討金屬/介電層/金屬結構在提升表面電漿共振感測器之靈敏度和量測精度上的應用，首先為利用模擬找出最佳金屬/介電層/金屬感測器的結構參數並制備樣品，從量測結果與模擬可證明具金屬/介電層/金屬結構的感測器半高寬較傳統單層金屬結構窄，此較窄的半高寬有助於感測器靈敏度的提升,另外，此金屬/介電層/金屬結構的感測器因同時激發二種不同特性的表面電漿模態，可進一步應用於自我修正的感測功能。
在金屬/介電層/金屬結構中，因雙層金的表面電漿相互耦合會產生奇對稱和偶對稱的二個表面電漿模態，其中奇對稱表面會再與下層金屬/待測物介面的表面電漿產生耦合現象，即產生SPWAu/solution –like與SPWodd-like，這樣的耦合效應可將SPWAu/solution –like共振角更逼近於臨界角，進而使半高寬變窄。
此外， SPWodd-like模態的表面電漿共振條件對待測物濃度變化幾乎不受影響，此特性可應用於濾除環境干擾的誤差值，以達到提升感測器量測精確度的期望，而上述這些理論與方法在本論文中利用模擬與實驗加以證實。

he enhancement of sensitivity and precision of surface plasmon resonance (SPR) sensors by metal/dielectric/metal (MDM) structures was investigated in this work. Based on numerical simulation, both the MDM SPR sensors with appropriate parameters and the traditional SPR sensors were fabricated. The full width at half maximum of the MDM SPR sensor under angular interrogation was found to be narrower than that of traditional SPR sensor both in numerical simulation and in practice.
In addition, a novel MDM SPR sensor featured with the function of self-correction was developed. The principle of this device was based on the facts that an odd-symmetric surface plasmon wave (SPWodd) and an even-symmetric SPW (SPWeven) can be sustained by the MDM structure and another SPW (SPWAu/solution) can be sustained by the bottom metal/analyst interface. As the bottom metal is thin enough, SPWodd and SPWAu/solution can couple with each other and then split into two SPW modes, SPWodd-like and SPWAu/solution-like with the intended characteristics.
The resonance angle of SPWAu/solution-like can be pushed to approach the critical angle by this coupling effect and the sensitivity associated with this resonance is therefore improved. Besides, the SPWodd-like is barely affected by the refractive index variation of the solution. This fact indicates that the SPWodd-like signal can be adopted as a reference for canceling the common mode noises during the measurement. Details of the realization are included in this thesis.

目錄
指導教授推薦書
口試委員會審定書
致謝 iii
中文摘要 iv
Abstract v
目錄 vi
圖目錄 viii
表目錄 x
第一章 導論 -1-
1.1 表面電漿簡介 -1-
1.2 研究動機與目的 -2-
第二章 理論基礎 -3-
2.1 表面電漿共振原理 -3-
2.2 介電物質與金屬介面表面電漿模態 -5-
2.3 表面電漿激發方式 -7-
第三章 量測系統與實驗架構 -12-
3.1樣品的製備 -12-
3.2樣品製作流程 -12-
3.3葡萄糖濃度配置 -15-
3.4全反射角量測 -16-
3.5反射光強模擬與分析 -18-
3.6量測分析儀器 -23-
3.7實驗系統架設 -24-
第四章 實驗結果分析與討論 -26-
4.1表面電漿在金屬/介電層/金屬結構變角度-反射光模擬 -26-
4.2表面電漿在金屬/介電層/金屬結構變角度-反射光量測 -29-
4.3葡萄糖濃度變化之共振角量測 -34-
4.4葡萄糖濃度變化之反射率量測 -40-
第五章 結論 -44-
參考文獻 -45-

圖目錄
Fig.2.1-1 表面電漿電場隨著遠離金屬與介電物質介面呈指數性遞減 -4-
Fig.2.2-1金屬表面電荷密度受TM 極化電磁波示意圖 -7-
Fig.2.3-1光柵耦合示意圖 -8-
Fig.2.3-2光柵耦合激發表面電漿色散曲線圖 -8-
Fig.2.3-3金屬表面電漿之色散曲線圖 -9-
Fig.2.3-4 (a)Kretschmann組態 (b)Otto組態 -11-
Fig.3.2-1 金屬/介電層/金屬蒸鍍結構示意圖 -14-
Fig.3.3-1稜鏡內部入射光計算示意圖 -18-
Fig.3.4-1模擬SF11-Au(30~40nm)/SiO2(310nm)/Au(30~40nm) -22-
Fig.3.4-2模擬SF11-Au(40nm)/SiO2(300~320nm)/Au(30nm) -22-
Fig.3.6.1 實驗架設示意圖 -25-
Fig.4.1-1模擬SF11含Cr(1nm)-Au(40nm)/SiO2(310nm)/Au(30nm) -26-
Fig.4.1-2奇函數模態與金屬/待測物的表面電漿色散曲線關係圖 -28-
Fig.4.2-1樣品A在待測物為水之模擬與量測擬合結果 -31-
Fig.4.2-2樣品B在待測物為水之模擬與量測擬合結果 -31-
Fig.4.2-3樣品C在待測物為水之模擬與量測擬合結果 -32-
Fig.4.2-4 MDM結構與傳統結構之模擬與實際量測 -32-
Fig.4.2-5 MDM結構與傳統結構之色散曲線關係圖 -33-
Fig.4.2-6 FSEM下各層厚度的實際狀況示意圖 -33-
Fig.4.3-1模擬樣品A在不同葡萄糖濃度下的共振角與反射率關係圖 -35-
Fig.4.3-2樣品A葡萄糖濃度與共振角關係圖之模擬 -36-
Fig.4.3-3樣品A葡萄糖濃度與共振角關係圖之量測 -36-
Fig.4.3-4模擬樣品B在不同葡萄糖濃度下的共振角與反射率關係圖 -37-
Fig.4.3-5樣品B葡萄糖濃度與共振角關係圖之模擬 -37-
Fig.4.3-6樣品B葡萄糖濃度與共振角關係圖之量測 -38-
Fig.4.3-7模擬樣品C在不同葡萄糖濃度下的共振角與反射率關係圖 -38-
Fig.4.3-8樣品C葡萄糖濃度與共振角關係圖之模擬 -39-
Fig.4.3-9樣品C葡萄糖濃度與共振角關係圖之量測 -39-
Fig.4.4-1樣品B之模擬與擬合結果 -41-
Fig.4.4-2樣品B折射率與反射率關係之模擬 -42-
Fig.4.4-3樣品B折射率與反射率關係之實驗量測 -42-
Fig.4.4-4差動理論量測示意圖 -43-

表目錄
表1 濃度與折射率關係表 -15-
表2 樣品之預期厚度 -35-

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