臺灣博碩士論文加值系統

本研究利用溶凝膠法合成金屬離子摻雜ZnO薄膜，如Cu-doped ZnO (CZO), In-doped ZnO (IZO), Ga-doped ZnO (GZO), In/Ga-doped ZnO (IGZO)，將此薄膜製作於薄膜電晶體(thin film transistor, TFT)元件，探討金屬離子對ZnO與TFT特性的影響。金屬離子摻雜ZnO樣品是以低溫溶凝膠法，在60℃時以不同濃度的金屬離子，控制溶液的pH值下合成出ZnO摻雜金屬離子之樣品，並以分析儀器分析樣品的特性。結果得知，摻雜不同金屬離子的ZnO樣品，會造成ZnO結晶結構的扭曲，且隨著金屬摻雜濃度增高，晶粒大小則隨之減小。ZnO摻雜金屬離子後，其電阻率(resistivity)和載子遷移率(mobility)有下降之趨勢，但是載子濃度則有升高之趨勢。由於摻雜金屬影響ZnO結晶結構，以致ZnO的能態分佈，如導帶(Conduction band, Ec)和價帶( Valance band, Ev)會受到不同程度的影響，能隙(Energy gap, Eg)也進而(因此)受到改變。此外，將此樣品進一步製作於TFT的導電通道上，發現不同金屬離子摻雜的ZnO薄膜，對TFT元件的特性，如臨界電壓(threshold voltage, Vth)、電流開關比(Ion/off)、與次臨界擺幅(subthreshold swing, SS)會有明顯的影響。

In this study, we investigated the properties of Cu-doped ZnO(CZO) , In-doped ZnO (IZO), Ga-doped ZnO (GZO), and In- and Ga-doped ZnO (IGZO) crystals, used for the fabrication of thin film transistor (TFT). These Metal-doped ZnO samples with different dopant compositions were prepared by sol-gel synthesis at 60 oC and characterized. Results showed that the crystal sturture of the doped ZnO was distorted and the grain sizes of the crystals decreased in the presence of the metal ion dopants. The resistivity and mobility of all the doped ZnO samples decreased, but the carrier concentration increased in the presence of the metals. The energy levels of all crystals, such as conduction band (Ec) and valence band (Ev), were estimated and varied depending on the presence of different dopants in ZnO. The bandgap energy (Eg) of metal-doped ZnO was varied with respect to ZnO because of the variations of the energy levels. The metal-doped ZnO films, fabricated in TFT device, affected the device performance, i,e. on/off ratio (Ion/off), threshold voltage (Vth), and subthreshold swing (SS), was also affected by the presence of the dopants.

摘要 i
Abstract ii
致謝 iii
目錄 iv
表目錄 vii
圖目錄 viii
第一章 緒論 1
1.1 前言 1
1.2 研究動機與目的 2
第二章 理論基礎與文獻回顧 3
2.1薄膜電晶體(Thin Film Transistor)的介紹 3
2.2薄膜電晶體半導體材料 5
2.3金屬離子摻雜氧化鋅 6
2.4製作摻雜金屬離子的氧化鋅 6
第三章 實驗方法與分析 12
3.1製備CZO、GZO、IZO、IGZO 12
3.2薄膜電晶體製備 14
3.3樣品量測 15
3.3.1薄膜電晶體量測 15
3.3.2線性伏安法測定 16
3.4實驗藥品 21
3.5實驗與分析儀器 23
第四章 結果與討論 30
4.1.1醋酸鋅醋酸銅滴定曲線分析 31
4.1.2 CZO樣品的UV-Vis光譜分析 35
4.1.3 CZO樣品的的UV-Vis光譜分析 38
4.1.4 CZO樣品的的能態分析 40
4.1.5 CZO樣品的XRD分析 45
4.1.6 CZO樣品的表面結構分析 51
4.1.7 CZO樣品的電性分析 52
4.2氧化鋅摻雜鎵和銦 58
4.2.1硝酸鋅硝酸鎵硝酸銦溶液滴定曲線分析 58
4.2.2 GZO和IZO樣品的UV-Vis光譜分析 61
4.2.3 GZO和IZO樣品的能態分析 64
4.2.4 GZO和IZO樣品的XRD分析 69
4.2.5 GZO和IZO樣品的表面結構分析 75
4.2.6 GZO和IZO樣品的電性分析 77
4.2.7 GZO和IZO樣品的光至螢光譜分析 82
4.3氧化鋅共摻雜鎵銦 84
4.3.1 IGZO樣品的UV-Vis光譜分析 84
4.3.2 IGZO樣品的能態分析 87
4.3.4 IGZO樣品的表面結構分析 96
4.3.5 IGZO樣品的電性分析 98
4.3.6 IGZO樣品的光至螢光譜分析 102
4.4薄膜電晶體分析 103
4.4.1薄膜電晶體分析 103
第五章 結論 115
參考文獻 116
 

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