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研究生:陳秉毅
研究生(外文):Bin-yi Chen
論文名稱:GSM/DCS 四頻手機功率放大器模組電路特性研究
論文名稱(外文):Study of Power Amplifier Module for GSM/DCS Quad-Band Cell Phone
指導教授:王曙民陳聲寰
指導教授(外文):Shuming T.WangShen-Whan Chen
口試委員:王曙民陳聲寰程深
口試委員(外文):Shuming T.WangShen-Whan ChenShen Cheng
口試日期:2013-06-21
學位類別:碩士
校院名稱:義守大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:中文
論文頁數:57
中文關鍵詞:GSMDCS功率放大器射頻開關積體電路控制器
外文關鍵詞:GSMDCSPower AmplifierRF SwitchPower Controller
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本論文是設計適用於手機GSM/DCS四種頻段之功率放大器模組電路,並探討其特性及特性量測。手機功率放大器模組除工作於GSM/DCS兩組放大器外,並包含射頻開關以及控制訊號路徑與放大器增益之積體電路控制器。模組化功率放大器可降低生產成本,且通用性高,同時適用於國內外多種系統,擁有良好效率,因此可成為極具競爭力之產品。
本論文將依序介紹功率放大器、射頻開關、積體電路控制器之工作原理與設計理論,再將其整合為所設計之模組電路。同時利用模擬軟體將各部分電路做模擬並修正誤差,以達所設計之目標。最後說明量測之步驟與方法,並展現量測之成果。

In this thesis a compact and cost effective power amplifier (PA) module for GSM/DCS Quad-Band cell phone was designed and fabricated. This module combines three various chips. One works as a quad-band PA for GSM/DCS system and was fabricated on GaAs HBT substrate. Another one is a SP7T switch which is used to separate the paths of signals such as transmission and receiving signals for GSM and DCS, respectively. The SP7T switch was fabricated on GaAs pHEMT substrate. The third chip is mixed logic controller IC which is fabricated with CMOS process. The controller circuit provides the required signal to control the SP7T switch and also gives the base D.C.bias voltage to power amplifier so that the PA output power can be regulated. The design principle and architecture of each chips, simulation and measurement techniques were discussed in detail. The measurement results show a good consistence with simulation and the performance of the PA module nearly meet the specification of a commercial product.
摘要 i
ABSTRACT ii
目錄 iii
圖目錄 v
表目錄 viii
第一章 緒論 1
1-1研究背景與動機 1
1-2論文內容與架構 2
第二章電路架構及模擬 3
2-1 GSM/DCS系統特性之比較 3
2-2 GSM/DCS四頻手機功率放大器模組電路之架構 5
2-2-1 功率放大器之工作理論與設計模擬 7
2-2-1-1 A類放大器 7
2-2-1-2 B類放大器 8
2-2-1-3 AB類放大器 9
2-2-1-4 功率放大器之設計電路 10
2-2-1-5 功率放大器之模擬 11
2-2-2 射頻開關之工作理論與設計模擬 14
2-2-2-1 射頻開關之電路設計 14
2-2-2-2 射頻開關之模擬 16
2-2-3 積體電路控制器之工作理論與設計模擬 19
2-2-3-1增益與補償 21
2-2-3-2 體電路控制器之模擬 21
2-3 GSM/DCS四頻手機功率放大器模組之工作理論與設計模擬 23
2-3-1 GSM/DCS四頻手機功率放大器模組電路之模擬 25
第三章 電路量測結果 28
3-1 量測 28
3-1-1 量測準備 29
3-1-2 量測步驟 33
3-1-2-1 Full Power 33
3-1-2-2 1/4 Power 35
3-1-2-3 Gain量測 37
3-2 量測結果 39
第四章 結論 40
4-1結論 40
參考文獻 41


圖目錄
圖2-1. 四頻手機功率放大器模組電路架構圖 5
圖2-2. A類放大器電路圖 7
圖2-3. A類放大器輸出入信號波形示意圖 7
圖2-4. B類放大器電路圖 8
圖2-5. B類放大器輸出入信號波形示意圖 8
圖2-6. AB類放大器電路圖 9
圖2-7. AB類放大器輸出入信號波形示意圖 9
圖2-8. 功率大器之方塊圖 10
圖2-9. 功率放大器Layout圖與實體圖 10
圖2-10. 功率放大器_GSM頻段電路圖 11
圖2-11. 功率放大器_DCS頻段電路圖 12
圖2-12. GSM/DCS_頻率與輸入輸出反射係 12
圖2-13. GSM/DCS輸入匹配點史密斯圖 13
圖2-14. GSM/DCS 頻率與增益 13
圖2-15. GSM/DCS直流轉交流之效率 14
圖2-16. 射頻開關之方塊圖 14
圖2-17. 射頻開關Layout圖與實體圖 15
圖2-18. SP7T射頻開關電路結構圖 15
圖2-19. 射頻開關模組電路圖 17
圖2-20. TX/RX路徑插入損失 18
圖2-21. TX/RX路徑之隔離度 18
圖2-22. 積體電路控制器之方塊圖 19
圖2-23. 積體電路控制器 Layout和實體圖 20
圖2-24. 增益與補償電路 21
圖2-25. GSM_Vout vs. APC_IN:(a)VBAT=3.1V (b) VBAT= 4.8V 22
圖2-26. DCS_Vout vs. APC_IN:(a)VBAT=3.1V (b) VBAT= 4.8V 22
圖2-27. (a)GSM_Vout vs. VD (b) DSC_Vout vs. VD 23
圖2-28. GSM/ DCS四頻手機功率放大器模組之方塊圖 24
圖2-29. (a) EVB佈局圖 (b)EVB加上三個積體電路晶片與被動元件 25
圖2-30. 功率放大器模組輸出匹配電路插入損失模擬圖 26
圖2-31. GSM/DCS模式功率放大器模組匹配電路之插入損失 26
圖2-32. GSM/DCS功率大器模組輸出匹配點模擬圖 27
圖2-33. GSM/DCS輸出匹配電路阻抗史密斯圖 27
圖3-1. PCB Layout與PCB實體圖 28
圖3-2. 手機功率放大器模組測試PCB 28
圖3-3. 校正系統損耗接線圖 29
圖3-4. 線材、衰減器和扣除板子損耗之PCB 29
圖3-5. 向量訊號產生器 30
圖3-6. 頻譜分析儀 30
圖3-7. 訊號產生器 31
圖3-8. 示波器 31
圖3-9. 示波器波形圖 32
圖3-10. 網路分析儀 32
圖3-11. Full Power量測系統示意圖 33
圖3-13. 頻譜分析儀量測示意圖 34
圖3-14. 1/4 Power量測系統示意圖 35
圖3-15. 1/4 Power量測實圖 35
圖3-16. 1/4 Power主頻 36
圖3-17. 1/4 Power二倍頻 36
圖3-18. 1/4 Power三倍頻 36
圖3-19. 增益量測系統示意圖 37
圖3-20. 增益量測實圖 37
圖3-21. 網路分析儀GSM量測圖 38
圖3-22. 網路分析儀DCS量測圖 38


表目錄
表2-1. GSM/DCS頻率比較表 4
表2-2. GSM_無輸入信號時三級各電流 11
表2-3. DCS_無輸入信號時三級各電流 12
表2-4. 射頻開關真值表(H=高電壓、L=低電壓) 16
表2-5. 積體電路控制器真值表(H=高電壓、L=低電壓) 20
表2-6. 積體電路控制器輸入與輸出訊號之規格 21
表2-7. GSM/DCS四頻手機功率放大器模組之真值表(H=高電壓、L=低電壓) 24
表3-1. GSM各頻率下線損和板損 30
表3-2. DCS各頻率下線損和板損 30
表3-3. GSM_Full_Power 39
表3-4. GSM_1/4_Power 39
表3-5. DCS_Full_Power 39
表3-6. DCS_1/4_Power 39

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