參考文獻
Koch, M.J.; Fisher, R.E.;”A high efficiency 835 MHz linear power amplifier for digital cellular telephony”, Vehicular Technology Conference, 1989 IEEE 39th, 1-3, vol.1, May 1989, Pages: 17 - 18
Staudinger, J.; Gilsdorf, B.; Newman, D.; Norris, G.; Sadowniczak, G.; Sherman, R.; Quach, T.;”High efficiency CDMA RF power amplifier using dynamic envelope tracking technique”, Microwave Symposium Digest, 2000 IEEE MTT-S International, Volume: 2, 11-16, June 2000, Pages: 873 - 876
Staudinger, J.; Gilsdorf, B.; Newman, D.; Norris, G.; Sadowniczak, G.; Sherman, R.; Quach, T.; Wang, V.; “800 MHz power amplifier using envelope following technique”, Radio and Wireless Conference, 1999. RAWCON 99. 1999, IEEE, 1-4 Aug. 1999, Pages: 301 – 304
Miers, T.H.; Hirsch, V.A.;“A thorough investigation of dynamic bias on linear GaAs FET power amplifier performance”, Microwave Symposium Digest, 1992, IEEE MTT-S International, 1-5, vol.2, June 1992, Pages: 537 - 540
Noh, Y.S.; Park, C.S.; “An intelligent power amplifier MMIC using a new adaptive bias control circuit for W-CDMA applications”, Solid-State Circuits IEEE Journal of, Volume: 39 , Issue: 6 , June 2004, Pages: 967 - 970
Masaya Iwamoto; Pin-Fan Chen; Andre G Metzger; Lawrence E Larson; Peter M Asbeck; “An Extended Doherty Amplifier With High Efficiency Over a Wide Power Range”, IEEE Transactions on Microwave Theory and Techniques, Volume: 49, Issue: 42, December 2001, Pages: 2472 - 2479
Jeonghyeon Cha; Youngoo Yang; Bumjae Shin; Bumman Kim; “An adaptive bias controlled power amplifier with a load-modulated combining scheme for high efficiency and linearity”, Microwave Symposium Digest, 2003 IEEE MTT-S International, Volume: 1, 8-13 June 2003, Pages: 81 - 84
Gerald K. Wong; Stephen Long; “An 800 MHz HBT Class-E Amplifier With 74% PAE at 3.0 Volts for GMSK”, Microwave Symposium Digest, 1999 IEEE MTT-S International, Pages: 299 – 302
S. Zhang; J. Cao, R. Mcmorrow; “E-PHEMT, Single, High Efficienct Power amplifiers for GSM and DCS Application”, Microwave Symposium Digest, 2002 IEEE MTT-S International, Pages: 927 – 930
B. Nelson; S. Cripps, J. S. Kenney; F. Podell “A High Efficiency Single- Supply RFIC PHS Linear Amplifier with Low Adjacent Channel Power Leakage”, Microwave Symposium Digest, 1996 IEEE MTT-S International, Pages: 49 – 52
T. Yoshimasu, N. Tanba, S. Hara “High-Efficiency HBT MMIC Linear Power Amplifier for L-Band Personal”, IEEE Microwave and Guided Wave Letters, V4, No3, March 1994, pp 65 – 67
N. Schlumpf, M. declercq, C. Dehollain “A Fast Modulator for Dynamic Supply Linear RF Power Amplifier”, IEEE Journal of Solid-State Circuits, V39, No7, July 2004, pp 1015 – 1025
T. Yoshimasu, N. Tanba, S. Hara “An HBT MMIC Linear Power Amplifier for 1.9 GHz Personal Communications”, Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994, Pages: 59 – 62
Ian Hickman,譯 徐瑞明,“RF射頻技術實務”,旗標出版股份有限公司,2004年7月
黃志偉,“射頻功率放大器電路設計”, 西安電子科技大學出版社,2009年
游金湖,“電晶體與IC電路”,文笙書局,1981年11月
李威儂, GaAs pHEMT射頻切換開關的特性分析,義守大學 碩士論文Miyatbuji, K.; Ueda, D.,“A GaAs High Power RF Single Pole Dual Throw Switch IC for Digital Mobile Communication System,”IEEE Jounal of Solid Circuits .Vol 30.NO 9.September 1995
Robert Anholt, “ Electrical and Thermal Characterization of MESFETs, HEMTs, and HBTs”.
R.Dingle, H. L. Stormer, A. c. Gossard and W. Wiegmann:“Electron mobility in modulation-doped semiconductor heterojunction superlattices,”App1. Phys., Lett., vol.33, p.665, 1978
S.M. Sze,“High-Speed Semiconductor Devices”,John Wiley,1990
William Clausen, “Small and Large Signal Modeling of MM-Wave MHEMT Devices”,A thesis submitted to University of South Florida,2003.
張哲嘉,“假晶高電子遷移率電晶體之等效電路模型”國立雲林科技大學,2007年
曹恆偉、林浩雄、郭建宏、陳建中,“微電子電路(上)”,台北圖書有限公司,2004年9月
J. Micheal Golio “microwave MESFETs & HEMTs” Artech House, Inc. 1991.
黃冠凱,“砷化鋁鎵/砷化銦鎵/砷化鎵 假性高電子遷移率電晶體模型參數萃取與建立”,國立成功大學,2006年
Gu, Z. Johnson, D. Belletete, S. Frykund, D. Skyworks Solutions, Inc. “A 2.3 V PHEMT power SP3T antenna switch IC for GSM handsets”, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE.
Sanusi, R. Ismail, M.A. Norhapizin, K. Rahim, A. Marzuki, A. Yahya, “15 GHz SPDT Switch Design using 0.15 _m GaAs Technology for Microwave Applications”,2008 International Conference on Electronic Design.
匡仲元,“異質接面雙極性電晶體大訊號模型建立與射頻功率放大器電路設計及封裝”,國立中央大學,2004
陳建勳, 應用於手機功率放大器之控制器設計,義守大學 碩士論文Behzad Razavi,Design of analog CMOS Integrated Circuit,McGraw Hill,2002
Phillip E. Allen,Douglas R. Holberg,Cmos Analog Circuit Design,Oxford,2002
Adel S. Sedra,Kenneth C. Smith Microelectronic Circuits 5th, Oxford,2004
Donald A. Neamen, Microelectronic: Circuit Analysis And Design 3th, McGraw Hill
E. Sa ̈ckinger and W. Guggenbu ̈hl, "A versatile building block: The CMOS differential difference amplifier," IEEE J. Solid-State Circuit. vol. SC-22, pp. 287-294, Apr. 1987
Bob Wolbert, "Designing With Low-Dropout Voltage Regulators," Micrel Semiconductor, December 1998
Charles H. Roth,Jr., Fundamentals of Logic Design 5th,Thomson Brooks/Cole,2004
David K. Cheng, Field and Wave Electromagnetics,Addison Wesley,1989
蕭培墉、吳孟賢,“HSpice 積體電路設計分析與模擬導論”,台灣東華書局股份有限公司,2007年6月
Chenyuan Zhao,JunKai Hua, “A new high performance bandgap reference”,ICECC,pp.64-66,Sept.2011
D. Hilbiber,“A New Semiconductor Voltage Standard”,ISSCC Dig.of Tech.Papers,pp.32-33,Feb.1964
Edward K.F.Lee,“Low Voltage CMOS Bandgap Reference with Temperrature Compensated Reference Current Output”,ISCAS,pp.1643-1646,May 30 2010-june 2 2010
Tom Kugelstadt,“fundamental Theory of PMOS LOW-Dropout Voltage Regulato”,Application Reports,Texas Instruments Inc.,literature number SLVA068,April 1999
Bang S. Lee,“Technical Review of Low Dropout Voltage Regulato Operration and Perfomance”,Application Reports,TexasInstruments Inc.,literature number SLVA072, Aug. 1999
Bang S. Lee,“Understanding the Terms and definitions of LDO Voltage Regulators”Application Reports.Texas Instruments Inc.,literature number SLVA079,Oct 1999
徐研訓,“低工作電流類比積體電路”,國立交通大學,2002年6月
李民慶、王清松、李明達、曾世宏、林章偉、林重佑,低壓降線性穩壓器分析與設計,亞東學報,第27期,頁77~86,2007年6月Seyed R. Zarababi,Frode Larsen,and Mohammed Ismail,“A Reconfigurable Op-Amp/DDA CMOS Amplifier Architecture”,IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS-I: ANALOG AND DIGITAL SIGNAL PROCESSING,vol.39,6,June 1992
Shu-Chuan Huang,Mohammed Ismail,Seyed R.Zarabad,“A Wide Range Differential Difference Amplifier: A Basic Block for Analog Signal Processing in MOS Technology”,IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS-II I: ANALOG AND DIGITAL SIGNAL PROCESSING,vol.40,no.5,May 1993
Zdzislaw Czarnul, Tetsuya Iida, Kazuhiro Tsuji and Naoyuki Hamanishi,“A Highly Linear Low voltage and Multiple Weighted Input Differential Difference Amplifier Design”,Solid-State Circuits Conference,ESSCIRC’95,pp.318-321,1995
Soliman A. Mahmoud and Ahmed M. Soliman,“A New CMOS Realization of The Differential Difference Amplifier and Its Application to A MOS-C Oscillator”,INT. J. ELECTRONICS,vol.83,no.4,455-465,1997