臺灣博碩士論文加值系統

本論文探討不同表面披覆厚度之矽基板上共平面波導結構的傳輸特性與串音現象，量測與分析其相關特性，及研究表面披覆高阻值矽基板上電感的特性。
由於矽基板表面與氧化層間會存在一層反轉層，是因為氧化層的正電荷吸引少數載子到基板表面形成通道，射頻微波信號會經由此通道傳輸造成信號衰減，使得射頻微波元件整體損失增加。因此，如何抑制通道形成就顯得重要了。
在表面披覆研究中，披覆層材料為非晶矽或多晶矽。主要沉積不同厚度的非晶矽或多晶矽及氧化層於低阻值矽基板上，量測並比較此基板上之共平面波導傳輸線的傳輸損失。由實驗結果證實，當整體厚度提升後確實能有效降低基板造成的傳輸損失。
因為低阻值矽基板本身的損耗性質，造成被動元件在高頻操作時，會產生相當高的信號損失，使得元件特性不穩定。因此，我們也利用高阻值基板良好的低損特性，將電感元件製作在已有表面批覆處理的高阻值矽基板上，其量測也確實得到較高的電感值與品質因數。

In this thesis, the transmission characteristics and crosstalk phenomena of coplanar waveguide structures on silicon substrates with a surface passivation layer of different thickness were studied. Related characteristics were measured and analyzed, moreover, characteristics of inductor on a surface-passivated high-resistivity silicon substrate was also studied.
There exists a inversion layer between the silicon substrate and the oxide layer because positive charges in the oxide attract minority carriers to the substrate surface to form a carrier channel. Radio-frequency (RF) and microwave signals can transport through the channel and hence are attenuated. This will result in the increase of overall loss in a RF and microwave component. Therefore, how to suppress the formation of the channel is an important topic.
In the study of surface passivation, amorphous silicon or polysilicon was used as a material for surface passivation. Amorphous silicon or polysilicon and oxide of different thickness were deposited on a low-resistivity silicon substrate. The transmission loss of coplanar waveguide transmission lines on these substrates was measured and compared. The experimental results show that transmission loss caused by substrate can be effectively decreased with the increase of total thickness of surface-passivation layer and oxide.
Because of the native lossy property of low-resistivity silicon substrate, passive components have very high signal loss when operated at high frequencies, and hence device characteristic are unstable. Therefore, we have also fabricated inductors on surface-passivaton high-resistivity silicon substrates, which have the excellent nature of low loss. The measurement results show the inductors have higher inductance and higher quality factor.

目錄
中文摘要.................................................. I
英文摘要................................................ III
目錄.....................................................V
表目錄.................................................VIII
圖目錄..................................................IX
第一章 緒論...............................................1
1-1研究背景...........................................1
1-2研究動機與目的.....................................1
1-3論文架構...........................................2
第二章 理論基礎...........................................3
2-1傳輸線理論簡介..................................... 3
2-1-1共平面波導理論................................4
2-2傳輸線衰減機制.....................................7
2-2-1介電質損失....................................7
2-2-2導體損失......................................8
2-2-3輻射損失......................................8
2-3高阻值微波矽基板................................10
2-4矽基板損失.....................................11
2-5改善矽基板損失方法..............................13
2-6共平面波導傳輸線設計.............................14
2-6-1串音結構設計..................................14
2-7特徵參數萃取....................................16
2-7-1特徵阻抗與有效介電常數......................16
2-7-2萃取等效電阻係數............................16
2-7-3共平面波導傳輸線R L G C參數...........17
2-7-4 萃取電感求法..............................19
第三章 實驗方法及步驟....................................22
3-1實驗方法........................................22
3-2 實驗步驟................................... 24
3-2-1晶圓清洗..................................24
3-2-2氧化製程..................................25
3-2-3微影製程..................................25
3-2-4 Lift off製程.............................26
3-3感應耦合電漿化學氣相沉積..........................29
3-4量測...........................................30
第四章 結果與討論........................................31
4-1表面披覆厚度效應.............................31
4-2串音結構特性...................................43
4-3表面披覆高阻值矽基板上電感特性.................49
第五章 結論..............................................52
參考文獻.................................................53

表目錄
表3-1 共平面波導傳輸線三種結構參數........................22
表3-2 不同披覆層與氧化層厚度之矽板........................23
表4-1 沒氧化層與披覆層的共平面波導傳輸線三種結構參數與傳輸線
損失...................................32
表4-2 具有100nm披覆層之矽基板上不同氧化層厚度參數........35
表4-3 具有400nm披覆層之矽基板上不同氧化層厚度參數........36
表4-4 具有相同總厚度之矽基板上不同披覆層厚度參數..........38
表4-5 具有900nm氧化層之矽基板上有披覆層與沒有披覆層厚度參數
....................................................40

 
圖目錄
圖2-1 集總元件等效電.......................................4
圖2-2 常見共平面結構 (a)共平面波導 (b)共平面帶線 (c)槽線.....5
圖2-3 共平面波導波導結構 (a)剖面圖(b)電場、磁場分佈圖........6
圖2-4 介電常數的極化機制...................................8
圖2-5 未加偏壓CPW-MOS結構 (a)P型基板( b)N型基板........12
圖2-6 共平面波導結構示意圖(a)只沉積氧化層；(b)沉積氧化層與披覆
層............................................13
圖2-6 沉積披覆層於矽基板之共平面波導結構..................12
圖2-7 表面披覆共平面波導結構..............................15
圖2-8 串音結構............................................15
圖2-9 共平面波導結構(a)矽基板上覆蓋披覆層與氧化層等效電路；
(b)具等效電阻係數簡化後的等效電路..................18
圖2-10 共平面波導線結構(R,L,C,G)等效電路.................. 19
圖2-11 DUT結構與測試結構(a)DUT結構(八角形電感)；(b)-(d)開路,
短路,貫穿測試結構.................................21
圖2-12 對稱單圈電感等效電路...............................21
圖3-1 物理金屬濺鍍(sputter) ............................27
圖3-2 電漿輔助式化學氣相沈積(PECVD)......................27
圖3-3 光罩對準曝光機......................................28
圖3-4 曝光顯影、Lift off示意圖..............................28
圖3-5 感應耦合電漿化學氣相沉積............................29
圖4-1 沒有氧化層與披覆層的矽基板結構之剖面圖..............32
圖4-2 共平面波導傳輸線量測照相圖..........................33
圖4-3 沒氧化層與披覆層之矽基板上傳輸線傳輸損耗與頻率量測關係
圖.............................................33
圖4-4 有氧化層與披覆層的矽基板結構之剖面圖................35
圖4-5 對不同氧化層厚度之矽基板上傳輸線傳輸損耗與頻率量測關係
圖..................................................36
圖4-6 對不同氧化層厚度之矽基板上傳輸線傳輸損耗與頻率量測關係
圖..................................................37
圖4-7 相同總厚度不同披覆層厚度之矽基板上傳輸線傳輸損耗與頻率關係
圖..............................................38
圖4-8 有披覆層與沒有披覆層之矽基板上傳輸線傳輸損耗與頻率關係
圖..................................................40
圖4-9 高阻值矽基板上傳輸線傳輸損耗與頻率關係圖............41
圖4-10 施加直流偏壓之傳輸線傳輸損耗與頻率關係圖...........42
圖4-11 簡易集總元件等效電路...............................44
圖4-12 串音量測照相圖.....................................44
圖4-13 比較有無披覆層的串音現象...........................45
圖4-14 主導串音現象主要元件等效電路.......................47
圖4-15 主導串音元件橫向耦合電容電路.......................48
圖4-16 單圈八角形螺旋電感量測照相圖.......................50
圖4-17 有表面披覆層單圈八角形螺旋電感.....................51

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