臺灣博碩士論文加值系統

無線感測網路（Wireless Sensor Network, WSN）是由許多分佈在空間中的感測裝置所組成的一種無線通訊網路，由於需持續供電給感測節點，因此採取能量蒐集的方式直接從環境中提取能量是一種解決無線感測網路供電的重要方法。本研究利用電荷幫浦(Charge Pump, CP)實現整流器可達到整流及升壓的效果;除了討論在傳統的電荷幫浦應用於能量蒐集系統時會發生的問題，如死區及電壓衰減;也分析使用一般臨界電壓(Normal-Vth)、低臨界電壓(Low-Vth)及零臨界電壓(Zero-Vth)電晶體對設計電荷幫浦之差異;並採用補償的方式解決且在補償電壓與漏電流間取得平衡。最後我們提出一個新的被動式整流器NRT5S5用於射頻能量蒐集應用，使用TSMC 0.18μm CMOS 1P6M 1.8 &; 3.3V 製程及900MHz的射頻(Radio Frequency, RF)信號頻率，經由晶片實際測量結果在入射功率為-12dBm時，具有轉換效率高達31.73％和2.002V的輸出電壓，實驗結果證明我們的設計是有效的。

Wireless Sensor Network (WSN) is composed of many distributed sensors with requirement of self-powering through the use of energy harvesting techniques. In this thesis, charge pump is used to design rectifier for radio frequency (RF) energy harvesting. Both the voltage attenuation and dead zone problems will be discussed that are occurred when traditional charge pump used in RF energy harvesting systems. The differences of the charge pump design individually based on Normal-Vth, Low-Vth and Zero-Vth transistors are analyzed. A compensation approach is proposed to solve these problems and to balance between the compensation voltage and leakage current. By using this approach, a new rectifier denoted as NRT5S5 is proposed for radio frequency (RF) energy harvesting applications. Based on TSMC 0.18μm CMOS 1P6M 1.8 &; 3.3V process and RF input signal frequency at 900MHz, the NRT5S5 rectifier has conversion efficiency up to 31.73% and the output voltage of 2.002V, both with the condition of input power to be -12dBm. The experiments show that our design is valid and work.

摘要 I
ABSTRACT II
誌 謝 III
目錄 IV
圖目錄 VII
表目錄 X
第一章 緒論 1
1.1研究背景 1
1.2研究動機 2
1.3論文大綱 4
第二章 文獻回顧 6
2.1電荷幫浦之探討 6
2.1.1基本操作原理 6
2.1.2柯克羅夫特 - 沃爾頓(Cockcroft-Walton) 倍壓器 7
2.1.3 Dickson電荷幫浦 8
2.1.4靜態電荷傳輸開關式(SCTS)電荷幫浦 10
2.1.5動態電荷傳輸開關式(DCTS)電荷幫浦 11
2.1.6使用浮動阱結構之電荷幫浦 13
2.1.7交越耦合型電荷幫浦 14
2.2臨界電壓補償 16
2.3 依靠製程的解決方案 18
2.3.1低臨界電壓元件 18
2.3.2分析使用不同Vth電晶體元件對電荷幫浦之差異 21
2.4 臨界電壓補償電路 23
2.4.1臨界電壓補償概念 24
2.4.2外部補償式整流器設計(ECR) 26
2.4.3內部補償式整流器設計(ICR) 27
2.4.4浮動閘極式整流器設計(FGR) 28
第三章 應用於射頻能量蒐集之整流器設計 30
3.1臨界電壓補償電路 30
3.2 NRT5S5整流器 32
第四章 晶片佈局後端模擬結果與晶片量測 37
4.1晶片佈局 37
4.2後端模擬結果 39
4.3 晶片量測 44
4.3.1晶片微影圖與測量環境 44
4.3.2 PCB測量板的實現 46
4.3.3測量結果 48
第五章 結論與未來研究方向 50
5.1結論 50
5.2未來研究方向 50
參考文獻 51

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