臺灣博碩士論文加值系統

高溫超導體(Tc>77K)的出現，使超導體在應用上的可能性大為提升。為了讓超導體的應用更廣泛，結合已經成熟之半導體技術，應為可行之方法。因此我們計劃直接在矽晶表面成長超導體薄膜，增廣應用性。從晶格分析我們知道超導體Y1Ba2Cu3O7-δ(YBCO)一個單位晶格中(001)面之對角線長度與Si單晶之晶格常數極為匹配(1.23%)，但是如果直接在Si表面成長YBCO超導薄膜，成長的高溫會導致YBCO中的Ba與Si反應形成Ba-Si-O化合物，阻礙YBCO的形成，因此必須在YBCO薄膜與Si基板中成長一層緩衝層，本計劃擬以RF-Sputter成長YSZ緩衝層，以阻隔Ba與Si反應。
由於濺鍍YSZ時，電漿中的氧離子帶負電，易因電場之驅使往Si基板移動，和Si反應形成SiO2層使YSZ不易形成磊晶薄膜。故本計劃擬以低溫(700℃)成長YSZ，使Si謹在薄膜成長之初形成極薄的SiO2待YSZ成長後，因低溫YSZ不傳進氧氣故可以阻絕更多氧移往Si表面形成更厚且連續的SiO2。本研究即變化不同成長距離、氧壓、分壓及溫度等因素，試圖找到最佳成長條件。至目前為止已成長出較純的YSZ膜，唯薄膜方向的控致上，變因較複雜，有待後續的研究。

High temperature superconductor have been discovered. In order to make the application of superconductor to be more widespread, we combine the technique of semi-conductor. We deposited superconductor thin films on silicon surface and expected it has good application. Because the lattice matches the(001) orientation of YBa2Cu3O7~5 and silicon, it is possible to choose silicon as substrate. But Ba and Si attend to interact as chemical compound, Ba-Si-O. So it can't becomed normal superconductor structure. This disadvantage will be overcome by growing a buffer-layer between silicon substrate and YBCO crystal. We use the RF-sputter to deposit the buffer layer.
When we grow YSZ by use of RF-sputter, O2 moves to silicon wafer in the electric field , and silicon interacts with O2 to form the chemical compound, SiO2. YSZ it's difficult to epi-deposit.
We try to deposit the YSZ at 700℃, because YSZ will not deliver O2 to silicon at low temperate. We change the distance between the e-gun and heater、oxygen pressure、the ratio of O2 pressure to Ar pressure、and deposition temperature.
From now on, we have deposited the more pure film of YSZ, however we still could not control the orientation of deposition very well, because there are more complex variables in it, which keeps us on researching in this field.

第一章 前言…………………………………………………… 1
第二章 回顧…………………………………………………… 3
第三章 原理…………………………………………………… 8
第一節 晶格分析………………………………………8
第二節 濺鍍原理…………………………………….12
第三節 X-RAY……………………………………….18
第四節 SEM………………………………………….20
第五節 EDS…………………………………………..23
第四章 實驗步驟……………………………………………....24
第一節 薄膜製程濺鍍系統(Deposition System)……25
第二節 Heater製作…………………………….……28
第三節 YSZ薄膜製程………………………….……33
第五章 結果分析與討論……………………………….….….43
第六章 結論…………………………………………….……..64
參考資料……………………………………………………….....66

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