臺灣博碩士論文加值系統

本研究利用化學氣相沉積法(TCVD, Thermal Chemical Vapor Deposition)成長奈米碳螺旋線圈及奈米碳管，並以場發射掃描式電子顯微鏡、高解析度穿透式電子顯微鏡、化學分析光電子分光儀、拉曼光譜分析儀、真空場發射量測儀等儀器對其進行分析，進而針對兩者之製程參數及結構形態進行探討。
針對奈米碳螺旋線圈製程之研究，本研究證實藉由降低「非均溫縫隙化學析鍍法」中鍍液之pH酸鹼值，以提升Ni-P合金觸媒中P含量，可成長出不同螺旋形態（麻花或彈簧形態）之奈米碳螺旋線圈。此外，並發現利用「化學均溫置換法」單獨置換Pd金屬觸媒，亦可大量成長螺旋形態均勻之奈米碳螺旋線圈，其線圈外徑約108.4 nm，纖維內徑約95.5 nm，結構形態屬於實心螺旋結構之碳纖維，成長模式為二維方向螺旋成長模式。
在奈米碳管製程方面，本研究以MgO基材蒸鍍Ni觸媒10 nm於TCVD系統成長奈米碳管，經實驗發現，製程溫度800 ℃，C2H2/H2流量比例10/40，通氫前處理時間30 min，為大面積成長高準直性奈米碳管之最佳製程條件，其碳管垂直成長高度可達24.8±2.2 μm，並由HR-TEM觀察得知，碳管具有明顯之中空管狀結構，而管壁為石墨層平行排列結構，層數約8~12層。此外，奈米碳管亦有良好之場發射效應，所獲得之開啟電場為3.1 V/μm。

The synthesis of carbon nanocoils (CNCs) and carbon nanotubes (CNTs) using thermal chemical vapor deposition (TCVD) and C2H2/H2 as gas sources is studied in this thesis. The morphology and emission properties of both carbonaceous nano-products were observed and characterized using Field-Emission Scanning Electron Microscope (FESEM), High-Resolution Transmission Electron Microscope (HRTEM), Electron Spectroscopy for Chemical Analysis, Raman Spectroscopy, and I-V curve measurements.
The results indicate that, for the growth of carbon nanocoils (CNCs), the content of phosphorus in Ni-P alloy catalysts increased when the pH value of the plating solution decreased, and we can control the coil morphology (twist-shaped or spring-like) of grown CNCs by adjusting the pH value of the plating solution. Moreover, we also found that CNCs with uniform single-helix structure can be synthesized in large scale by TCVD using galvanic displacement deposited Pd particles as catalysts. These CNCs have a twisting shape and were composed of coiled carbon nanofibers. The mean coil diameter was around 108.4 nm and the mean fiber diameter was around 95.5 nm, Their growth belonged to 2-directional helical growth.
For the growth of carbon nanotubes (CNTs), multi-wall CNTs (MCNTs) were grown on MgO substrates by TCVD process using an evaporated Ni layer (10 nm) as a catalyst. The result shows that, at the growth temperature of 800 ˚C , C2H2/H2 ratio of 10/40 (sccm) and pre-annealed under H2 ambience for 30 minutes, we can grow well-aligned MCNTs in large scale. The length of 24.8±2.2 μm of these MCNTs was achieved. HRTEM observation revealed that these MCNTs have a tubular structure whose tube-wall was composed of 8 to 12 layers of parallel graphene. Besides, The I-V curve measurement showed that they have good field emission property with a turn-on voltage (for a current density of 0.01mA) of 3.1 V/μm.

誌謝
摘要
ABSTRACT
目錄
表目錄
圖目錄
符號說明
1. 緒論
1.1 前言
1.2 研究動機與目的
2. 文獻回顧及發展簡介
2.1 奈米碳管簡介
2.1.1 奈米碳管的結構
2.1.2奈米碳管的成長機制
2.2 奈米碳管的特殊性質及應用
2.2.1 機械特性
2.2.2 電性
2.2.3 熱穩定性、熱導性及熱膨脹性
2.2.4 場發射特性
2.2.5 應用前景
2.3 奈米碳管製備方法
2.3.1 電弧放電法(Arc Discharged Method)
2.3.2 雷射蒸發法(Laser Vaporization Method)
2.3.3化學氣相沉積法(Chemical Vapor Deposition)
2.4 氧化鎂基材對成長奈米碳管之作用
2.5 奈米碳螺旋線圈發展簡介
2.6 奈米碳螺旋線圈製備方法
2.6.1 基體法
2.6.2 噴淋法
2.6.3 流動催化法
2.7 奈米碳螺旋線圈的成長機制與應用
2.7.1 奈米碳螺旋線圈的成長機制
2.7.2應用前景
2.8觸媒製備方法
2.8.1 物理法
2.8.2 化學法
3. 研究方法與設備
3.1 研究流程
3.2 研究方法
3.2.1 基板製備
3.2.2 觸媒製備
3.2.3 化學氣相沉積法合成奈米碳螺旋線圈及奈米碳管
3.3 研究設備
3.3.1 非均溫縫隙化學析鍍裝置
3.3.2 化學均溫置換裝置
3.3.3 蒸鍍設備
3.3.4 化學氣相沉積設備
3.3.5 檢測分析儀器
4. 結果與討論
4.1以化學氣相沉積法成長奈米碳螺旋線圈
4.1.1觸媒對於奈米碳螺旋線圈成長之影響
4.1.1.1不同pH酸鹼值之Ni-P合金觸媒對於奈米碳螺旋線圈成長之影響
4.1.1.2 Ni-P/Pd共觸媒對於奈米碳螺旋線圈成長之影響
4.1.1.3置換Pd金屬觸媒對於奈米碳螺旋線圈成長之影響
4.1.2通氫前處理時間對於奈米碳螺旋線圈成長之影響
4.1.3製程溫度對於奈米碳螺旋線圈成長之影響
4.1.4奈米碳螺旋線圈微觀與結構之分析
4.1.5小結
4.2以單晶氧化鎂材料蒸鍍鎳觸媒成長高品質奈米碳管
4.2.1製程溫度對於奈米碳管成長之影響
4.2.2不同氣體流量比例對於奈米碳管成長之影響
4.2.3通氫前處理時間對於奈米碳管成長之影響
4.2.4奈米碳管之微觀結構及場發射效能分析
4.2.5小結
5. 結論
參考文獻
自傳

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