臺灣博碩士論文加值系統

本文的實驗是研究矽離子佈值於鎂摻雜p 型氮化鎵的特性研
究，以40keV 、70keV 、150keV 等不同能量及5×10 16 ，5×10 17 ，5×10 18 ，
1×10 20 cm -3 等不同佈植濃度，佈植在濃度為3.4 ×10 17 cm -3 之鎂摻雜p
型氮化鎵上，藉以了解矽離子佈植後的氮化鎵試片特性。
在光特性方面，利用拉曼 (Raman) 量測顯示，佈植造成的缺陷
在熱處理過程中會有相互聚集的現象，然後才是缺陷的消除；利用光
激發螢光光譜(photoluminescence)的量測顯示，矽離子佈植會將原本p
型氮化鎵的藍光發光機制(2.8eV)減弱，而產生黃光放射的發光機制。
在電性方面，由霍爾量測顯示，佈植入的矽離子濃度一旦大於p
型氮化鎵的電洞濃度，便可將試片轉變為n 型的氮化鎵，而且由於佈
植所留下來的傷害影響，電子遷移率會有大幅降低的現象；然後再以
蕭特基二極體做深層能階暫態(deep-level transient spectroscopy)量
測，顯示材料中之原生缺陷(native defect)的變化，所以在高濃度佈植
後轉變為n 型氮化鎵，鎵空缺(gallium vacancy)的缺陷能階因為形成
能降低而增加，說明了材料中補償效用的影響機制。

p-type GaN can be converted to n-type by
Si + ion implantation. We used AFM, XRD, PL, Raman
scattering, Hall, and DLTS measurement to investigate the mechanism of this conversion.

目錄
第一章 序論........................................................................................1
1.1 背景及研究動機......................................................................1
1.2 實驗目的.................................................................................2
第二章 量測系統及原理簡述..............................................................4
2.1 離子佈植簡述：......................................................................4
2.2 量測系統及原理概述...............................................................5
2.2.1 光激發光譜.....................................................................5
2.2.1.1 光激發螢光法..............................................................5
2.2.1.2 光激發螢光量測原理...................................................6
2.2.1.3 光子在能帶間之躍遷型式: ..........................................7
2.2.1.4 能隙隨溫度及摻雜濃度影響之變化: ...........................8
2.2.2 拉曼光譜量測.................................................................9
2.2.2.1 拉曼光譜.....................................................................9
2.2.2.2 拉曼光譜原理:...........................................................10
2.2.2.3 大角度入射的拉曼光譜測定方法............................. 11
2.2.3 霍爾效應量測..............................................................12
2.2.3.1 霍爾效應量測法........................................................12
2.2.3.2 霍爾效應量測原理....................................................12
2.2.4 深層能階暫態能譜......................................................14
2.2.4.1 DLTS 量測法.............................................................14
2.2.4.2 DLTS 基本原理..........................................................14
2.2.4.3 缺陷活化能、缺陷濃度及載子截面積的測定..........17
第三章 實驗方法及量測步驟............................................................20
3.1 實驗準備...............................................................................20
試片準備...............................................................................20
3.2 實驗步驟...............................................................................20
3.3 霍爾效應量測元件製作........................................................22
3.4 氮化鎵蕭特基二極體製作....................................................23
製程......................................................................................23
第四章 結果與討論...........................................................................26
前言.............................................................................................26
4.1 拉曼光譜討論與分析.............................................................26
4.1.1 拉曼光譜.....................................................................26
4.1.2 氮化鎵薄膜與拉曼光譜...............................................27
4.1.3 拉曼光譜與離子佈值...................................................28
4.1.4 拉曼光譜與熱處理的修復過程.....................................29
4.2 PL 討論與分析......................................................................31
4.2.1 p 型氮化鎵薄膜與PL 光譜...........................................32
4.2.2 氮化鎵的PL 光譜中之黃光放射.................................34
4.2.3 離子佈植後的PL 光譜................................................35
4.3 霍爾效應量測之討論與分析..................................................37
4.3.1 變溫霍爾量測與活化能...............................................38
4.3.2 載子轉換和濃度變化的分析.......................................39
4.3.2 遷移率變化的分析.......................................................39
4.4 DLTS 討論與分析..................................................................40
4.4.1 氮化鎵之缺陷能階......................................................40
4.4.2 離子佈植之缺陷能階分析...........................................43
第五章 結論......................................................................................45
參考文獻.....................................................................................48

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